Zobrazeno 1 - 10
of 47
pro vyhledávání: '"RAMAKRISHNA VETURY"'
Autor:
Bradley D. Christiansen, Eric R. Heller, Ronald A. Coutu, Ramakrishna Vetury, Jeffrey B. Shealy
Publikováno v:
Active and Passive Electronic Components, Vol 2012 (2012)
Reports to date of GaN HEMTs subjected to forward gate bias stress include varied extents of degradation. We report an extremely robust GaN HEMT technology that survived—contrary to conventional wisdom—high forward gate bias (+6 V) and current (>
Externí odkaz:
https://doaj.org/article/1fff87dd96524908a41d169f824bda5b
Autor:
Ramakrishna Vetury, Houlden Rohan W, Mary Winters, Daeho Kim, Frank Bi, David M. Aichele, Jeffrey B. Shealy
Publikováno v:
2021 IEEE International Ultrasonics Symposium (IUS).
Wi-Fi 6/6E uses 160 MHz channels in UNII-5/6/7/8 bands in 5-7GHz spectrum for maximizing data rates. A critical challenge for Wi-Fi 6E RF filters is low insertion loss in the 160MHz UNII-5 transmit band while adequately rejecting UNII bands 1, 2C, 3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7dc3247a99ec4c6bc13fad0b42db2858
https://doi.org/10.1109/ius52206.2021.9593678
https://doi.org/10.1109/ius52206.2021.9593678
Autor:
Ramakrishna Vetury, Roy H. Olsson, Jeffrey B. Shealy, Craig Moe, Michael D'Agati, Pinal Patel, Zichen Tang, Mary Winters
Publikováno v:
2020 IEEE International Ultrasonics Symposium (IUS).
The authors report 3.5 GHz bulk acoustic wave resonators with an observed k 2 eff in the range of 14.2 to 16%, which the authors believe to be amongst the highest reported for a Sc mole fraction of 28%. The measured Qp is as high as 951 at 3.5 GHz, w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be41f548c4e4fdb6a8be6111ddcb351c
https://doi.org/10.1109/ius46767.2020.9251412
https://doi.org/10.1109/ius46767.2020.9251412
Publikováno v:
2020 IEEE International Ultrasonics Symposium (IUS).
Previous 4G/LTE applications for RF BAW filters were predominately focused on relatively low power, sub-3 GHz filters for wireless applications. Emerging 5G infrastructure applications bring new requirements for high-power, high-frequency micro RF fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8a4b9ccf3bc5c98d5bf3e0f0dff26b1
https://doi.org/10.1109/ius46767.2020.9251387
https://doi.org/10.1109/ius46767.2020.9251387
Autor:
Samuel Graham, Georges Pavlidis, Spyridon Pavlidis, Eric R. Heller, Ramakrishna Vetury, Elizabeth A. Moore
Publikováno v:
IEEE Transactions on Electron Devices. 64:78-83
In this paper, gate resistance thermometry (GRT) was used to determine the channel temperature of AlGaN/GaN high electron-mobility transistors. Raman thermometry has been used to verify GRT by comparing the channel temperatures measured by both techn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2852de008bd8f8b37982380e155bb182
https://doi.org/10.1109/ted.2016.2625264
https://doi.org/10.1109/ted.2016.2625264
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
5.66 GHz bulk acoustic wave filters, utilizing doped aluminum nitride (AlN), are reported. The filters exhibit high -3 dB bandwidth of 452 MHz (8% fractional bandwidth), a minimum insertion loss of 1.79 dB, rejection greater than 50 dB and power hand
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9e57c056e4d98067da2dba5cca3bf36
https://doi.org/10.1109/iedm19573.2019.8993455
https://doi.org/10.1109/iedm19573.2019.8993455
Publikováno v:
2018 IEEE International Ultrasonics Symposium (IUS).
The authors report a Bulk Acoustic Wave (BAW) filter technology built using a 6-inch MEMS wafer process on a Si substrate, compatible with single crystal and polycrystalline aluminum nitride (AIN) piezoelectric materials (denoted as XBAW), and presen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76faa6e378fcec7ec568f291d45ff265
https://doi.org/10.1109/ultsym.2018.8580045
https://doi.org/10.1109/ultsym.2018.8580045
Autor:
Kim Dae Ho, Ya Shen, David M. Aichele, Ramakrishna Vetury, Mary Winters, Joe Jech, Shawn R. Gibb, Michael A. McLain, Michael D. Hodge, Ken Fallon, Jeffrey B. Shealy, Houlden Rohan W, Pinal Patel
Publikováno v:
2017 IEEE International Electron Devices Meeting (IEDM).
5.24GHz bulk acoustic wave filters, utilizing undoped single crystal aluminum nitride, are reported. The filters had an absolute 4dB bandwidth of 151 MHz, a minimum insertion loss of 2.82 dB and rejection >38 dB. Resonators show k2 eff of 6.32%, Q rn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec859e42e99caac32cf3db1d71d32c41
https://doi.org/10.1109/iedm.2017.8268460
https://doi.org/10.1109/iedm.2017.8268460
Autor:
Pinal Patel, Ramakrishna Vetury, Rohan Holden, Michael A. McLain, Shawn R. Gibb, Mark D. Boomgarden, Brook Hosse, Jeffrey B. Shealy, Alexander Y. Feldman, Michael P. Lewis, Michael D. Hodge
Publikováno v:
2017 IEEE MTT-S International Microwave Symposium (IMS).
Bulk acoustic wave (BAW) filters operating at center frequency of 3.7GHz, comprising of BAW resonators utilizing single crystal aluminum nitride (AlN) piezoelectric films epitaxially grown on silicon carbide (SiC) substrates, are reported. Metal-orga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a9bef45c9d6fe645b3b603a70a1d2dd
https://doi.org/10.1109/mwsym.2017.8058901
https://doi.org/10.1109/mwsym.2017.8058901
Publikováno v:
IEEE Transactions on Electron Devices. 61:3145-3151
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff615fa21086c2dbb29b08511c63b9dd
https://doi.org/10.1109/ted.2014.2336248
https://doi.org/10.1109/ted.2014.2336248