Zobrazeno 1 - 7
of 7
pro vyhledávání: '"RAI, RAGHAW S."'
Publikováno v:
In Progress in Crystal Growth and Characterization of Materials 2009 55(3):63-97
Theoretical and Experimental Investigation of Thermal Stability of HfO2 /Si and HfO2 /SiO2 Interfaces.
Publikováno v:
MRS Online Proceedings Library; 2002, Vol. 731 Issue 1, p1-4, 4p
Thermodynamic Stability of High-K Dielectric Metal Oxides ZrO2 and HfO2 in Contact with Si and SiO2.
Autor:
Gutowski, Maciej, Jaffe, John E., Liu, Chun-Li, Stoker, Matt, Hegde, Rama I., Rai, Raghaw S., Tobin, Philip J.
Publikováno v:
MRS Online Proceedings Library; 2002, Vol. 716 Issue 1, p1-5, 5p
Publikováno v:
Journal of the American Ceramic Society; 1990, Vol. 73 Issue 3, p615-620, 6p
Publikováno v:
Journal of the American Ceramic Society; 1988, Vol. 71 Issue 4, p236-244, 9p
Autor:
Gutowski, Maciej, Jaffe, John E., Liu, Chun-Li, Stoker, Matt, Hegde, Rama I., Rai, Raghaw S., Tobin, Philip J.
Publikováno v:
Applied Physics Letters; 3/18/2002, Vol. 80 Issue 11, p1897, 3p, 1 Diagram, 1 Chart, 1 Graph
Autor:
Schraub, David M., Rai, Raghaw S.
Publikováno v:
In Progress in Crystal Growth and Characterization of Materials 1998 36(1):99-122