Zobrazeno 1 - 10
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pro vyhledávání: '"RADANTSEV, V. F."'
Autor:
Radantsev, V. F., Zavyalov, V. V.
Due to large difference in effective masses of light and heavy holes it is usually supposed that the above-barrier current in Schottky barriers on p-type semiconductor is controlled only by the heavy holes. However, in real structures, there is an ad
Externí odkaz:
http://arxiv.org/abs/1209.5528
The first study of two-dimensional electron gas in surface layers on HgMnTe with inverted bands is carried out experimentally and theoretically. It is shown that the structure of investigated capacitance magnetooscillations in HgMnTe MOS structures i
Externí odkaz:
http://arxiv.org/abs/cond-mat/0005498
Publikováno v:
Semiconductors. Feb2003, Vol. 37 Issue 2, p200. 7p.
Autor:
Radantsev, V. F., Yafyasov, A. M.
Publikováno v:
Journal of Experimental & Theoretical Physics. Sep2002, Vol. 95 Issue 3, p491. 11p.
Autor:
Shevchenko, O. Yu., Radantsev, V. F., Yafyasov, A. M., Bozhevolnov, V. B., Ivankiv, I. M., Perepelkin, A. D.
Publikováno v:
Semiconductors. Apr2002, Vol. 36 Issue 4, p390. 4p.
Autor:
Radantsev, V. F.
Publikováno v:
Journal of Experimental & Theoretical Physics. Mar99, Vol. 88 Issue 3, p552. 9p.
Akademický článek
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Publikováno v:
High Magnetic Fields in Semiconductor Physics - Proceedings of the 16th International Conference; 2005, p183-186, 4p
Autor:
Radantsev, V. F., Zavyalov, V. V.
Publikováno v:
Semiconductor Science & Technology; Mar2013, Vol. 28 Issue 3, p1-10, 10p
Autor:
RADANTSEV, V. F., KRUZHAEV, V. V.
Publikováno v:
International Journal of Nanoscience; Jun2007, Vol. 6 Issue 3/4, p301-304, 4p