Zobrazeno 1 - 10
of 11
pro vyhledávání: '"R.W. Mauntel"'
Autor:
Horacio Mendez, Louis C. Parrillo, Norm Herr, R.W. Mauntel, John Sweeney, Peter Fejes, Phil Schani
Publikováno v:
Technical Digest., International Electron Devices Meeting.
A new leakage mechanism that is a strong function of substrate bias has been observed on lightly doped drain (LDD) MOSFETs. The substrate bias dependence on this drain-to-substrate leakage current is shown to be related to the formation of sidewall s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::707f7322efa160bba49e0c8d401e6284
https://doi.org/10.1109/iedm.1988.32798
https://doi.org/10.1109/iedm.1988.32798
Publikováno v:
IEEE Journal of Solid-State Circuits. 22:704-711
The design and performance of a 32 K/spl times/8-b CMOS static RAM (SRAM) are presented. The design features a selectively pumped p-well array. Using this array technology, high-impedance polysilicon resistor loads can be used to reduce the array sta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1554073e14ead7467c07d886c7184560
https://doi.org/10.1109/jssc.1987.1052803
https://doi.org/10.1109/jssc.1987.1052803
Publikováno v:
IEEE Journal of Solid-State Circuits. 18:498-508
This paper describes the circuit design and process techniques used to produce a 35-ns 2K /spl times/ 8 HMOS static RAM aimed at future high-end microprocessor applications. The circuit design uses predecoding of the row and column decoder/driver cir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::291d3eea9d75babb7127eb8b993caa63
https://doi.org/10.1109/jssc.1983.1051984
https://doi.org/10.1109/jssc.1983.1051984
Autor:
Y. Yoshii, R.W. Mauntel, Frank K. Baker, B.A. Bergami, M. Kearney, S. Poon, S.J. Cosentino, M. Swensor, Philip J. Tobin, Louis C. Parrillo, J. Alvis, F. Pintchovski, F.T. Liou, S.W. Sun
Publikováno v:
1986 International Electron Devices Meeting.
We have developed an advanced CMOS technology for application in fast SRAMS, non-volatile memory, microprocessor and logic circuits. Features of the 1.2µm (gate and contact) double-level-poly, double-level-metal technology include a twin-well CMOS [
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93d6bc7b8e85f1ed1c2663f4b85ebbdf
https://doi.org/10.1109/iedm.1986.191160
https://doi.org/10.1109/iedm.1986.191160
Autor:
Louis C. Parrillo, J.E. Leiss, V.W. Soorholtz, R.W. Mauntel, Norm Herr, R.I. Kung, M.D. Bader, S.J. Cosentino, S.K. Madan, K.L. Wang, Horacio Mendez
Publikováno v:
1986 International Electron Devices Meeting.
A selectively pumped p-well SRAM cell technology is discussed. This technology allows the optimization of circuit speed while reducing the array leakage. In addition, a pumped p-well cell technology improves cell stability, reduces bit line capacitan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba0769f6ae2b74d7edfc7eab8ee83d86
https://doi.org/10.1109/iedm.1986.191260
https://doi.org/10.1109/iedm.1986.191260
Publikováno v:
1983 International Electron Devices Meeting.
A 1.5 micron, 250 A gate technology has been developed for high performance static RAMs. This new generation technology, HCMOS III, provides increased layout density and superior performance. A self-aligned well process sequence is used to form both
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f90a2cb5681064a49528669f17bf5bb5
https://doi.org/10.1109/iedm.1983.190511
https://doi.org/10.1109/iedm.1983.190511
Autor:
J. Manoliu, R.W. Mauntel
Publikováno v:
1984 International Electron Devices Meeting.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a24df1c6f3c679ed6b26ac667efa433d
https://doi.org/10.1109/iedm.1984.190733
https://doi.org/10.1109/iedm.1984.190733
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Conference
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