Zobrazeno 1 - 10
of 111
pro vyhledávání: '"R.W. Glew"'
Autor:
Karin Hinzer, R. Williams, F. Robert, R.W. Glew, M. Extavour, J.K. White, D. Goodchild, G. Smith, E.M. Griswold, Anthony J. SpringThorpe
Publikováno v:
Journal of Crystal Growth. 251:760-765
Compressively strained MQW InAlGaAs laser structures have been grown on [1 0 0] sulfur-doped InP substrates using digital alloy molecular beam epitaxy at temperatures in the range 480–585°C. In the limited temperature interval ∼520–555°C quan
Publikováno v:
Journal of Crystal Growth. 248:405-410
In this work, we study the growth evolution of InP stripes deposited between dielectric masks aligned to [0 1 1] on (1 0 0) InP substrates. Ridge formations are observed adjacent to the mask, which cannot be quantitatively described by existing selec
Publikováno v:
Journal of Crystal Growth. 145:764-770
A fifty period multiple quantum well stack composed of alternating layers of GaInAsP (100 A, + 1% lattice mismatch) and GaInAsP (100 A, -1% lattice mismatch) has been grown with a minimum of strain relaxation. The strain-compensated structure was ove
Autor:
R.W. Glew, Jean Camassel, E. Massone, Sandrine Juillaguet, J. Pascual, F. Alsina, Hervé Peyre
Publikováno v:
Applied Surface Science
Applied Surface Science, Elsevier, 1993, 63 (1-4), pp.177-181. ⟨10.1016/0169-4332(93)90085-P⟩
Applied Surface Science, 1993, 63 (1-4), pp.177-181. ⟨10.1016/0169-4332(93)90085-P⟩
Applied Surface Science, Elsevier, 1993, 63 (1-4), pp.177-181. ⟨10.1016/0169-4332(93)90085-P⟩
Applied Surface Science, 1993, 63 (1-4), pp.177-181. ⟨10.1016/0169-4332(93)90085-P⟩
InGaAs quantum wells (QWs), with either InP or InGaAsP barriers, are increasingly considered for optoelectronic device applications. Nevertheless, because interdiffusion across the interfaces (intermixing) results in unwanted modifications of the nom
Autor:
S N Holmes, S A Kitching, R.W. Glew, Alf R. Adams, C. G. Crookes, R A Woolley, R A Stradling, D. Lancefield, P C Klipstein, P.D. Greene
Publikováno v:
Semiconductor Science and Technology. 6:1088-1092
Extremely high-purity InP has been grown in an atmospheric-pressure MOCVD reactor over the unusually large temperature range from 57-700 degrees C. The apparent purity of the material was enhanced by the incorporation of atomic hydrogen. At 650 degre
Autor:
P.D. Greene, G.D. Henshall, Andrew G. Norman, J.E.A. Whiteaway, R.W. Glew, J.P. Stagg, B. Garrett, C.M. Lowney
Publikováno v:
Journal of Crystal Growth. 107:784-789
Atmospheric pressure MOCVD has been used to produce long wavelength MQW SCH lasers incorporating InGaAs quantum wells in an InGaAlAs waveguide surrounded by InP cladding regions. Emission wavelengths from 1.26 to 1.61 μm were obtained by varying the
Publikováno v:
Surface Science. 229:439-443
We present SIMS, electrical (IV and CV), photoluminescence and electro-optical (modulated absorption and reflectance) measurements on a number of MOCVD grown n-p-n-p-…-p and n-i-p-i-…-p GaAs doping superlattices with individual layer thicknesses
Autor:
B. Garrettl, R.W. Glew, A.P. Wright, D.J. Moule, G.H.B. Thompson, C.G. Cureton, J.E.A. Whiteaway
Publikováno v:
13th IEEE International Semiconductor Laser Conference.
The high speed response of MQW DFB lasers has been optimised using a detailed dynamic model that for the first time includes both longitudinal hole burning and carrier transport effects. The experimental FSK chirp has been reduced by a factor of 5.
Publikováno v:
LEOS '92 Conference Proceedings.
Autor:
J.K. White, R.W. Glew, St. J. Dixon-Warren, Darren Goodchild, Karin Hinzer, A.J. SpringThorpe, G. Knight
A new distributed feedback (DFB) grating structure using different doping levels of n-type InP to obtain a modulated index of refraction contrast is demonstrated. The grating consists of an array of highly doped n-type InP embedded in low-doped n-typ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2f81b73bd79f1e938223b6b9b183897b
https://nrc-publications.canada.ca/eng/view/object/?id=1ffc2efc-ed6c-47b2-812f-93e27cd926ff
https://nrc-publications.canada.ca/eng/view/object/?id=1ffc2efc-ed6c-47b2-812f-93e27cd926ff