Zobrazeno 1 - 10
of 82
pro vyhledávání: '"R.T. Leonard"'
Autor:
Andrew K. Mackenzie, Shadi Sabri, John W. Palmour, R.T. Leonard, Scott Allen, Daniel J. Lichtenwalner, Edward Van Brunt, Brett Hull, Albert A. Burk, Donald A. Gajewski
Publikováno v:
Materials Science Forum. 924:137-142
This work explores the effects of extended epitaxial defects on 4H-SiC power devices. Advanced defect mapping techniques were used on large quantities of power device wafers, and data was aggregated to correlate device electrical characteristics to d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59696970fe6fd8d7a4fdf9a39d17af70
https://doi.org/10.4028/www.scientific.net/msf.924.137
https://doi.org/10.4028/www.scientific.net/msf.924.137
Akademický článek
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Autor:
Jyothi Ambati, Albert A. Burk, Jeff Seaman, Chris Horton, Sumit Gangwal, Jianqiu Guo, Elif Balkas, Michael Dudley, Adrian Powell, Yuri I. Khlebnikov, Joseph John Sumakeris, Michael James Paisley, Valeri F Tsevtkov, R.T. Leonard, Andy McClure, M. O’Loughlin, Olek Kramarenko, Eugene Deyneka, Varad R. Sakhalkar
Publikováno v:
Materials Science Forum. 858:5-10
The growth of large diameter silicon carbide (SiC) crystals produced by the physical vapor transport (PVT) method is outlined. Methods to increase the crystal diameters, and to turn these large diameter crystals into substrates that are ready for the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::053b3c67667a0ddf22a99f7b8b86f646
https://doi.org/10.4028/www.scientific.net/msf.858.5
https://doi.org/10.4028/www.scientific.net/msf.858.5
Autor:
Edward Van Brunt, Al Burk, Daniel J. Lichtenwalner, John W. Palmour, Scott H. Allen, Shadi Sabri, Brett Hull, R.T. Leonard
Publikováno v:
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).
In this work, we report results for the 3 lot, 77 device-per-lot high temperature-reverse bias (HTRB) test, as well as work on gate oxide reliability for 3.3 kV devices in relation to the presence of material defects. The work indicates that large sc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17e28ffb1564767b3fcac647b6ed4a73
https://doi.org/10.23919/ispsd.2017.7988907
https://doi.org/10.23919/ispsd.2017.7988907
Akademický článek
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Autor:
Adrian Powell, Calvin H. Carter, Joseph John Sumakeris, Cengiz Balkas, Cem Basceri, H. McD. Hobgood, R.T. Leonard, D.P. Malta, I.I. Khlebnikov, Yuri I. Khlebnikov, Michael James Paisley, Elif Berkman, Albert A. Burk, M.F. Brady, Vijay Balakrishna, Eugene Deyneka, Valeri F. Tsvetkov, Michael J. O'Loughlin
Publikováno v:
Materials Science Forum. :3-6
Availability of high-quality, large diameter SiC wafers in quantity has bolstered the commercial application of and interest in both SiC- and nitride-based device technologies. Successful development of SiC devices requires low defect densities, whic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3720050cb306432f06eaa21c2e31416b
https://doi.org/10.4028/www.scientific.net/msf.615-617.3
https://doi.org/10.4028/www.scientific.net/msf.615-617.3
Autor:
Vijay Balakrishna, Christer Hallin, Elif Berkman, Albert A. Burk, Kenneth G. Irvine, Anant K. Agarwal, Lara Garrett, Cem Basceri, Brett Hull, Michael J. O'Loughlin, R.T. Leonard, Jonathan Young, Yuri I. Khlebnikov, Joseph John Sumakeris, Adrian Powell
Publikováno v:
Materials Science Forum. :77-82
The development of SiC bulk and epitaxial materials is reviewed with an emphasis on epitaxial growth using high-throughput, multi-wafer, vapor phase epitaxial (VPE) warm-wall planetary reactors. It will be shown how the recent emergence of low-cost h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f7ddf0fefbe932f565316083a81df99
https://doi.org/10.4028/www.scientific.net/msf.600-603.77
https://doi.org/10.4028/www.scientific.net/msf.600-603.77
Autor:
R.T. Leonard
Publikováno v:
Potassium in Agriculture
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::477149c5b0e630f1bbe1ce9e510a9886
https://doi.org/10.2134/1985.potassium.c12
https://doi.org/10.2134/1985.potassium.c12
Autor:
Michael James Paisley, R.T. Leonard, Adrian Powell, M.F. Brady, Michael J. O'Loughlin, D.A. McClure, Albert A. Burk
Publikováno v:
Materials Science Forum. :159-162
Experimental results are presented for SiC epitaxial layer growth employing a large-area, up to 8x100-mm, warm-wall planetary SiC-VPE reactor. This high-throughput reactor has been optimized for the growth of uniform 0.01 to 80-micron thick, specular
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eee8d4343f6b51e1aecd2575ae163984
https://doi.org/10.4028/www.scientific.net/msf.527-529.159
https://doi.org/10.4028/www.scientific.net/msf.527-529.159
Autor:
R.T. Leonard, Calvin H. Carter, Valeri F. Tsvetkov, D.P. Malta, H. McD. Hobgood, Jason Ronald Jenny, M.F. Brady, M.R. Calus, R.C. Glass, Adrian Powell, Stephan G. Müller
Publikováno v:
Materials Science Forum. :3-8
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fbdad2433272161d46778a5ae242cf1
https://doi.org/10.4028/www.scientific.net/msf.457-460.3
https://doi.org/10.4028/www.scientific.net/msf.457-460.3