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pro vyhledávání: '"R.T. Ida"'
Autor:
R.T. Ida, W.F. Davis
Publikováno v:
Proceedings of the Bipolar Circuits and Technology Meeting.
A statistical bipolar IC simulation methodology that employs functional Gummel-Poon model parameters controlled by an independent set of process parameters extracted at a wafer probe is discussed. Fractional factorial screening and Box-Behnken experi