Zobrazeno 1 - 10 of 35 pro vyhledávání: '"R.T. Grimes"'
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Hydrogenic impurities in GaAs/GaAlAs multi-quantum wells in tilted magnetic fields
Autor: Janette L. Dunn, C A Bates, J.M. Chamberlain, P W Barmby, R.T. Grimes
Publikováno v: Semiconductor Science and Technology. 8:1711-1714
Far-infrared photoconductivity measurements on a GaAs/GaAlAs multi-quantum well sample in which the normal to the plane of the sample is tipped away from the magnetic field direction are reported. In order to explain these results, the model develope
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::dbd72e8ba74fb50c64062b7618ebc81a
https://doi.org/10.1088/0268-1242/8/9/006
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3
Comments on the origin of low-energy structure observed in the far-infrared cyclotron resonance of ultra-high mobility n-GaAs and n-InP
Autor: R.T. Grimes, C J G M Langerak, S J Hawksworth, John Singleton, C.R. Stanley, E P Pearl, J.M. Chamberlain, M.B. Stanaway, Janette L. Dunn, C A Bates, S P Najda
Publikováno v: Semiconductor Science and Technology. 7:1499-1503
Recently optically detected cyclotron resonance spectra reported by Ahmed et al. in ultra-pure n-GaAs have revealed low-energy structure associated with the cyclotron resonance. The authors have investigated the far-infrared photoconductive response
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::14ffa3f07593e1fa6f30b6d08cb02d7d
https://doi.org/10.1088/0268-1242/7/12/013
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4
The two-dimensional electron gas at the CdTe/InSb interface: Cyclotron resonance and Shubnikov-de Haas investigations
Autor: D.E. Ashenford, J.M. Chamberlain, C J G M Langerak, G. Hill, B. Lunn, M.B. Stanaway, John Singleton, T.J.B.M. Janssen, R.T. Grimes
Publikováno v: Surface Science. 267:133-136
The 2DEG in CdTe/InSb heterojunctions has been investigated using magnetotransport and far-infrared magnetotransmission measurements. Two series of oscillations are seen in the Shubnikov-de Haas effect; however, a comparison of the parallel field mag
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::df2cff0fe26215c45ea8536457299839
https://doi.org/10.1016/0039-6028(92)91106-l
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5
4 × 105 cm2 V−1 s−1 peak electron mobilities in GaAs grown by solid source MBE with As2
Autor: R.T. Grimes, A.H. Kean, Martin Christopher Holland, C.R. Stanley, J.M. Chamberlain, M.B. Stanaway
Publikováno v: Journal of Crystal Growth. 111:14-19
A detailed study into the molecular beam epitaxy of high purity n-GaAs with arsenic dimers has been undertaken, culminating in the growth of a layer with a peak mobility of ≈4.0 × 10 5 cm 2 V −1 s −1 at 28–40 K, the highest ever recorded in
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a106f465ae67bdad7954a0929679f7d6
https://doi.org/10.1016/0022-0248(91)90939-3
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Electrical characterization of molecular beam epitaxial GaAs with peak electron mobilities up to ≊4×105cm2 V−1 s−1
Autor: A.H. Kean, Martin Christopher Holland, J.M. Chamberlain, Colin Stanley, R.T. Grimes, M.B. Stanaway
Publikováno v: Applied physics letters, 1991, Vol.58(5), pp.478-480 [Peer Reviewed Journal]
The effect of varying the temperature (T cr) of an As4→As2 cracker furnace between 600 and 700 °C on the properties of GaAs grown by molecular beam epitaxy has been evaluated using 4–300 K Hall measurements and 4.2 K far‐infrared photoconducti
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5cd60899f7c01363b53dbb21c2b50f44
https://doi.org/10.1063/1.104613
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9
Subnanosecond far infrared photoconductivity from a GaAs/AlGaAs multiquantum well
Autor: G. Hill, M.B. Stanaway, R. E. M. de Bekker, R.T. Grimes, P. Wyder, Mohamed Henini, O.H. Hughes, L. M. Claessen, J.M. Chamberlain
Publikováno v: Journal of Applied Physics. 68:1913-1915
The far infrared (FIR) photoconductivity of GaAs/AlGaAs multiquantum wells (MQWs) doped with silicon has been investigated. The spectral response is consistent with extrinsic photoconductivity from shallow donors with an effective Rydberg of approxim
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::49a388a3a9094db9e555bd5c16f07d10
https://doi.org/10.1063/1.346582
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10
Excited-state spectroscopy of confined shallow donor impurities in a multi-quantum well
Autor: Mohamed Henini, Janette L. Dunn, O.H. Hughes, R.T. Grimes, G. Hill, M.B. Stanaway, J.M. Chamberlain
Publikováno v: Semiconductor Science and Technology. 5:305-307
The far infrared (FIR) photoconductive response of silicon-doped GaAs/AlGaAs multi-quantum wells (MQWS) at 4.2 K reveals evidence of several transitions from the ground state to higher excited states of the confined impurity (e.g. 1s-3d+1, 1s-3p+1, 1
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d9eb01ad3200a8b7cc80490a0c1af051
https://doi.org/10.1088/0268-1242/5/4/004
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