Zobrazeno 1 - 10
of 92
pro vyhledávání: '"R.S. Sussmann"'
Autor:
R.S. Sussmann, L. Tozzetti, Giuseppe Cautero, M. Di Fraia, Sergio Carrato, Emanuele Pace, A. De Sio, Jocelyn Achard, Alexandre Tallaire, M. Antonelli, R.H. Menk
Publikováno v:
Diamond and Related Materials. 34:36-40
article i nfo Diamond is one of the most promising materials for developing innovative electronic devices. Chemical va- pour deposition (CVD) homoepitaxial growth allows the synthesis of high quality single crystal diamond plates. However, the use of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4f08dd2961bb5e0fe3f03993a13165dd
https://doi.org/10.1016/j.diamond.2013.01.011
https://doi.org/10.1016/j.diamond.2013.01.011
Autor:
Alexandre Tallaire, R. J. Cruddace, Jocelyn Achard, Alan T. Collins, R.S. Sussmann, Andrew M. Edmonds, D. Charles, Alix Gicquel, Mark E. Newton
Publikováno v:
Diamond and Related Materials. 15:1700-1707
Single-crystal homoepitaxial diamond has been grown by chemical vapour deposition using a high-density microwave plasma. It has been shown that the growth rate can be increased by factors of up to 2.5 by adding small concentrations (2 to 10 ppm) of n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d45f4fef746019b06e345b9355f5d125
https://doi.org/10.1016/j.diamond.2006.02.005
https://doi.org/10.1016/j.diamond.2006.02.005
Publikováno v:
Journal of Crystal Growth. 284:396-405
This is a detailed study of the process parameters that control the synthesis of homoepitaxial single-crystal diamond by chemical vapour deposition (CVD) using a microwave plasma-assisted reactor. The effects of substrate temperature, methane concent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93d60676a652b79e7165ab018e714b6c
https://doi.org/10.1016/j.jcrysgro.2005.07.046
https://doi.org/10.1016/j.jcrysgro.2005.07.046
Publikováno v:
physica status solidi (a). 201:2419-2424
In this study, homoepitaxial diamond films were grown on HPHT Ib synthetic diamonds by microwave plasma assisted CVD (MWPACVD) using a two step process. Etching of the diamond substrates prior to growth was performed in oxygen-hydrogen or oxygen-argo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b876b2a3923d2679a51a8146b695fd8
https://doi.org/10.1002/pssa.200405164
https://doi.org/10.1002/pssa.200405164
Autor:
Jocelyn Achard, Alexandre Tallaire, François Silva, Alix Gicquel, Marie-Claude Castex, R.S. Sussmann, H. Schneider
Publikováno v:
Diamond and Related Materials. 13:876-880
Depending on purity, diamond could exhibit very high breakdown threshold voltages, high free carrier mobilities and relatively high free carrier lifetimes. For these reasons, diamond has been considered to be well suited for radiation induced high po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9585e2fd6a4b361fd119fde9bf6c4ca5
https://doi.org/10.1016/j.diamond.2003.12.005
https://doi.org/10.1016/j.diamond.2003.12.005
Publikováno v:
Diamond and Related Materials. 12:369-373
This work reports on a novel plasma etching apparatus in which the plasma is excited at microwave frequencies and allowed to diffuse to the diamond surface. In this apparatus, an electric bias voltage independent of gas pressure and injected power ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1091d6b2cb7e7e6d9f4754e943632aa9
https://doi.org/10.1016/s0925-9635(02)00385-0
https://doi.org/10.1016/s0925-9635(02)00385-0
Publikováno v:
Diamond and Related Materials. 10:731-735
Data are presented on chemical vapor deposited (CVD) diamond films with thicknesses between 0.1 and 0.8 mm. Infrared and Raman measurements are compared with the through-thickness and in-plane thermal conductivities measured using thermal flash and h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f0348770ae923018f54d3cb17f2a0f5
https://doi.org/10.1016/s0925-9635(00)00515-x
https://doi.org/10.1016/s0925-9635(00)00515-x
Autor:
G. Hill, A. J. Whitehead, Geoffrey Alan Scarsbrook, Stuart D. Walker, J. Conway, R.S. Sussmann, R. J. Airey, Craig Buttar, S. Ramkumar
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 460:20-26
Diamond is potentially a very suitable material for use as a radiation dosimeter; the wide band gap results in low dark currents and low sensitivity to visible light, the high carrier mobilities can give rapid response, the very high density of stron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0574648e6d65f5d8c0d11b89b09cc056
https://doi.org/10.1016/s0168-9002(00)01090-1
https://doi.org/10.1016/s0168-9002(00)01090-1
Autor:
R.S Sussmann, S.E Coe
Publikováno v:
Diamond and Related Materials. 9:1726-1729
The exceptional combination of mechanical, thermal, chemical and optical properties of diamond make this material an ideal choice for numerous applications in which materials are required to operate in adverse environments exposed to abrasion or chem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1519d1d050b4ccc23c3151e90e98cbf3
https://doi.org/10.1016/s0925-9635(00)00298-3
https://doi.org/10.1016/s0925-9635(00)00298-3
Publikováno v:
Diamond and Related Materials. 9:1021-1025
The quasi-parallel collinear photothermal deflection (PTD) technique was applied to the investigation of the optical absorption coefficient at the CO2 laser wavelength (10.6 μm) for a set of chemical vapour deposited (CVD) diamond windows of various
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de1832345bd61464baaef7380aae34be
https://doi.org/10.1016/s0925-9635(99)00222-8
https://doi.org/10.1016/s0925-9635(99)00222-8