Výsledky vyhledávání

Single-mode monolithic quantum-dot VCSEL in 1.3 /spl mu/m with sidemode suppression ratio over 30 dB

Autor: H. C. Kuo, Peng-Chun Peng, K.F. Lin, G. Lin, Fang-I Lai, H.P. Yang, Y. H. Chang, S. C. Wang, R.S. Hsiao, W.K. Tsai, J.Y. Chi, H.C. Yu

Publikováno v: IEEE Photonics Technology Letters. 18:847-849

We present monolithic quantum-dot vertical-cavity surface-emitting lasers (QD VCSELs) operating in the 1.3-/spl mu/m optical communication wavelength. The QD VCSELs have adapted fully doped structure on GaAs substrate. The output power is /spl sim/33

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::12a027d89c3065f45c979d9dca84c423
https://doi.org/10.1109/lpt.2006.871831

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1.3-/spl mu/m InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE

Autor: H. C. Kuo, Y.K. Su, J.Y. Chi, S. Mikhrin, Fang-I Lai, Y. H. Chang, K.F. Lin, Jyh-Shyang Wang, H.P.D. Yang, Sung-Yen Chang, R.S. Hsiao, C.P. Sung, J.M. Wang, Hsin-Chieh Yu

Publikováno v: IEEE Photonics Technology Letters. 18:418-420

We report InAs-InGaAs quantum-dot vertical-cavity surface-emitting lasers (VCSELs) grown by molecular beam epitaxy with fully doped n- and p-doped AlGaAs distributed Bragg reflectors and including an AlAs layer to form a current and waveguiding apert

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b74d3efa07f7eeb320fbe1112a3672b0
https://doi.org/10.1109/lpt.2005.863166

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A leading-edge 0.9µm pixel CMOS image sensor technology with backside illumination: Future challenges for pixel scaling

Autor: P.S. Chou, Shou-Gwo Wuu, T.H. Hsu, K.Y. Chou, F. L. Hsueh, H.Y. Tu, Yeur-Luen Tu, Luan Tran, Tseng Chien-Hsien, Y.P. Chao, R.S. Hsiao, Chi-Chuan Wang, B.C. Hseih, Chia-Shiung Tsai, S. Takahashi, R.J. Lin

Publikováno v: 2010 International Electron Devices Meeting.

This paper presents process breakthroughs that enable a BSI 0.9µm pixel formation and its performance. The technology was developed using 300mm bulk silicon starting wafers with the state-of-the-art tool set for BSI sensor processing. This is the fi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b979265ac21d450461dca9cc8b1012d6
https://doi.org/10.1109/iedm.2010.5703358

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High-Power Single Mode InGaAs Sub-Monolayer Quantum-Dot Photonic-Crystal VCSELs

Autor: Gray Lin, Hao-Chung Kuo, I-Chen Hsu, Jim Y. Chi, Fang-I Lai, Hung-Pin D. Yang, R.S. Hsiao, S. A. Blokhin, Nikolay A. Maleev

Publikováno v: 2006 IEEE 20th International Semiconductor Laser Conference, 2006. Conference Digest..

An InGaAs sub-monolayer (SML) quantum dot photonic crystal vertical-cavity surface-emitting laser (QD PhC-VCSEL) for fiber-optic applications is first demonstrated. Single fundamental mode CW output power of 3.8 mW has been achieved in the 990 nm ran

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fddfe1a70f41cb3f3c5e1045de9bf55c
https://doi.org/10.1109/islc.2006.1708091

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Surface photovoltage spectroscopy and photoluminescence study of vertically stacked self-assembled InAs/GaAs quantum dots

Autor: Hung-Pin Hsu, Jim Y. Chi, J.S. Wang, P. Sitarek, L.C. Wei, Ying-Sheng Huang, R.S. Hsiao, C.M. Lai, Shih-Yen Lin, H.S. Chen

Publikováno v: 5th IEEE Conference on Nanotechnology, 2005..

We present a study of two 30-layer stacks of self-assembled InAs/GaAs quantum dots with different spacer layer (SL) thickness using surface photovoltage spectroscopy (SPS) and photoluminescence (PL) at room temperature. Both PL and SPS spectra of sta

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::63053045ab373a9648925592317bc7a1
https://doi.org/10.1109/nano.2005.1500761

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