Zobrazeno 1 - 10
of 45
pro vyhledávání: '"R.S. Beech"'
Publikováno v:
Sensors and Actuators A: Physical. 76:225-230
Anisotropic and giant magnetoresistive (AMR and GMR, respectively) sensors are attractive for industrial applications, as they are more sensitive and stable than Hall sensors. Their performance can be improved by AC excitation: flipping for AMR and A
Publikováno v:
IEEE Transactions on Magnetics. 33:2392-2396
End-on (vertical) giant magnetoresistance (GMR) head sensors can be made with high sensitivity and high permeability by use of the parallel coupling existing in sandwich materials and by having the effective easy axis along, rather than across, the s
Publikováno v:
IEEE Transactions on Magnetics. 37:1681-1683
Calculations which were done for an idealized geometry, showed that exchange coupling around the edge of a sandwich structure formed by folding the top magnetic layer around the edge and connecting to the bottom magnetic layer, increases the field ne
Publikováno v:
Journal of Applied Physics. 87:6388-6390
An analysis shows that for pseudospin valve elements with smooth edges, the sense field becomes ineffective in reducing the switching threshold for the thin layer in the body of the element if the element is wider than about 0.35 μm because of domai
Publikováno v:
Journal of Applied Physics. 87:6403-6405
Memory cells have been fabricated and tested to demonstrate storage in the pinned layer of a giant magnetoresistance (GMR) spin valve film. The spin valve was top pinned with a FeMn film and gave about 4% GMR ratio. The memory cell consisted of an ob
Publikováno v:
IEEE Transactions on Magnetics. 34:1060-1062
Pseudo spin valve cells with critical dimension 0.15 /spl mu/m were fabricated using e-beam lithography and exercised with an externally applied magnetic field. Data indicate that bit end shaping is important for cell stability. At such small critica
Publikováno v:
Journal of Applied Physics. 83:6688-6690
Pinned spin-dependent tunneling devices were fabricated and tested in a mode suited for low-field sensing. The basic structure of the devices was NiFeCo125/Al2O325/CoFe70/Ru9/CoFe70/ FeMn125 (in A). This structure had a tunneling resistivity of 110 M
Publikováno v:
IEEE Transactions on Magnetics. 33:3280-3282
It is shown experimentally for 0.4 micron wide "pseudo spin valve" memory cells that a bias field across an element significantly increases or decreases the switching threshold of the thicker films which store the data depending on whether the bias a
Publikováno v:
7th Joint MMM-Intermag Conference. Abstracts (Cat. No.98CH36275).
Publikováno v:
7th Joint MMM-Intermag Conference. Abstracts (Cat. No.98CH36275).