Zobrazeno 1 - 10
of 91
pro vyhledávání: '"R.R. Siergiej"'
Autor:
R.R. Siergiej, Guofu Niu, Chin-Che Tin, John D. Cressler, Charles D. Ellis, David C. Sheridan, J. Neil Merrett
Publikováno v:
Materials Science Forum. :1339-1342
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7329c3511b3efb6cbdbf3f9dd68699fd
https://doi.org/10.4028/www.scientific.net/msf.338-342.1339
https://doi.org/10.4028/www.scientific.net/msf.338-342.1339
Autor:
Al Burk, M.J O'Loughlin, C.D. Brandt, R.C Clarke, M.F MacMillan, Anant K. Agarwal, R.R. Siergiej, S. Sriram, V. Balakrishna
Publikováno v:
Solid-State Electronics. 43:1459-1464
Wide bandgap semiconducting materials are promising candidates for high-power, high-temperature, microwave and optoelectronic devices because of their superior thermal and electrical properties in comparison to conventional semiconductors. Recent dev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe0ec56264bd2fcc56545ea5057118f7
https://doi.org/10.1016/s0038-1101(99)00089-1
https://doi.org/10.1016/s0038-1101(99)00089-1
Autor:
C.D. Brandt, David C. Sheridan, M.F MacMillan, Larry B. Rowland, Anant K. Agarwal, Jeffrey B. Casady, R.R. Siergiej, Phillip Albert Sanger, S. Seshadri
Publikováno v:
Solid-State Electronics. 42:2165-2176
Silicon carbide (SiC) is an emerging semiconductor material which has been widely predicted to be superior to both Si and GaAs in the area of power electronic switching devices. This paper presents an overview of SiC power devices and concludes that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d2ecb4709a090d9128ceb183adea2fa
https://doi.org/10.1016/s0038-1101(98)00212-3
https://doi.org/10.1016/s0038-1101(98)00212-3
Publikováno v:
Solid-State Electronics. 39:777-784
6HSiC depletion-mode, n-channel MOSFETs were analyzed across the temperature range of 295–723 K. Effective channel mobilities ranged from 94 cm2V−1·s−1 at 296K to about 20 cm2V−1·s−1 in the five devices measured. Small-signal voltage g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a26d35eb99d37b8709f95ba3be9c692a
https://doi.org/10.1016/0038-1101(95)00420-3
https://doi.org/10.1016/0038-1101(95)00420-3
Publikováno v:
Solid-State Electronics. 35:843-854
In highly doped n -channel small geometry devices, the conduction band is quantized into discrete energy levels when the channel is inverted. In addition, the carriers are localized spatially, and the centroid of charge is a finite distance away from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fe9925bf29fe47c786517f310365a25
https://doi.org/10.1016/0038-1101(92)90287-m
https://doi.org/10.1016/0038-1101(92)90287-m
Autor:
R.R. Siergiej, Marvin H. White
Publikováno v:
IEEE Transactions on Electron Devices. 39:734-737
The authors have developed an extraction technique suitable for studying mixed dielectric systems in MOS transistors. The method gives accurate modeling parameters for low-field mobility and surface roughness scattering, and it removes the dependence
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64edf7e12a2aab6c3c8677bda8ceaecb
https://doi.org/10.1109/16.123502
https://doi.org/10.1109/16.123502
Autor:
Anant K. Agarwal, Maurice H. Hanes, M.C. Driver, Terence W O'keeffe, J.R. Szedon, R.R. Siergiej, H.M. Hobgood, T.J. Smith, Harvey C. Nathanson, C.D. Brandt, R.N. Thomas
Publikováno v:
IEEE International SOI Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8b3834dd9230d876a786fe676afb17e
https://doi.org/10.1109/soi.1992.664833
https://doi.org/10.1109/soi.1992.664833
Autor:
C.D. Brandt, T.J. Smith, Rowland C. Clarke, S. Sriram, R.R. Siergiej, A.A. Burk, Anant K. Agarwal, P.G. McMullin, H.M. Hobgood, P.A. Orphanos
Publikováno v:
52nd Annual Device Research Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04ba92b001b952bf70ce5f930e82bf33
https://doi.org/10.1109/drc.1994.1009400
https://doi.org/10.1109/drc.1994.1009400
Publikováno v:
IEEE Electron Device Letters. 16:274-276
The noise spectra for n-channel, depletion-mode MOSFETs fabricated in 6H-SiC material were measured from 1-10/sup 5/ Hz at room temperature. Devices were biased in the linear regime, where the noise spectra was found to be dependent upon the drain-to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb540d76ca096f0efb3520bdd2281ed3
https://doi.org/10.1109/55.790733
https://doi.org/10.1109/55.790733
Publikováno v:
1999 57th Annual Device Research Conference Digest (Cat. No.99TH8393).
4H SiC Static Induction Transistors (SITs) have shown extraordinary power density exceeding 60 kW/cm/sup 2/. These devices have shown pulsed power of 700 W in L-band and 300 W in S-band for RADAR applications. In current SIT designs the footprint of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80b00e8815d139f75fe067b402479ced
https://doi.org/10.1109/drc.1999.806339
https://doi.org/10.1109/drc.1999.806339