Zobrazeno 1 - 10
of 29
pro vyhledávání: '"R.R. O'Brien"'
Autor:
C.L. Kirkpatrick, R.R. O'Brien
Publikováno v:
Annual Reliability and Maintainability Symposium, 1984. Proceedings..
The F-15 Eagle is a blend of maintainability and capability that enjoys a high level of readiness. This paper addresses the F-15 Full Mission Capable (FMC) rates versus classic maintainability indicators such as Man Hour Per Flight Hour and Mean Time
Publikováno v:
IEEE Transactions on Electron Devices. 30:686-693
Experimentally and by computer simulation, we have investigated the collection process of alpha-particle-generated charge in silicon devices. We studied the total charge collected and the transient characteristics of collection for various structures
Autor:
R.R. O'Brien, D.P. Kennedy
Publikováno v:
IRE Transactions on Electron Devices. 9:478-483
A one-dimensional analysis is presented on the avalanche breakdown characteristics of a diffused p-n junction diode. By numerically integrating the carrier ionization rate in a junction space-charge layer, avalanche breakdown voltage is calculated fo
Publikováno v:
IEEE Electron Device Letters. 2:103-105
We studied the transient characteristics of charge collection from alpha-particle tracks in silicon devices. We have run computer calculations using the finite element method, in parallel with experimental work. When an alpha particle penetrates a pn
Autor:
R.R. O'Brien
Publikováno v:
IEEE Transactions on Electron Devices. 27:1848-1849
Autor:
R.R. O'Brien, D.P. Kennedy
Publikováno v:
Proceedings of the IEEE. 57:705-706
An assumption of charge neutrality is frequently used to calculate the electric field arising from an impurity atom density gradient in semiconductor material of homogeneous conductivity type. It is shown that this charge neutral assumption represent
Autor:
David P. Kennedy, R.R. O'Brien
Publikováno v:
Solid-State Electronics. 12:829-830
Autor:
D.P. Kennedy, R.R. O'Brien
Publikováno v:
Electronics Letters. 8:173
Statistical fluctuations inherent in any diffusion process could place fundamental limitations on the minimum basewidth obtainable in bipolar-transistor fabrication. Calculations are presented to demonstrate the probability of encountering channels o
Autor:
D.P. Kennedy, R.R. O'Brien
Publikováno v:
Electronics Letters. 7:714
It is shown that j.f.e.t. structures containing a semiconductor substrate can sometimes exhibit a substantially lower saturation resistance than structures containing an ideally insulating substrate. This characteristic is attributed to velocity-limi
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