Zobrazeno 1 - 10
of 19
pro vyhledávání: '"R.R. Moats"'
Autor:
R.R. Moats, R.J. Espinosa
Publikováno v:
IEEE Transactions on Electron Devices. 24:13-21
The design and operation of injected-beam-crossed-field amplifiers, which provide efficient amplification over octave frequency bands with grid control in compact PM Focused format, are described. Dielectric supported meander lines, which are used to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3eafb37e163887f1fa21e4ddf779b495
https://doi.org/10.1109/t-ed.1977.18671
https://doi.org/10.1109/t-ed.1977.18671
Autor:
R.R. Moats
Publikováno v:
1976 International Electron Devices Meeting.
Deviations from ideal PPM focusing of electron beams are calculated by means of paraxial-ray equations by a simple program on a time-sharing computer. Such calculations are of interest to rapidly predict the effect of variations of operating conditio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2298c92f7b77cb29c37037575950430a
https://doi.org/10.1109/iedm.1976.189095
https://doi.org/10.1109/iedm.1976.189095
Autor:
R.R. Moats, G.G. Groshart
Publikováno v:
1980 International Electron Devices Meeting.
Injected-beam crossed-field amplifiers (IBCFAs) are admirably suited for multimode transmitting amplifiers because beam current can be continuously varied from zero to maximum with good beam focusing and with high efficiency over a substantial range
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55184c5118d958b9fe0db068f86b2376
https://doi.org/10.1109/iedm.1980.189785
https://doi.org/10.1109/iedm.1980.189785
Autor:
R.R. Moats
Publikováno v:
1979 International Electron Devices Meeting.
The properties of slow-wave circuits are affected by the configuration of the dielectric loading. The phase velocity and the impedance are functions of the relative dielectric loadinq from each bar (of a bar-type circuit) or each turn (of a helix) to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70b2c5c365ff2774fbfc75de9c6a5b2c
https://doi.org/10.1109/iedm.1979.189642
https://doi.org/10.1109/iedm.1979.189642
Autor:
R.R. Moats, J.A. Arnaud
Publikováno v:
1967 International Electron Devices Meeting.
This paper describes a family of crossed-field power-output noise generator tubes, which may be characterized as injected-beam forward-wave devices. They consist of a noisy gun, a drift space, and a crossed-field amplifier which amplifies the noise f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da55871f57a026d30daf5a89f7bf48d8
https://doi.org/10.1109/iedm.1967.187785
https://doi.org/10.1109/iedm.1967.187785
Publikováno v:
1961 International Electron Devices Meeting.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f31daafedc86299f4c53a704eb9687c
https://doi.org/10.1109/iedm.1961.187249
https://doi.org/10.1109/iedm.1961.187249
Publikováno v:
IRE Transactions on Electron Devices. 9:115-115
This paper describes a new type of microwave coaxial gas switch tube which utilizes an electronically controlled pulsed hydrogen arc discharge. The device fires in a few tenths of a microsecond and recovers in a time of the order of 10 microseconds.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9269bc947e315d15f94e6b9814c42110
https://doi.org/10.1109/t-ed.1962.14936
https://doi.org/10.1109/t-ed.1962.14936
Autor:
R.R. Moats, M.B. Fisher
Publikováno v:
IEEE Transactions on Electron Devices. 10:108-108
The extension of crossed-field, or M-type, backward-wave oscillators into frequency ranges above X-band is described. Two tube types cover ranges of 10.8 to 15 Gc and 14.9 to 18.1 Gc, respectively, with minimum power outputs of 120 and 80 watts being
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2764414c65d0f934d5a1b908d9decc15
https://doi.org/10.1109/t-ed.1963.15150
https://doi.org/10.1109/t-ed.1963.15150
Autor:
J.A. Arnaud, R.R. Moats
Publikováno v:
IEEE Transactions on Electron Devices. 15:412-412
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c62e9990315acd79fcbbc77c6d05ad0
https://doi.org/10.1109/t-ed.1968.16217
https://doi.org/10.1109/t-ed.1968.16217