Zobrazeno 1 - 10
of 41
pro vyhledávání: '"R.Q. Cui"'
Publikováno v:
Applied Surface Science. 255:2910-2915
Hydrogenated nanocrystalline silicon (nc-Si:H) grown by hot-wire chemical vapor deposition (HWCVD) has recently drawn significant attention in the area of thin-film large area optoelectronics due to possibility of high deposition rate. We report on t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::feab78412889e054f727a6b554d98c56
https://doi.org/10.1016/j.apsusc.2008.08.038
https://doi.org/10.1016/j.apsusc.2008.08.038
Publikováno v:
Frontiers of Energy and Power Engineering in China. 2:519-523
Rapid thermal processing (RTP) of SiNx thin films from PECVD with low temperature was investigated. A special processing condition of this technique which could greatly increase the minority lifetime was found in the experiments. The processing mecha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10ae873f931842a900399037216b172c
https://doi.org/10.1007/s11708-008-0095-1
https://doi.org/10.1007/s11708-008-0095-1
Publikováno v:
Microelectronics Journal. 39:12-19
We report on the effects of deposition pressure P"d on the growth and properties of the B-doped nanocrystalline silicon (nc-Si:H) thin films grown by hot-wire chemical vapor deposition (HWCVD) at very high hydrogen dilution of 98.8%. We found that th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54d4afd00d193263350f8492308f4d42
https://doi.org/10.1016/j.mejo.2007.10.019
https://doi.org/10.1016/j.mejo.2007.10.019
Publikováno v:
Solar Energy Materials and Solar Cells. 86:135-144
Intrinsic and n-type hydrogenated nanocrystalline silicon thin films (nc-Si:H) were deposited at a temperature as low as 95 °C by high-frequency (HF) sputtering, with hydrogen dilution percentage varying from 31% to 73%. In order to study the proper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61602cc608de717e454f5f3ad98bdaaf
https://doi.org/10.1016/j.solmat.2004.05.025
https://doi.org/10.1016/j.solmat.2004.05.025
Publikováno v:
Materials Science and Engineering: B. 116:161-167
The aim of this work is to determine the sensitivity in the semiconductor measurement by microwave photoconductance decay. The reflection coefficient and the sensitivity were determined by solving the Maxwell equations and the method of a transfer ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a38e34eaec7cede46bc08b995e8f4864
https://doi.org/10.1016/j.mseb.2004.09.028
https://doi.org/10.1016/j.mseb.2004.09.028
Publikováno v:
Solar Energy Materials and Solar Cells. 80:265-272
This paper reports the study on a field-aided collection in p-on-n GaInP2 top cells. The cells were produced by metalorganic vapor phase epitaxy at a low gas pressure. In order to optimize the device configuration, numerical simulations have been per
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93e4c26a8b5fdecb0f7622d211687224
https://doi.org/10.1016/j.solmat.2003.08.002
https://doi.org/10.1016/j.solmat.2003.08.002
Publikováno v:
Journal of Crystal Growth. 256:254-260
We report on the growth of phosphorus doped nc-Si:H thin films by plasma enhanced chemical vapor deposition and employ micro-Raman scattering and conductivity measurements to investigate the doping dependence of the structural properties. The grain s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c59150758c0de965c11cd48b35a633a6
https://doi.org/10.1016/s0022-0248(03)01371-x
https://doi.org/10.1016/s0022-0248(03)01371-x
Publikováno v:
Solar Energy Materials and Solar Cells. 70:487-493
This paper reports on the successful deposition of amorphous carbon nitride thin films (a-CN x ) and fabrication of ITO/a-CN x /Al Schottky thin-film solar cells by using the technique of ion beam sputtering. XPS and Raman spectra are used to charact
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55e0cf66b528fb57448d8b663ddc4ea8
https://doi.org/10.1016/s0927-0248(01)00086-1
https://doi.org/10.1016/s0927-0248(01)00086-1
Autor:
Tonghua Sun, Fanying Meng, R.Q. Cui, Yong-Rui Wang, Q.J. Pang, Zihao Ding, Zhibin Zhou, Xiang Yu
Publikováno v:
Applied Surface Science. 172:245-252
We deposited high quality doped indium oxide and tin oxide thin films by an improved spray CVD process, which we characterize as ultrasonic spraying. The microstructure and electrical properties of these thin films are analyzed by XRD, AFM, and van d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eda9e6e36703318aae6f74a890f9a432
https://doi.org/10.1016/s0169-4332(00)00862-x
https://doi.org/10.1016/s0169-4332(00)00862-x
Publikováno v:
Experimental brain research. 134(1)
The present set of experiments investigated the Bereitschaftspotential (BP) preceding voluntary bimanual sequential simple (task 1) and complex movements (task 2) in supplementary/cingulate and primary motor areas (SCMA, MIs) using 64-channel direct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b3ede5631d1b1fb1ea74b4a5fae3345b
https://pubmed.ncbi.nlm.nih.gov/11026725
https://pubmed.ncbi.nlm.nih.gov/11026725