Zobrazeno 1 - 10
of 122
pro vyhledávání: '"R.P. Mertens"'
Autor:
P. Van Mieghem, R.P. Mertens
Publikováno v:
Advanced Silicon and Semiconducting Silicon-Alloy Based Materials and Devices ISBN: 9781003208860
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80aad590cd4b8f4e01b8d3f8898a2289
https://doi.org/10.1201/9781003208860-2
https://doi.org/10.1201/9781003208860-2
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 47:1863-1872
In this paper, the design and realization of coplanar Lange couplers integrated in a multilayer thin-film multichip module deposition (MCM-D) technology is discussed. The MCM-D technology has been well established for the interconnection of high-spee
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::916342b4e3052ca5ee4e8a5314a372c1
https://doi.org/10.1109/22.788524
https://doi.org/10.1109/22.788524
Publisher Summary This chapter focuses on the properties of moderately and heavily doped silicon (Si) and germanium (Ge); lightly doped crystals are only briefly considered in it. It discusses the work (experimental as well as theoretical) that helps
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba94b971238a1e21bc57f0f33fdfa478
https://doi.org/10.1016/s0065-2539(08)60913-0
https://doi.org/10.1016/s0065-2539(08)60913-0
Publikováno v:
19th IEEE International Conference on Micro Electro Mechanical Systems; 2006, p902-905, 4p
Publikováno v:
Microelectronic Engineering. 19:vii
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f75a890682a0e55d8e3b2edea5fd2ab
https://doi.org/10.1016/0167-9317(92)90378-5
https://doi.org/10.1016/0167-9317(92)90378-5
Autor:
S.C. Blackstone, R.P. Mertens
Publikováno v:
IEEE Journal of Solid-State Circuits. 13:893-898
The SCTL gate which promises increased speed and reduced power is discussed. It involves the use of a single lowly doped collector incorporating Schottky diodes to decode the output. A complete electrical model is formulated and compared with experim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa2c2f55462d4e6bf30fc66bb9884fd7
https://doi.org/10.1109/jssc.1978.1052065
https://doi.org/10.1109/jssc.1978.1052065
Autor:
R.P. Mertens, S.C. Blackstone
Publikováno v:
IEEE Journal of Solid-State Circuits. 12:270-275
A new I/SUP 2/L gate which promises increased packing density and increased speed is discussed. It incorporates the use of a Schottky contact as the collector of the vertical switching transistor of an I/SUP 2/L gate. Calculations and experiments sho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74c12aec27569c5b1a544cd3c95da3e3
https://doi.org/10.1109/jssc.1977.1050890
https://doi.org/10.1109/jssc.1977.1050890
Publikováno v:
IEEE Journal of Solid-State Circuits. 12:163-170
The validity of the charge control approach is checked for the normal (upward) operation of an I/SUP 2/L gate, leading to the conclusion that deviations are mainly due to the distributed nature of the base resistance. An alternative method is present
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5dd5f8cf6c78fc33036d82854515748d
https://doi.org/10.1109/jssc.1977.1050866
https://doi.org/10.1109/jssc.1977.1050866
Publikováno v:
Solid-State Electronics. 26:569-576
The predominance of phonon-assisted band-band Auger recombination in highly doped silicon is demonstrated by showing that no recombination mechanism involving common (unavoidable) defects in silicon can yield carrier lifetimes that are consistent wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b51742de3353eaac120dc89dce475850
https://doi.org/10.1016/0038-1101(83)90173-9
https://doi.org/10.1016/0038-1101(83)90173-9