Zobrazeno 1 - 10
of 288
pro vyhledávání: '"R.P. Mertens"'
Autor:
P. Van Mieghem, R.P. Mertens
Publikováno v:
Advanced Silicon and Semiconducting Silicon-Alloy Based Materials and Devices ISBN: 9781003208860
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80aad590cd4b8f4e01b8d3f8898a2289
https://doi.org/10.1201/9781003208860-2
https://doi.org/10.1201/9781003208860-2
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 47:1863-1872
In this paper, the design and realization of coplanar Lange couplers integrated in a multilayer thin-film multichip module deposition (MCM-D) technology is discussed. The MCM-D technology has been well established for the interconnection of high-spee
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::916342b4e3052ca5ee4e8a5314a372c1
https://doi.org/10.1109/22.788524
https://doi.org/10.1109/22.788524
Autor:
Varghese, Nidhy P.1 (AUTHOR) paulose@bcm.edu, Altit, Gabriel2 (AUTHOR) gabriel.altit@mcgill.ca, Gubichuk, Megan M.3 (AUTHOR) mgubichuk@cmh.edu, Siddaiah, Roopa4 (AUTHOR) rsiddaiah@pennstatehealth.psu.edu
Publikováno v:
Journal of Clinical Medicine. Jun2024, Vol. 13 Issue 12, p3417. 22p.
Autor:
Nihei, Wataru1 (AUTHOR) nihei@dpc.agu.ac.jp, Kato, Ayako1 (AUTHOR) k-ayako@dpc.agu.ac.jp, Himeno, Tatsuhito2 (AUTHOR) kondou.masaki.330@mail.aichi-med-u.ac.jp, Kondo, Masaki2 (AUTHOR) hkamiya@aichi-med-u.ac.jp, Nakamura, Jiro3 (AUTHOR) nakamura.jirou.574@mail.aichi-med-u.ac.jp, Kamiya, Hideki2 (AUTHOR), Sango, Kazunori4 (AUTHOR) sango-kz@igakuken.or.jp, Kato, Koichi1 (AUTHOR) kkato@dpc.agu.ac.jp
Publikováno v:
Neurology International. Apr2024, Vol. 16 Issue 2, p370-379. 10p.
Publisher Summary This chapter focuses on the properties of moderately and heavily doped silicon (Si) and germanium (Ge); lightly doped crystals are only briefly considered in it. It discusses the work (experimental as well as theoretical) that helps
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba94b971238a1e21bc57f0f33fdfa478
https://doi.org/10.1016/s0065-2539(08)60913-0
https://doi.org/10.1016/s0065-2539(08)60913-0
Publikováno v:
19th IEEE International Conference on Micro Electro Mechanical Systems; 2006, p902-905, 4p
Publikováno v:
Microelectronic Engineering. 19:vii
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f75a890682a0e55d8e3b2edea5fd2ab
https://doi.org/10.1016/0167-9317(92)90378-5
https://doi.org/10.1016/0167-9317(92)90378-5
Autor:
S.C. Blackstone, R.P. Mertens
Publikováno v:
IEEE Journal of Solid-State Circuits. 13:893-898
The SCTL gate which promises increased speed and reduced power is discussed. It involves the use of a single lowly doped collector incorporating Schottky diodes to decode the output. A complete electrical model is formulated and compared with experim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa2c2f55462d4e6bf30fc66bb9884fd7
https://doi.org/10.1109/jssc.1978.1052065
https://doi.org/10.1109/jssc.1978.1052065
Autor:
R.P. Mertens, S.C. Blackstone
Publikováno v:
IEEE Journal of Solid-State Circuits. 12:270-275
A new I/SUP 2/L gate which promises increased packing density and increased speed is discussed. It incorporates the use of a Schottky contact as the collector of the vertical switching transistor of an I/SUP 2/L gate. Calculations and experiments sho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74c12aec27569c5b1a544cd3c95da3e3
https://doi.org/10.1109/jssc.1977.1050890
https://doi.org/10.1109/jssc.1977.1050890