Zobrazeno 1 - 10
of 30
pro vyhledávání: '"R.P. Holmstrom"'
Publikováno v:
Journal of Lightwave Technology. 19:1065-1075
The reliability performance of 128/spl times/ 128 optical cross-connects (OXCs) based on microelectrooptomechanical systems (MEOMS) switch matrices is considered. First, we compare a strictly nonblocking wavelength selective switch with a strictly no
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7cfbb1ab3c3ff92dba0e99fd1458e00d
https://doi.org/10.1109/50.939785
https://doi.org/10.1109/50.939785
Autor:
R.P. Holmstrom, E. Meland
Publikováno v:
LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96f90da75bcc5a2e8bf8e2c0684891fd
https://doi.org/10.1109/leosst.1991.639000
https://doi.org/10.1109/leosst.1991.639000
Autor:
D.W. Jenkins, R.P. Holmstrom
Publikováno v:
2001 Digest of LEOS Summer Topical Meetings: Advanced Semiconductor Lasers and Applications/Ultraviolet and Blue Lasers and Their Applications/Ultralong Haul DWDM Transmission and Networking/WDM Components (IEEE Cat. No.01TH8572).
The use of tunable lasers in a long haul network has two applications: sparing and optical networking. The justification for sparing is that the use of tunable lasers reduces the number of extra transponders (one for every wavelength) that service pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f00a74b385ef3cba9d469ad6b0dadfa0
https://doi.org/10.1109/leosst.2001.941896
https://doi.org/10.1109/leosst.2001.941896
Autor:
John Alvin Thompson, Mark A. Rothman, Craig Armiento, C.L. Shieh, A.J. Negri, J. Kaur, R.P. Holmstrom
Publikováno v:
IEEE Photonics Technology Letters. 5:169-171
An InGaAsP/InP laser monolithically integrated with a rear facet monitor and a fiber V-groove has been demonstrated for the first time. The integrated device incorporates an etched-facet laser fabricated using an in situ, multistep, reactive ion etch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f883d280a1254f8e1bc3945ef2919cb
https://doi.org/10.1109/68.195993
https://doi.org/10.1109/68.195993
Publikováno v:
Surface Science. 75:L781-L785
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5827ec87deb6c698811c38855d7e2fee
https://doi.org/10.1016/0039-6028(78)90196-6
https://doi.org/10.1016/0039-6028(78)90196-6
Publikováno v:
Surface Science. 76:L575-L579
It was found that oxygen chemisorption on ZnO surfaces is accelerated by as much as three orders of magnitude after illumination in the presence of CO + O 2 . This accelerated chemisorption is characterized by electron transfer and thermal activation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca6b3daa9b2c74e93c824f4873add0c6
https://doi.org/10.1016/0039-6028(78)90115-2
https://doi.org/10.1016/0039-6028(78)90115-2
Autor:
J.Y. Chi, R.P. Holmstrom
Publikováno v:
Solid-State Electronics. 26:667-670
A constant voltage scaling scheme is examined for the enhancement of frequency and power performance of FETs. For low electric fields, this scheme is self-consistent within Shockley's formulation and improves the overall frequency and power performan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04e27e8d84707cdb3e7892e6fb599734
https://doi.org/10.1016/0038-1101(83)90022-9
https://doi.org/10.1016/0038-1101(83)90022-9
Publikováno v:
Surface Science Letters. 100:L467-L471
Electron beam stimulated micro- and macroscopic phenomena are reported for CdS surfaces irradiated with a two keV electron beam. Microscopic effects - confined strictly to the irradiated area - were observed in the presence of water vapor of a partia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::708bb7736d06a93b4b457f9863a15ab0
https://doi.org/10.1016/0167-2584(80)90169-3
https://doi.org/10.1016/0167-2584(80)90169-3
Publikováno v:
IEEE Electron Device Letters. 7:410-412
A gate probe method has been developed to accurately determine source, drain, and channel resistances of MESFET's. The method employs the gate current crowding phenomenon at higher drain currents. An exact equation was derived for the resistances who
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b056fd11f2dbdfc519c76d43b53ceed
https://doi.org/10.1109/edl.1986.26419
https://doi.org/10.1109/edl.1986.26419
Publikováno v:
IEEE Electron Device Letters. 5:476-478
A method based on monitoring the thermally stimulated drain conductance (TSDC) under trap filling and emptying bias-temperature sequences is developed for directly characterizing high defect density AlGaAs layers in high electron mobility transistors
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79fe6f7e7429e11244ba1b71f0718df7
https://doi.org/10.1109/edl.1984.25994
https://doi.org/10.1109/edl.1984.25994