Zobrazeno 1 - 10
of 113
pro vyhledávání: '"R.N. Nottenburg"'
Publikováno v:
IEEE Journal of Solid-State Circuits. 34:205-211
This paper introduces a modification of the feedback emitter-coupled logic (FECL) gate that makes it suitable for Gb/s applications. The circuit can be used as a single-ended-to-differential signal converter without the need for an external reference
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52bbf4b381a2cef3a6aceda40ec55d7c
https://doi.org/10.1109/4.743775
https://doi.org/10.1109/4.743775
Autor:
A.F.J. Levi, Vinodkumar Ramakrishnan, R.N. Nottenburg, M. Govindarajan, R. Kinter, S. Siala, Y. Dekovic, J. Padilla
Publikováno v:
IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part B. 19:548-553
Given the high data rates (>500 Mb/s) achievable in optical links using current device technologies, low cost packaging of transmitters and receivers plays a key role in rendering them viable for short-haul data communication networks. The authors re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffe37b597724f23591b5a7029782f4a0
https://doi.org/10.1109/96.533894
https://doi.org/10.1109/96.533894
Publikováno v:
IEEE Photonics Technology Letters. 5:1397-1400
A multichannel optical receiver with an In/sub 0.53/Ga/sub 0.47/As p-i-n photodetector array and a monolithic transimpedance amplifier array fabricated in AlGaAs/GaAs HBT (heterojunction bipolar transistor) technology were demonstrated. Both flip-chi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ffbfb1da164e2cfeaf6c9d670aead7a
https://doi.org/10.1109/68.262553
https://doi.org/10.1109/68.262553
Autor:
James J. Elliot, Hanmin Zhao, Newton C. Frateschi, R.N. Nottenburg, P.D. Dapkus, S. Siala, M. Govindarajan
Publikováno v:
IEEE Photonics Technology Letters. 5:275-278
Strained InGaAs/GaAs quantum-well three-terminal lasers with monolithically integrated intracavity modulators were fabricated using low threshold current structures formed by the temperature engineered growth (TEG) technique. An on-off switching rati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::189e07dedff86e89cb00218124df8877
https://doi.org/10.1109/68.205610
https://doi.org/10.1109/68.205610
Autor:
P. W. Wisk, T. R. Fullowan, Cammy R. Abernathy, Fan Ren, P.R. Smith, R.N. Nottenburg, R.K. Montgomery, Stephen J. Pearton, J. R. Lothian
Publikováno v:
Journal of Crystal Growth. 120:234-239
In this paper, we will discuss how the unique growth chemistry of MOMBE can be used to produce high speed GaAs/AlGaAs heterojunction bipolar transistors (HBTs). The ability to grow heavily doped, well-confined layers with carbon doping from trimethyl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9bca3b2c120a8578f273da2702eda834
https://doi.org/10.1016/0022-0248(92)90396-z
https://doi.org/10.1016/0022-0248(92)90396-z
Publikováno v:
IEEE Photonics Technology Letters. 9:82-84
A DC-coupled 4-channel synchronous optical receiver with 8-Gb/s aggregate throughput has been designed using a monolithic silicon bipolar IC and an InGaAs p-i-n photodiode array. Each channel employs a positive feedback structure to dynamically gener
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c200777738701083f25c604bdfb4038
https://doi.org/10.1109/68.554508
https://doi.org/10.1109/68.554508
Publikováno v:
51st Annual Device Research Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2225d8c74ad6a2389f4bc7d3b5462444
https://doi.org/10.1109/drc.1993.1009592
https://doi.org/10.1109/drc.1993.1009592
Publikováno v:
Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83a5e2eccd4e021f7c3c2606f4af7937
https://doi.org/10.1109/leosst.1994.700437
https://doi.org/10.1109/leosst.1994.700437
Publikováno v:
Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13931964a6c9ac1199f3eac9a6c0efef
https://doi.org/10.1109/leosst.1994.700422
https://doi.org/10.1109/leosst.1994.700422
Publikováno v:
IEEE Photonics Technology Letters. 8:685-687
A monolithic broad-band dc-coupled Silicon bipolar optical transducer has been designed to receive and retime uncoded data at rates up to 2.5 Gb/s. The transducer employs a modified feedback emitter coupled logic (FECL) loop to dynamically set refere
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1487ce29fb1611afc2a93c05ae340ee
https://doi.org/10.1109/68.491595
https://doi.org/10.1109/68.491595