Zobrazeno 1 - 10
of 126
pro vyhledávání: '"R.N Kyutt"'
Autor:
R.N. Kyutt, M. P. Shcheglov
Publikováno v:
Technical Physics Letters. 44:548-550
X-ray diffraction (XRD) in asymmetric Bragg geometry was measured and XRD intensity distribution maps in the reciprocal space were constructed for GaN epitaxial layers with various degrees of structural perfection grown on c-sapphire substrates. It i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1886cb81ed1652a52c691b16634fda36
https://doi.org/10.1134/s106378501806024x
https://doi.org/10.1134/s106378501806024x
Publikováno v:
Solid State Phenomena. :573-578
Structural and luminescence properties have been studied in silicon layers with dislocation-related luminescence. Multiple room temperature implantation of oxygen ions with doses low than the amorphization threshold was carried out. Silicon ions with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::340e012891e0e661f42e690fcc9ddb92
https://doi.org/10.4028/www.scientific.net/ssp.156-158.573
https://doi.org/10.4028/www.scientific.net/ssp.156-158.573
Autor:
C. Norris, Simon G. Alcock, Paul B. Howes, Chris Nicklin, N. S. Sokolov, R.N. Kyutt, N.L. Yakovlev
Publikováno v:
Applied Surface Science. 253:3991-3999
X-ray reflectivity and non-specular crystal truncation rod scans have been used to determine the three-dimensional atomic structure of the buried CaF2–Si(1 1 1) interface and ultrathin films of MnF2 and CaF2 within a superlattice. We show that ultr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aed829ed8293dc5ce9147cf7b985799c
https://doi.org/10.1016/j.apsusc.2006.08.040
https://doi.org/10.1016/j.apsusc.2006.08.040
Autor:
O. Nur, M.Y.A. Yousif, C.J. Patel, Magnus Willander, Daniel Bensahel, R.N Kyutt, Caroline Hernandez, Yves Campidelli
Publikováno v:
Solid-State Electronics. 45:1869-1874
The strain-sensitive X-ray two-dimensional reciprocal space mapping diffractrometry (2D-RSM) is employed to investigate the relaxation parameters and defect propagation in various thin relaxed buffer layers (RBLs) having a pure Ge top. In addition, w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6ca44d5ecbd5fb9b00c31f5a1b38213
https://doi.org/10.1016/s0038-1101(01)00225-8
https://doi.org/10.1016/s0038-1101(01)00225-8
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 173:319-325
Erbium-doped layers have been produced on 〈1 1 1〉 -oriented silicon wafers using high-energy amorphizing Er implants and solid phase epitaxy (SPE). Transmission electron microscopy (TEM) and X-ray diffraction (XRD) techniques, used to study the m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b66666db7e640be243ab890aee7aa04
https://doi.org/10.1016/s0168-583x(00)00403-1
https://doi.org/10.1016/s0168-583x(00)00403-1
Autor:
Dagmar Gerthsen, A. E. Zhukov, E. Schomburg, S. Brandl, A. Yu. Egorov, Karl Friedrich Renk, B. V. Volovik, Zh. I. Alferov, R.N Kyutt, N. N. Ledentsov, Dimitri Litvinov, A. R. Kovsh, Yu. Koschurinov, P. S. Kop’ev, D.G. Pavel'ev, Andreas Rosenauer, V. M. Ustinov
Publikováno v:
Physics Letters A. 262:396-401
We report on the observation of miniband transport in a GaAs/AlAs superlattice with submonolayer AlAs barriers. An X-ray analysis indicated the superlattice periodicity, and a composition analysis by a high-resolution transmission electron microscopy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92ef49deca297b01c44d9552b923f3de
https://doi.org/10.1016/s0375-9601(99)00612-x
https://doi.org/10.1016/s0375-9601(99)00612-x
Publikováno v:
Solid State Phenomena. :371-376
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87e81f839c58fc3f5cbfa2437a423575
https://doi.org/10.4028/www.scientific.net/ssp.69-70.371
https://doi.org/10.4028/www.scientific.net/ssp.69-70.371
Autor:
M. M. Moisseeva, L. J. Schowalter, Yu.V. Shusterman, R.N. Kyutt, A. K. Kaveev, N.L. Yakovlev, Sergey M. Suturin, N. S. Sokolov
Publikováno v:
Journal of Crystal Growth. :1105-1108
Cadmium fluoride epitaxial layers have been grown on CaF 2 (111) substrates at different temperatures. The surface morphology of the grown films was studied by atomic force microscopy and was found to change drastically from pyramid shape mounds at l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c9a48cf663ef0243163b8d56ef6a826
https://doi.org/10.1016/s0022-0248(98)01536-x
https://doi.org/10.1016/s0022-0248(98)01536-x
Publikováno v:
Applied Surface Science. :595-598
Symmetric short period CdF2 CaF2 superlattices (SLs) on Si(111) were grown by molecular beam epitaxy. Their structural perfection was studied by X-ray diffraction. Calculations of strains from measured rocking curves and subsequent simulations of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8bcf0d351251093b695ebd11e93a2e85
https://doi.org/10.1016/s0169-4332(97)00575-8
https://doi.org/10.1016/s0169-4332(97)00575-8
Autor:
I. T. Serenkov, Elena I. Shek, M.I. Makovijchuk, E.O. Parshin, V. I. Sakharov, Nikolai A. Sobolev, K.F. Shtel'makh, Yu. A. Kudryavtsev, Yu. A. Nikolaev, R.N. Kyutt, A. M. Emel’yanov
Publikováno v:
Solid State Phenomena. :257-262
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33781bddd61e37ab761803c44a8f65da
https://doi.org/10.4028/www.scientific.net/ssp.57-58.257
https://doi.org/10.4028/www.scientific.net/ssp.57-58.257