Zobrazeno 1 - 10
of 56
pro vyhledávání: '"R.M. Diestelhorst"'
Autor:
Prabir Saha, John D. Cressler, Troy D. England, Pauline Paki-Amouzou, Nelson E. Lourenco, Zachary E. Fleetwood, En Xia Zhang, R.M. Diestelhorst, Adilson S. Cardoso, Cher Xuan Zhang, Duane C. Howard, Subramaniam Shankar
Publikováno v:
IEEE Transactions on Nuclear Science. 61:3226-3235
An 8-18 GHz receiver implemented in silicon-germanium (SiGe) BiCMOS technology is presented. The receiver is designed to enable built-in test (BIT) and consists of a low noise amplifier (LNA), an image-reject mixer, on-chip, automatic gain control (A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::104c061f81e28c067367ef1e79acfdf4
https://doi.org/10.1109/tns.2014.2364580
https://doi.org/10.1109/tns.2014.2364580
Autor:
Steven Finn, Troy D. England, John D. Cressler, Eleazar Walter Kenyon, Laleh Najafizadeh, S.D. Phillips, Nelson E. Lourenco, R.M. Diestelhorst, Chandim Chatterjee
Publikováno v:
IEEE Aerospace and Electronic Systems Magazine. 29:32-41
Electronics in space-based systems are in the process of a paradigm shift moving from centralized, heavily shielded, temperature-controlled warm boxes to distributed, minimally shielded sensing and control nodes. SiGe BiCMOS technology is one of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fad6f7c7e3bf1e1678c8c68621ae2a1
https://doi.org/10.1109/maes.2014.6805364
https://doi.org/10.1109/maes.2014.6805364
Autor:
Troy D. England, John D. Cressler, Duane C. Howard, R.M. Diestelhorst, Prabir Saha, Nelson E. Lourenco, Eleazar Walter Kenyon, Subramaniam Shankar
Publikováno v:
IEEE Transactions on Nuclear Science. 59:2837-2846
We present a wideband, low noise amplifier (LNA) implemented in a Silicon-Germanium Heterojunction Bipolar Transistor (SiGe HBT) technology. This SiGe LNA covers a frequency range of 8-16 GHz and achieves a peak gain of 17.5 dB at nominal bias and a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bfb465eea64f8d457bffc9e5bf7bd62
https://doi.org/10.1109/tns.2012.2224132
https://doi.org/10.1109/tns.2012.2224132
Autor:
Duane C. Howard, Subramaniam Shankar, Prabir Saha, R.M. Diestelhorst, Troy D. England, John D. Cressler
Publikováno v:
IEEE Journal of Solid-State Circuits. 47:1998-2006
A wideband (6-20 GHz) Silicon-Germanium (SiGe) adaptive image-reject mixer with an intermediate frequency (IF) of 1.8 GHz is presented. The mixer can be “self-healed” to deliver consistent performance by nullifying the effects of process variatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61df6277d2651873b637b390bd679a90
https://doi.org/10.1109/jssc.2012.2201284
https://doi.org/10.1109/jssc.2012.2201284
Autor:
M. Barlow, Benjamin J. Blalock, Robert A. Reed, C. Eckert, Charles D. Ellis, Fa Foster Dai, M. Mojarradi, Alan Mantooth, L. Peltz, V. Ramachandran, R. Frampton, R. Garbos, Jim Holmes, Michael L. Alles, R.M. Diestelhorst, Patrick McCluskey, Troy D. England, Richard W. Berger, Eleazar Walter Kenyon, Wayne Johnson, John D. Cressler, C. Webber
Publikováno v:
IEEE Aerospace and Electronic Systems Magazine. 27:29-41
We have presented the architecture, simulation, packaging, and over-temperature and radiation testing of a complex, 16-channel, extreme environment capable, SiGe Remote Electronics Unit containing the Remote Sensor Interface ASIC that can serve a wid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa263e57cb6dd0ef7cf2f6e74429dac1
https://doi.org/10.1109/maes.2012.6328839
https://doi.org/10.1109/maes.2012.6328839
Autor:
M. Mojarradi, Troy D. England, R. Frampton, Jim Holmes, Richard W. Berger, Fa Foster Dai, Michael L. Alles, John D. Cressler, Xueyang Geng, R. Garbos, Patrick McCluskey, L. Peltz, Chandradevi Ulaganathan, Robert A. Reed, Alan Mantooth, C. Eckert, Wayne Johnson, R.M. Diestelhorst, Benjamin J. Blalock, K. Cornett
Publikováno v:
IEEE Aerospace and Electronic Systems Magazine. 27:25-34
We have described the modeling, circuit design, system integration, and measurement of a Remote Sensor Interface (Figure 20) that took place over a span of 5 years and 8 fabrication cycles. It was conceived as part of the Multi-Chip Module (MCM) show
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71b418a76085db7d5c8ff8721a3f657c
https://doi.org/10.1109/maes.2012.6328550
https://doi.org/10.1109/maes.2012.6328550
Autor:
Jonathan A. Pellish, Gyorgy Vizkelethy, Robert A. Reed, Bernd Heinemann, Paul W. Marshall, A. Appaswamy, Akil K. Sutton, Dieter Knoll, John D. Cressler, G.G. Fischer, S.D. Phillips, Bernd Tillack, Hans Gustat, R.M. Diestelhorst
Publikováno v:
IEEE Transactions on Nuclear Science. 56:3402-3407
We investigate a novel implementation of junction isolation to harden a 200 GHz SiGe:C HBT technology without deep trench isolation against single event effects. The inclusion of isolation is shown to have no effect on the dc or ac performance of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef15e0bce5af5b19415d0e38d064f9d2
https://doi.org/10.1109/tns.2009.2030801
https://doi.org/10.1109/tns.2009.2030801
Autor:
Paul W. Marshall, Dale McMorrow, Ashok Raman, P. Paillet, Gyorgy Vizkelethy, Kurt A. Moen, S.D. Phillips, Ronald D. Schrimpf, Michael L. Alles, R.M. Diestelhorst, Paul E. Dodd, Marek Turowski, J. Baggio, John D. Cressler, Ken LaBel, Olivier Duhamel, Jonathan A. Pellish, Akil K. Sutton, V.F. Cavrois, Robert A. Reed
Publikováno v:
IEEE Transactions on Nuclear Science. 56:3078-3084
Silicon-germanium heterojunction bipolar transistor (SiGe HBT) heavy ion-induced current transients are measured using Sandia National Laboratories' microbeam and high- and low-energy broadbeam sources at the Grand Acce?le?rateur National d'Ions Lour
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc3f42b014663482bfc6861c56da1c54
https://doi.org/10.1109/tns.2009.2034158
https://doi.org/10.1109/tns.2009.2034158
Autor:
Prabir Saha, Paul W. Marshall, Marco Bellini, Ashok Raman, Kurt A. Moen, Laleh Najafizadeh, Gyorgy Vizkelethy, John D. Cressler, R.M. Diestelhorst, S.D. Phillips, Marek Turowski
Publikováno v:
IEEE Transactions on Nuclear Science. 56:3469-3476
We investigate the single-event transient (SET) response of bandgap voltage references (BGRs) implemented in SiGe BiCMOS technology through heavy ion microbeam experiments. The SiGe BGR circuit is used to provide the input reference voltage to a volt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8a02fc99377e94d4a3a5172c5424558
https://doi.org/10.1109/tns.2009.2034159
https://doi.org/10.1109/tns.2009.2034159
Autor:
G. Espinel, Akil K. Sutton, M. Varadharajaperumal, G. Vizkelethy, Michael L. Alles, R. Krithivasan, R.M. Diestelhorst, John D. Cressler, Guofu Niu, Robert A. Weller, Ronald D. Schrimpf, J. A. Pellish, Robert A. Reed, J.P. Comeau, Paul W. Marshall, E.J. Montes
Publikováno v:
IEEE Transactions on Nuclear Science. 55:1581-1586
Microbeam measurements and TCAD simulations are used to examine the effects of ion angle of incidence on the charge collected from events occurring in a Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT). The results identify the geomet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdbe5f5f8fa9a377f251e2210337ae65
https://doi.org/10.1109/tns.2007.893920
https://doi.org/10.1109/tns.2007.893920