Zobrazeno 1 - 10
of 54
pro vyhledávání: '"R.L. Lane"'
Autor:
Brenda M. Button, Dominic Keating, M.D. Corbett, R. Stirling, B.J. Tarrant, L. Wilson, R.L. Lane, John W Wilson, A. Young
Publikováno v:
Journal of Cystic Fibrosis. 17:S49
Akademický článek
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Autor:
Bruce W. Smith, Shahid A. Butt, Santosh K. Kurinec, R.L. Lane, Zulfiqar Alam, Graham G. Arthur
Publikováno v:
Microelectronic Engineering. 35:201-204
Results are presented from investigations into the UV properties of various oxide, nitride, and intermetallic materials for application as attenuated phase shift masking films for 248 and 193 nm wavelengths. There are several materials which are pote
Autor:
J. Tierney, Santosh K. Kurinec, M. Wiegand, R.L. Lane, R.E. Pearson, S. Widlund, Karl D. Hirschman, Lynn Fuller, Sean L. Rommel, S.P. Blondell, M.A. Jackson, Bruce W. Smith, Dale E. Ewbank, M. Arquette, C. Gruener
Publikováno v:
2006 16th Biennial University/Government/Industry Microelectronics Symposium.
Rochester Institute of Technology started the nation's first Bachelor of Science program in Microelectronic Engineering in 1982. The program has kept pace with the rapid advancements in semiconductor technology, sharing 25 of the 40 years characteriz
Autor:
R.E. Pearson, Lynn Fuller, M.A. Jackson, I.R. Turkman, Bruce W. Smith, S.K. Kurinec, R.L. Lane
Publikováno v:
Proceedings. IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop.
Akademický článek
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Publikováno v:
Proceedings., Eighth University/Government/Industry Microelectronics Symposium.
Several new processing capabilities have recently been commissioned in the RIT (Rochester Institute of Technology) microelectronic engineering laboratory. These include: (1) ion implantation; (2) LPCVD (low-pressure chemical vapor deposition) polysil
Autor:
Santosh K. Kurinec, R.E. Pearson, S.P. Blondell, Lynn Fuller, I.R. Turkham, Bruce W. Smith, G.A. Runkle, R.L. Lane, K.H. Hesler
Publikováno v:
Proceedings., Eighth University/Government/Industry Microelectronics Symposium.
The authors describe the systems that have been established for the operation of the microelectronics facility at the Rochester Institute of Technology. Attention is given to the organizational structure; support facilities; cleanroom maintenance; la
Autor:
Santosh K. Kurinec, I.R. Turkman, Bruce W. Smith, R.L. Lane, K.H. Hesler, R.E. Pearson, Lynn Fuller
Publikováno v:
Proceedings., Eighth University/Government/Industry Microelectronics Symposium.
Rochester Institute of Technology, College of Engineering, has established a new master of engineering degree program in microelectronics manufacturing engineering. The program is one year (four quarters) in duration and is designed for BS graduates
Autor:
Santosh K. Kurinec, M.A. Jackson, I.R. Turkman, Bruce W. Smith, R.E. Pearson, Lynn Fuller, R.L. Lane
Publikováno v:
[1993] Proceedings of the Tenth Biennial University/Government/Industry Microelectronics Symposium.
The microelectronic engineering program at Rochester Institute of Technology (RIT) is the only ABET accredited B.S. Microelectronic Engineering program in the United States. The program requires co-op, making it five years in length. Co-op students a