Zobrazeno 1 - 10
of 513
pro vyhledávání: '"R.L. Henry"'
Autor:
R.L. Henry Disney, Antti Haarto
Publikováno v:
Entomologist's Monthly Magazine. 159:29-32
A new species of phorid fly in the genus Megaselia, collected by Malaise trap in southwestern Finland, is described.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7be11a643f2bd240251e9e19d7bf034
https://doi.org/10.31184/m00138908.1591.4166
https://doi.org/10.31184/m00138908.1591.4166
Autor:
Nabil Bassim, R.L. Henry, M. Fatemi, D. K. Gaskill, C. R. Eddy, Mark Twigg, Michael A. Mastro, James C. Culbertson, Ronald T. Holm
High-reflectance group III-nitride distributed Bragg reflectors (DBRs) were deposited by MOCVD on Si (111) substrates. A reflectance greater than 96% was demonstrated for the first time for an AlN/GaN DBR with a stop-band centered in the blue-green r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ca70bec0a5f5d50df22150ed474db4e9
http://arxiv.org/abs/2009.01207
http://arxiv.org/abs/2009.01207
Autor:
Charles R. Eddy, Nabil Bassim, Mark E. Twigg, Ron T. Holm, D. K. Gaskill, R.L. Henry, Michael A. Mastro
Distributed Bragg reflectors (DBRs) composed of an AlN/AlGaN superlattice were grown of Si (111) substrates. The first high-reflectance III-nitride DBR on Si was achieved by growing the DBR directly on the Si substrate to enhance the overall reflecta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1ac64a319fb95d027e00c72a51d459d6
http://arxiv.org/abs/2009.01635
http://arxiv.org/abs/2009.01635
Autor:
Michael A. Mastro, Charles R. Eddy, Nabil Bassim, Mark E. Twigg, A. Rosenberg, Ron T. Holm, R.L. Henry
Distributed Bragg reflectors (DBRs) composed of an AlN/GaN superlattice were demonstrated for the first time on Si (100) substrates. Single-crystal wurtzite superlattice structures were achieved on this cubic substrate by employing offcut Si (100) wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fb60bc53830accf62a439c16bb4eac60
Akademický článek
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Autor:
Keith L. Hohn, Michael A. Mastro, Chundi Cao, Charles R. Eddy, James H. Edgar, Feng Li, R.L. Henry, Sarah M. Forman, Takashi Ito, Ronald T. Holm
Publikováno v:
Langmuir. 24:6630-6635
In this paper we describe the formation and characterization of self-assembled monolayers of octadecylphosphonic acid (ODPA) on epitaxial (0001) GaN films on sapphire. By immersing the substrate in its toluene solution, ODPA strongly adsorbed onto UV
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c83db9ea30bee8caee3ebe45a2d9ff6b
https://doi.org/10.1021/la800716r
https://doi.org/10.1021/la800716r
Autor:
Charles R. Eddy, R.L. Henry, Nabil Bassim, Joshua D. Caldwell, Ronald T. Holm, Michael A. Mastro
Publikováno v:
ECS Transactions. 11:9-15
This letter presents a technique to enhance the light extraction from a III-nitride light emitting diode on a Si substrate by inserting a high-reflectance distributed Bragg reflector below the active layer of the device to reflect the emitted light a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f42982331dbaa99ec63f22fef1de30b4
https://doi.org/10.1149/1.2783851
https://doi.org/10.1149/1.2783851
Autor:
Sarah M. Forman, Chundi Cao, Charles R. Eddy, Keith L. Hohn, James H. Edgar, Ronald T. Holm, R.L. Henry, Takashi Ito, Michael A. Mastro
Publikováno v:
ECS Transactions. 11:97-101
This paper describes monolayer formation of octadecylphosphonic acid (ODPA) on GaN surfaces via self-assembly. Adsorption of a series of primarily substituted hydrocarbons (RX; -X = -OH, -NH2, -COOH, -SH, -PO(OH)2) from their toluene solutions was sy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4173f1488b7a24ea90a32c4b09d0b7da
https://doi.org/10.1149/1.2783862
https://doi.org/10.1149/1.2783862
Autor:
Michael A. Mastro, Orest J. Glembocki, Sachidananda Babu, Mark E. Twigg, Yves Ngu, Charles R. Eddy, James C. Culbertson, Ronald T. Holm, Feng Yan, J. Anthony Powell, Joshua D. Caldwell, Andrew J. Trunek, R.L. Henry, Martin Peckerar, Nabil Bassim, P. G. Neudeck
Publikováno v:
ECS Transactions. 3:117-125
Two approaches to achieving reduced-defect active regions in III-N devices are discussed - confined epitaxy and heteroepitaxy on step-free SiC surfaces. In confined epitaxy, sapphire substrates (either GaN coated or not) are patterned with a dielectr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::491307e7f0103fb43713877863fb9af2
https://doi.org/10.1149/1.2357202
https://doi.org/10.1149/1.2357202
Autor:
Ronald T. Holm, P. G. Neudeck, Andrew J. Trunek, R.L. Henry, J. Anthony Powell, Nabil Bassim, Mark E. Twigg, Joshua D. Caldwell, Charles R. Eddy, Orest J. Glembocki, Michael A. Mastro, Karl D. Hobart, Marko J. Tadjer, Fritz J. Kub
Publikováno v:
ECS Transactions. 3:189-198
We report improvements in ultraviolet (380 nm) electroluminescence (EL) output of GaN pn homojunctions grown on 4H-SiC mesas with step-free surfaces of 49% on average in comparison to their stepped counterparts. The GaN on step-free 4H-SiC growth pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa3720ed9088c37ee8920a63ed1c7d69
https://doi.org/10.1149/1.2357208
https://doi.org/10.1149/1.2357208