Zobrazeno 1 - 10
of 217
pro vyhledávání: '"R.L. Aggarwal"'
Autor:
K. A. McIntosh, I. Melngailis, L.J. Mahoney, K.M. Molvar, Simon Verghese, E.K. Duerr, R.L. Aggarwal, Richard J. Molnar, Michael W. Geis
Publikováno v:
IEEE Transactions on Electron Devices. 48:502-511
For solar-blind ultraviolet detection, AlGaN avalanche photodiodes (APDs) that operate in Geiger mode can outperform conventional AlGaN photodiodes in sensitivity and should compare favorably to photomultiplier tubes. Toward this goal, we report GaN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45752eae4d736bf11ff837fc8b341dd1
https://doi.org/10.1109/16.906443
https://doi.org/10.1109/16.906443
Autor:
O.W. Shih, R.L. Aggarwal, Y. Shapira, S.H. Bloom, V. Bindilatti, R. Kershaw, K. Dwight, A. Wold
Publikováno v:
Solid State Communications. 74:455-459
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43404ccf9350171bb00753b8cf1dc988
https://doi.org/10.1016/0038-1098(90)90326-7
https://doi.org/10.1016/0038-1098(90)90326-7
Publikováno v:
The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003..
Laser beam combining technologies are of current interest for scaling lasers to high average output power while maintaining single-spatial-mode beam profiles. In order to achieve higher output powers we have extended the WBC concept to a master-oscil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::408a91e114a3da2b2274f878cd19a8a2
https://doi.org/10.1109/leos.2003.1253077
https://doi.org/10.1109/leos.2003.1253077
Autor:
K. A. McIntosh, R.L. Aggarwal, C.-L. Chen, I. Melngailis, Simon Verghese, K.M. Molvar, Richard J. Molnar
Publikováno v:
56th Annual Device Research Conference Digest (Cat. No.98TH8373).
Visible-blind UV sensors for applications that require both wide bandwidth and high sensitivity will benefit from avalanche photodiodes (APDs) that have an internal gain mechanism. This paper reports the first clear observation of avalanche multiplic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8148514a02cdb5504055c1256b717f5a
https://doi.org/10.1109/drc.1998.731118
https://doi.org/10.1109/drc.1998.731118
Autor:
Simon Verghese, M.K. Connors, Richard J. Molnar, R.L. Aggarwal, K. A. McIntosh, L.J. Mahoney, I. Melngailis, K.M. Molvar
Publikováno v:
58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526).
Recent demonstrations of GaN APDs with spatially uniform gain regions free of microplasmas reported multiplication gain (M) values of 10-25 (McIntosh et al, 1999; Carrano et al., 2000). We report here on photon counting, or Geiger-mode, measurements
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba5f09c8cef0a5e17bdb21d0be1eadb2
https://doi.org/10.1109/drc.2000.877134
https://doi.org/10.1109/drc.2000.877134
Autor:
Antonio Sanchez, Anish K. Goyal, C.C. Cook, V. Daneu, Tso Yee Fan, Scott Buchter, R.L. Aggarwal
Publikováno v:
2000 IEEE Aerospace Conference. Proceedings (Cat. No.00TH8484).
An attractive approach for building high-power laser systems is to use laser arrays with many lower power array elements. In order to achieve high brightness from these laser arrays, beam combining techniques must be employed. We are developing a bea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4ab5cd0d296cab2626585c9ad61a4a2
https://doi.org/10.1109/aero.2000.879830
https://doi.org/10.1109/aero.2000.879830
Publikováno v:
IEEE Photonics Technology Letters. 3:857-859
Strained layer AlInGaAs-AlGaAs graded-index separate-confinement heterostructure single-quantum-well diode lasers with cavity width and length of 500 and 1000 mu m, respectively, have been operated continuous-wave (CW) at heatsink temperatures up to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b34bfeac16afaf4e4b65ab174b9dd19
https://doi.org/10.1109/68.93240
https://doi.org/10.1109/68.93240
Autor:
P. A. Maki, R.L. Aggarwal, W. Götz, I. Melngailis, Richard J. Molnar, Linda T. Romano, N. M. Johnson, Elliott R. Brown, Z. L. Liau
Publikováno v:
MRS Proceedings. 423
Gallium nitride (GaN) thick films (to 150 μm) have been deposited by hydride vapor phase epitaxy (HVPE). These films are unintentionally doped n-type (n = 1–2 × 1017 cm−3 at 300 K) and exhibit structural and electronic properties which are comp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1048d1f21ebcf816f1a89d2643dc58e1
https://doi.org/10.1557/proc-423-221
https://doi.org/10.1557/proc-423-221
Publikováno v:
MRS Proceedings. 395
We have observed laser emission with well-defined cavity modes in optically pumped GaN-Al0.1Ga0.9N double-heterostructure (DH) lasers. The laser structures were grown using an electron-cyclotron-resonance nitrogen-discharge source and gas-source mole
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36091f92cab54c10bbfc1ec0abb1f231
https://doi.org/10.1557/proc-395-919
https://doi.org/10.1557/proc-395-919
Autor:
Richard J. Molnar, W. Götz, Elliott R. Brown, Linda T. Romano, R.L. Aggarwal, N. M. Johnson, Z. L. Liau, I. Melngailis
Publikováno v:
MRS Proceedings. 395
Gallium nitride (GaN) films have been grown by hydride vapor phase epitaxy (HVPE) in a vertical reactor design. We report on GaN growth directly on sapphire using a GaCl surface pretreatment. The electrical properties of these films compare favorably
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c69f71eab8bd7061b1d4a3f3ad5b0ce2
https://doi.org/10.1557/proc-395-189
https://doi.org/10.1557/proc-395-189