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Autor:
V. Bhattacharya, Sanjeev K. Singh, Shripad B. Deshpande, R.K. Watts, Sunish Goyal, G. Raveendra Reddy
Publikováno v:
British journal of plastic surgery. 58(6)
The aim of this study is to find out the correlation between the internal diameter of perforators to the deep fascia with their perfusion pressure. This is an important step towards understanding howmuch tissue is supplied by a perforator. In clinica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2519cecda3605caa56e184979afbfcf0
https://pubmed.ncbi.nlm.nih.gov/16040015
https://pubmed.ncbi.nlm.nih.gov/16040015
Autor:
E.H. Westerwick, K. Early, D.M. Tennant, K.F. Lee, P. Mulgrew, M.R. Pinto, R.K. Watts, Abbas Ourmazd, R.G. Swartz, D.Y. Jeon, B.G. Park, William M. Mansfield, Conor S. Rafferty, Jeffrey Bokor, Y.O. Kim, Ran-Hong Yan, A.M. Voshchenkov, G.M. Chin, M.D. Morris
Publikováno v:
1992 Symposium on VLSI Technology Digest of Technical Papers.
The design and implementation of 0.15- mu m-channel N-MOSFETs with very high current drive and good short channel behavior at room temperature are discussed. Measured subthreshold characteristics show a slope of 84 mV/dec and a shift for 75 mV for De
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6040d7e84b8eedda2b5fa1f2106eefc7
https://doi.org/10.1109/vlsit.1992.200661
https://doi.org/10.1109/vlsit.1992.200661
Publikováno v:
ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics.
The complex oxide dielectric Ba/sub 1-x/Sr/sub x/TiO/sub 3/ (BST) has recently been studied intensively for DRAM applications. Another significant nearer term application for which BST may be suited is replacement of discrete capacitors now attached
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::915e0dd20fd7657afee207e7e223ec58
https://doi.org/10.1109/isaf.1996.602718
https://doi.org/10.1109/isaf.1996.602718
Autor:
R.K. Watts, J.T.C. Lee
Publikováno v:
IEEE Electron Device Letters. 14:515-517
Small thin-film polysilicon transistors are of interest for load devices in static random-access memory (SRAM) cells of the near future. We present measured characteristics of thin-film transistors (TFT's) with gate lengths ranging from 7 to 0.12 mu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5a19b3ef9420a3e9cb9e77c49b98c5c
https://doi.org/10.1109/55.258000
https://doi.org/10.1109/55.258000
Autor:
W.M. Mansfield, B.G. Park, R.K. Watts, M.R. Pinto, P. P. Mulgrew, E.H. Westerwick, GM Chin, C. S. Rafferty, D.M. Tennant, K.F. Lee, Jeffrey Bokor, Y.O. Kim, A.M. Voshchenkov, Ran-Hong Yan, M.D. Morris, K. Early, A. Ourmazd, RG Swartz, D.Y. Jeon
Publikováno v:
IEEE Electron Device Letters. 13:256-258
The authors report the implementation of deep-submicrometer Si MOSFETs that at room temperature have a unity-current-gain cutoff frequency (f/sub T/) of 89 GHz, for a drain-to-source bias of 1.5 V, a gate-to-source bias of 1 V, a gate oxide thickness
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3639cceb3ce67998bdc20096072e4f8d
https://doi.org/10.1109/55.145045
https://doi.org/10.1109/55.145045
Publikováno v:
Nuclear Instruments and Methods. 172:321-326
Chemicals which attack single crystals of silicon in some directions much more rapidly than other directions are called orientation-dependent etchants (ODE). Potential uses of silicon structures produced by such etching in X-ray and ultraviolet spect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::606d94319ac3a053b8577cb5382180ee
https://doi.org/10.1016/0029-554x(80)90654-0
https://doi.org/10.1016/0029-554x(80)90654-0
Publikováno v:
IEEE Transactions on Electron Devices. 28:1338-1345
Electron-beam lithography with a novel multilevel resist structure together with two-dimensional process and device modeling and dry processing with reactive sputter etching have been employed to produce silicon-gate NMOS devices with micrometer and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ba4ab3f7fd167935ff0eed1fb791274
https://doi.org/10.1109/t-ed.1981.20611
https://doi.org/10.1109/t-ed.1981.20611
Publikováno v:
Journal of Crystal Growth. 6:97-100
Single crystals of ZnSe have been grown by the gradient freeze technique from a stoichiometric melt in a sealed hot-walled system. This allows the incorporation of dopants of high vapor pressure and maintainance of stoichiometry. Samples are subseque
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d864a7064dd58fcc65ab3b286f8f3aa1
https://doi.org/10.1016/0022-0248(69)90099-2
https://doi.org/10.1016/0022-0248(69)90099-2
Autor:
R.K. Watts
Publikováno v:
Solid State Communications. 4:549-552
The electron paramagnetic resonance of Er 3+ and Yb 3+ has been studied in several II–VI compounds. The Er 3+ spectrum is found to be virtually independent of host crystal while the Yb 3+ parameters apparently depend rather strongly on host covalen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::997b86c26b6503854447fa8abe8e796b
https://doi.org/10.1016/0038-1098(66)90423-6
https://doi.org/10.1016/0038-1098(66)90423-6