Zobrazeno 1 - 10
of 31
pro vyhledávání: '"R.K. Surridge"'
Publikováno v:
IEEE Transactions on Electron Devices. 49:1375-1383
A technique is presented that allows the increase in maximum temperature rise due to thermal coupling in multifinger structures to be predicted for a wide range of finger lengths and spacings by reference to a single, normalized characteristic. Appli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16b55d931dc1a45e416ea1f94e161481
https://doi.org/10.1109/ted.2002.801306
https://doi.org/10.1109/ted.2002.801306
Publikováno v:
Journal of Crystal Growth. 136:230-234
AlGaAs-GaAs heterojunction bipolar transistors have been fabricated with current gains > 200 for devices with emitter dimensions of 2×2 μm2. The epitaxial layers were grown using chemical beam epitaxy and were npn single heterojunction transistors
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c0952bffa15972f3c81482d462fde76
https://doi.org/10.1016/0022-0248(94)90415-4
https://doi.org/10.1016/0022-0248(94)90415-4
Publikováno v:
MTT-S International Microwave Symposium Digest.
Planar GaAs Mott mixer diodes have been made for use in novel E-plane balanced mixers at 35 and 85 GHz. Single sideband noise figures of 6 dB at 35 GHz and 7.5 dB at 85 GHz (including 1 dB I.F. contribution) have been achieved. Both devices and circu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd03496641ef43163646bb0442ba618f
https://doi.org/10.1109/mwsym.1982.1130592
https://doi.org/10.1109/mwsym.1982.1130592
Publikováno v:
IEEE MTT-S International Microwave Symposium Digest.
The authors consider an improved distributed-amplifier (DA) architecture which uses simultaneous inductance tapering and signal forward feeding to obtain additional degrees of freedom for optimization. The effects of losses on the high-frequency perf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93efe168d6e1beb3265257b2ed11f829
https://doi.org/10.1109/mwsym.1989.38900
https://doi.org/10.1109/mwsym.1989.38900
Publikováno v:
Thin Solid Films. 51:77-82
We have used Rutherford backscattering and electrical measurements to asses the efficiency of pyrolytically deposited Si 3 N 4 as an encapsulant for ion-implanted GaAs. Outdiffusion of gallium and arsenic into the Si 3 N 4 layers occurred in all case
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3a2b073c376f88de69e45e8755f569b
https://doi.org/10.1016/0040-6090(78)90214-6
https://doi.org/10.1016/0040-6090(78)90214-6
Autor:
B.J. Sealy, R.K. Surridge
Publikováno v:
Thin Solid Films. 26:L19-L22
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9fe088f5da8657196a5d0174210efaf
https://doi.org/10.1016/0040-6090(75)90157-1
https://doi.org/10.1016/0040-6090(75)90157-1
Publikováno v:
1981 11th European Microwave Conference.
Conversion losses of 5.0 dB have been achieved at 35 GHz, with SSB noise figures of 6 dB (including 1 dB IF) using coplanar Mott diodes in finline balanced mixers. [l] The variation of noise figure with local oscillator power is significantly less th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca02c562feea72bed4e9d9be32c3dbe7
https://doi.org/10.1109/euma.1981.332934
https://doi.org/10.1109/euma.1981.332934
Publisher Summary This chapter discusses the various aspects of negative electron affinity GaAsP cold cathode silicon vidicon. The development of the cathode and the subsequent success in using it in experimental TV camera tubes are presented. The p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48328be7f966b808db014a3b575ac6ee
https://doi.org/10.1016/s0065-2539(08)61496-1
https://doi.org/10.1016/s0065-2539(08)61496-1
Autor:
B.J. Sealy, R.K. Surridge
Publikováno v:
Electronics Letters. 13:233
High-energy, doubly charged selenium ions have been used to produce dopant profiles suitable for GaAs devices, such as f.e.t.s. Selenium has the advantage that beams of high purity may be formed.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79b9dab7fc46043f6a00e02609130cc2
https://doi.org/10.1049/el:19770169
https://doi.org/10.1049/el:19770169
Publikováno v:
Electronics Letters. 11:314
Enhanced donor activities have been obtained after annealing at 700°C for selenium implants into GaAs by implanting an equal dose of gallium together with the selenium. Donor concentration depth profiles, measured for both single and dual implants o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc865f98fd9434d32f432d39df4308c6
https://doi.org/10.1049/el:19750241
https://doi.org/10.1049/el:19750241