Zobrazeno 1 - 10
of 162
pro vyhledávání: '"R.K. Montgomery"'
Autor:
B. Christy, M.C. Herzig, L. Estlack, C. Salgado, J.A. Bynum, C. Cantu, R.K. Montgomery, S. Lovelace, Andrew P. Cap, K.J. Jensen, C. Delavan
Publikováno v:
Cytotherapy. 20:S40
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cda1e5ecccd1abb1026d9a8ba89d0c18
https://doi.org/10.1016/j.jcyt.2018.02.101
https://doi.org/10.1016/j.jcyt.2018.02.101
Autor:
C. Salgado, J.A. Bynum, C. Cantu, L. Estlack, R.K. Montgomery, B. Christy, M.C. Herzig, T. Chance, C. Delavan, Andrew P. Cap
Publikováno v:
Cytotherapy. 20:S40
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d834faf814dbb62191a627259faf6e00
https://doi.org/10.1016/j.jcyt.2018.02.100
https://doi.org/10.1016/j.jcyt.2018.02.100
Akademický článek
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Publikováno v:
International Journal of Pressure Vessels and Piping. 80:311-331
This paper presents finite element data for 92 reinforced butt-welded branch outlet piping junctions designed according to the ASME B31.3 process piping code, for the purpose of investigating their effectiveness in the light of data for un-reinforced
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e44006379b885196db4532ba9047013
https://doi.org/10.1016/s0308-0161(03)00049-8
https://doi.org/10.1016/s0308-0161(03)00049-8
Autor:
M.R Frei, R.K Montgomery, T.-Y Chiu, C. R. Abernathy, T. R. Fullowan, B. Tseng, Fan Ren, Stephen J. Pearton, P.R Smith, James Robert Lothian
Publikováno v:
Solid-State Electronics. 46:1301-1305
The observed initial gain degradation of AlGaAs/GaAs heterojunction bipolar transistors under current stress was investigated. The change in device characteristics is attributed to a dissociation of passivating hydrogen in the base layer during stres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b10fc8779a901196934d699d96f3332
https://doi.org/10.1016/s0038-1101(02)00079-5
https://doi.org/10.1016/s0038-1101(02)00079-5
Autor:
J. P. Kreskovsky, Cammy R. Abernathy, P.R. Smith, Rose Kopf, S.D. Mittleman, D. Lehy, T. R. Fullowan, D.A. Humphrey, Fan Ren, Stephen J. Pearton, Steven Brooke Witmer, H. L. Grubin, R.K. Montgomery
Publikováno v:
Materials Science and Engineering: B. 20:280-291
GaAs/AlGaAs and InGaAs/AlInAs Heterojunction Bipolar Transistors (HBTs) have been exposed to 60Co γ-ray doses up to 100 MRad. The d.c. current gain of GaAs/AlGaAs devices showed small increases for doses up to 75 MRad, due to a faster decrease in ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4354d3097033de588aad375eade989a3
https://doi.org/10.1016/0921-5107(93)90241-e
https://doi.org/10.1016/0921-5107(93)90241-e
Autor:
Deborah Lee Sivco, Niloy K. Dutta, P.R. Smith, Paul R. Berger, D.A. Humphrey, S. J. Wang, A.Y. Cho, R.K. Montgomery
Publikováno v:
IEEE Photonics Technology Letters. 5:63-66
An 8-element linear array of single-stage integrating front-end photoreceivers using molecular beam epitaxial (MBE) regrowth was investigated. Each element consisted of a p-i-n In/sub 0.53/Ga/sub 0.47/As photodiode integrated with a selectively regro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df079f1f9c54ebed5ec975011b5bbba2
https://doi.org/10.1109/68.185062
https://doi.org/10.1109/68.185062
Autor:
R.K. Montgomery, Niloy K. Dutta, A.Y. Cho, S. J. Wang, Paul R. Berger, Deborah Lee Sivco, P.R. Smith, D.A. Humphrey
Publikováno v:
IEEE Photonics Technology Letters. 4:891-894
A single-stage integrating front-end photoreceiver comprising a p-i-n In/sub 0.53/Ga/sub 0.47/As photodiode integrated with a selectively regrown pseudomorphic In/sub 0.65/Ga/sub 0.35/As/In/sub 0.52/Al/sub 0.48/As MODFET using MBE regrowth was invest
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec519c31e799d295b7034db4e4a1b57c
https://doi.org/10.1109/68.149899
https://doi.org/10.1109/68.149899
Autor:
P. W. Wisk, T. R. Fullowan, Cammy R. Abernathy, Fan Ren, P.R. Smith, R.N. Nottenburg, R.K. Montgomery, Stephen J. Pearton, J. R. Lothian
Publikováno v:
Journal of Crystal Growth. 120:234-239
In this paper, we will discuss how the unique growth chemistry of MOMBE can be used to produce high speed GaAs/AlGaAs heterojunction bipolar transistors (HBTs). The ability to grow heavily doped, well-confined layers with carbon doping from trimethyl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9bca3b2c120a8578f273da2702eda834
https://doi.org/10.1016/0022-0248(92)90396-z
https://doi.org/10.1016/0022-0248(92)90396-z
Publikováno v:
50th Annual Device Research Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7242b505cee0964b2d1c9ba571df366f
https://doi.org/10.1109/drc.1992.671885
https://doi.org/10.1109/drc.1992.671885