Zobrazeno 1 - 10
of 21
pro vyhledávání: '"R.K. Kaneriya"'
Publikováno v:
Microelectronics Journal. 131:105660
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5826e92e6981a6a1b5e5c39e9cab63e
https://doi.org/10.1016/j.mejo.2022.105660
https://doi.org/10.1016/j.mejo.2022.105660
Publikováno v:
Radio Science. 54:1172-1180
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9a66dd5a80a9cde2bb21770618ac978
https://doi.org/10.1029/2019rs006844
https://doi.org/10.1029/2019rs006844
Publikováno v:
Radio Science. 54:904-909
Formation of a two-dimensional electron gas in AlGaN/AlN/GaN heterostructures plays a vital role in high power and high frequency device technology. Such kinds of heterostructures are used for the fabrication of high electron mobility transistors (HE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fa1530a3ebf95a9a7847720f20f86b6
https://doi.org/10.1029/2019rs006855
https://doi.org/10.1029/2019rs006855
Publikováno v:
2020 URSI Regional Conference on Radio Science ( URSI-RCRS).
This paper presents the computational study of the combined metamaterial driven inter-sub band transition phenomenon in GaN HEMT which is possible mode to extend its operating frequency well beyond its present cutoff frequency to THz band. It has bee
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c73490e7a391ac8f9caff2b5119cee51
https://doi.org/10.23919/ursircrs49211.2020.9113510
https://doi.org/10.23919/ursircrs49211.2020.9113510
Autor:
R.K. Kaneriya, Chiranjit Karmakar, Gunjan Rastogi, M.R. Patel, R.B. Upadhyay, Punam Kumar, A.N. Bhattacharya
Publikováno v:
Microelectronic Engineering. 255:111724
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fce212d0f6c7e65fddc48d02693d5ff6
https://doi.org/10.1016/j.mee.2022.111724
https://doi.org/10.1016/j.mee.2022.111724
Autor:
R.K. Kaneriya, R.B. Upadhyay, Gunjan Rastogi, U.S. Joshi, Chiranjit Karmakar, Punam Pradeep Kumar
Publikováno v:
Physics Letters A. 417:127693
We have conducted a comprehensive investigation of the magneto-transport properties of Al0.30Ga0.70N/GaN and Al0.30Ga0.70N/AlN/GaN based HEMT structure in terms of inelastic scattering time via weak localization (WL) measurement. Owing to 1 nm AlN in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c871ad86e1d51a9164c5300c0261316f
https://doi.org/10.1016/j.physleta.2021.127693
https://doi.org/10.1016/j.physleta.2021.127693
Autor:
Ekta Yadav, A N Bhattacharya, Gunjan Rastogi, R.K. Kaneriya, Sanjeev Khare, M. Krishna Chaitanya, R.B. Upadhyay, Punam Pradeep Kumar
Publikováno v:
Microelectronic Engineering. 249:111617
In the present study, new process of N2 pre-treated (NP) Si3N4 passivation on Al0.3Ga0.7N/AlN/GaN HEMTs (High Electron Mobility Transistors)has been developed and its impact on DC and RF performance of HEMTs has been investigated. Additionaly, this s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e88a0ca33110437303ec7ded634fdaba
https://doi.org/10.1016/j.mee.2021.111617
https://doi.org/10.1016/j.mee.2021.111617
Publikováno v:
2019 URSI Asia-Pacific Radio Science Conference (AP-RASC).
In the present work, undoped AlGaN/AlN/GaN heterostructure has been simulated and physics based device model has been developed for GaN high-electron-mobility transistors (HEMT) based Terahertz applications. The heterostructure properties like electr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09910095bad480d52891c3e2e7d223a5
https://doi.org/10.23919/ursiap-rasc.2019.8738691
https://doi.org/10.23919/ursiap-rasc.2019.8738691
Publikováno v:
2019 URSI Asia-Pacific Radio Science Conference (AP-RASC).
Formation of a two-dimensional electron gas (2DEG) in AlGaN/AlN/GaN heterostructures plays a vital role in high power and high frequency device technology. Such kinds of heterostructures are used for the fabrication of High Electron Mobility Transist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70fb16f6e7dff63ad1cc8f03a38324ec
https://doi.org/10.23919/ursiap-rasc.2019.8738496
https://doi.org/10.23919/ursiap-rasc.2019.8738496
Publikováno v:
Microelectronic Engineering. 233:111433
A new and versatile mechanism for electrical tuning of intersubband transitions (ISBT) in GaN High Electron Mobility Transistor (HEMT) device at room temperature is presented. In present study, experimental demonstration is provided which clearly dis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7c6f96e8516b5223392df6a49928b3c
https://doi.org/10.1016/j.mee.2020.111433
https://doi.org/10.1016/j.mee.2020.111433