Zobrazeno 1 - 10
of 118
pro vyhledávání: '"R.K. Hester"'
Publikováno v:
IEEE Journal of Solid-State Circuits. 28:455-461
The design and performance of a 12-b charge redistribution analog-to-digital converter (ADC) is described. The architecture is chosen to minimize power dissipation. Die area is minimized by a modified self-calibration algorithm and nonvolatile memory
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3115808d75c09c35ab3aecfe0a4f9ad9
https://doi.org/10.1109/4.210028
https://doi.org/10.1109/4.210028
Publikováno v:
Digest of Technical Papers. 2005 Symposium on VLSI Circuits, 2005..
An oversampling D/A converter for use in ADSL central office modems has been integrated in 0.18-/spl mu/m CMOS technology. The converter features a resampled, multibit semidigital filter for reconstruction and a digital pre-emphasis filter that flatt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::493d6e20d231b8d92193ad823d6d4ea8
https://doi.org/10.1109/vlsic.2005.1469349
https://doi.org/10.1109/vlsic.2005.1469349
Publikováno v:
[Proceedings] 1992 IEEE International Symposium on Circuits and Systems.
High-speed current-input A/D (analog-to-digital) converters are advocated based on the promise of current-mode techniques for high-speed operation. Current-splitting A/Ds are introduced as possible current-mode flash architectures, and their basic op
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81f85fa7ac88f387e4fd98137190c2ce
https://doi.org/10.1109/iscas.1992.230124
https://doi.org/10.1109/iscas.1992.230124
Publikováno v:
1992 Symposium on VLSI Circuits Digest of Technical Papers.
The design and performance of a 12 b charge redistribution ADC is described. The architecture is chosen to minimize conversion time and power dissipation. Die area is minimized by a modified self-calibration algorithm and nonvolatile memory based on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24d1fd43053a08f12b197d457fb75ac1
https://doi.org/10.1109/vlsic.1992.229272
https://doi.org/10.1109/vlsic.1992.229272
Autor:
R.K. Hester, Satwinder Malhi, H.W. Lam, L.R. Hite, Ashwin H. Shah, Pallab K. Chatterjee, R. Sundaresan
Publikováno v:
IEEE Electron Device Letters. 6:548-550
Using self-aligned and non-self-aligned stacked CMOS technologies experimental 8K × 8-bit static random-access memories (SRAM'S) have been fabricated. Hydrogen passivation has been used to improve the performance of polysilicon devices. An 8K × 8-b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1bad4bf5be7feb5868723e454b97ec6
https://doi.org/10.1109/edl.1985.26225
https://doi.org/10.1109/edl.1985.26225
In rabbit aorta, pretreatment with 2-aminoisoquinoline, 1.3 (2H.4H)-dione (AQ, 10(-5) M and 10(-4) M) shifted the concentration-response relationship to noradrenaline (NA, 10(-9) M to 10(-4) M) in a parallel manner whereas the agent (10(-4) M) failed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b6baf41ccfa1bedfd72f50ba8a99099c
https://europepmc.org/articles/PMC1916548/
https://europepmc.org/articles/PMC1916548/
Publikováno v:
Blood vessels. 13(4)
The role of calcium present in adventitial and media-intimal layers of rabbit aorta in the fast (F-) and the slow (S-) components of norepinephrine (10-5m) contraction was evaluated in this study. An increased sensitivity and decreased maximum tensio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bfbaae6083a8f102f391783aa8859df9
https://pubmed.ncbi.nlm.nih.gov/820388
https://pubmed.ncbi.nlm.nih.gov/820388
Akademický článek
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Autor:
H.W. Lam, C.-E. Chen, R.K. Hester, R. Sundaresan, B.-Y. Mao, Larry R. Hite, T.G.W. Blake, C. Slawinski, Mishel Matloubian
Publikováno v:
IEEE Transactions on Electron Devices. 33:1840-1841
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72cb7042432fc4f2a2fe4bad307c13fe
https://doi.org/10.1109/t-ed.1986.22763
https://doi.org/10.1109/t-ed.1986.22763
Autor:
H.E. Davis, Ashwin H. Shah, Roger A. Haken, Larry R. Hite, Pallab K. Chatterjee, C.D. Gosmeyer, Satwinder Malhi, R. Sundaresan, C.-E. Chen, S.S. Mahant-Shetti, R.V. Karnaugh, H.W. Lam, R.K. Hester, R.F. Pinizzotto
Publikováno v:
IEEE Transactions on Electron Devices. 31:1981-1981
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c664712867eddcffc56f15dea689acd3
https://doi.org/10.1109/t-ed.1984.21876
https://doi.org/10.1109/t-ed.1984.21876