Zobrazeno 1 - 10
of 155
pro vyhledávání: '"R.K. Hayden"'
Autor:
Li, Xinhui1 (AUTHOR) lxh1996@stu2022.jnu.edu.cn, Tong, Huichun1,2 (AUTHOR) tonghuichun@stu2021.jnu.edu.cn, Xu, Shuying1 (AUTHOR) xushuying@stu.jnu.edu.cn, Zhou, Gongke1 (AUTHOR) zgk00@stu2022.jnu.edu.cn, Yang, Tianqi1 (AUTHOR) yangtianqi12138@stu2021.jnu.edu.cn, Yin, Shurui1 (AUTHOR) yinshurui20040416@stu2022.jnu.edu.cn, Yang, Sitong1 (AUTHOR) yangsitong@stu2023.jnu.edu.cn, Li, Xiaojiang1 (AUTHOR) xjli33@jnu.edu.cn, Li, Shihua1 (AUTHOR) lishihualis@jnu.edu.cn
Publikováno v:
International Journal of Molecular Sciences. Nov2024, Vol. 25 Issue 21, p11787. 26p.
Autor:
Beaurain, Marie1 (AUTHOR) beaurain.m@chu-toulouse.fr, Salabert, Anne-Sophie1 (AUTHOR) anne-sophie.salabert@inserm.fr, Payoux, Pierre1 (AUTHOR) pierre.payoux@inserm.fr, Gras, Emmanuel2 (AUTHOR) emmanuel.gras@univ-tlse3.fr, Talmont, Franck3 (AUTHOR) franck.talmont@ipbs.fr
Publikováno v:
Pharmaceuticals (14248247). Oct2024, Vol. 17 Issue 10, p1265. 25p.
Autor:
Christopher R. Tench, T. M. Fromhold, N. Miura, Mohamed Henini, F.W. Sheard, G. Hill, P. B. Wilkinson, R.K. Hayden, P. M. Martin, Laurence Eaves
Publikováno v:
Scopus-Elsevier
We use tunnel current spectroscopy to investigate the quantum states of two GaAs quantum wells coupled by a low (100 meV) (AlGa)As tunnel barrier. A high tilted magnetic field is used to generate strongly chaotic electron motion in the two wells whic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::abdc0a9647d20ac4a79e61f746a26574
https://doi.org/10.1016/s1386-9477(98)00060-5
https://doi.org/10.1016/s1386-9477(98)00060-5
Autor:
Mohamed Henini, R.K. Hayden, Kazuhito Uchida, S.T. Stoddart, Laurence Eaves, P. C. Main, Antonio Polimeni, N. Miura
Publikováno v:
Scopus-Elsevier
Structures are investigated with InAs and In 0.5 Ga 0.5 As self-organised quantum dots embedded in GaAs matrices grown on (1 0 0) and (3 1 1) substrates. The photoluminescence (PL) line widths for In 0.5 Ga 0.5 As quantum dots on the high-index plane
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9c262a13e8d03636e2cea6fbc2ea2535
https://doi.org/10.1016/s0921-4526(98)00111-2
https://doi.org/10.1016/s0921-4526(98)00111-2
Publikováno v:
Journal of the Physical Society of Japan. 66:2228-2231
Four resonances have been observed in the current-voltage characteristics of a GaAs/AlAs single-barrier diode incorporating a δ-layer of silicon donors in the barrier. High magnetic fields applied perpendicular to the plane of the barrier are used t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19349bcd22d0e9c1403da28458396408
https://doi.org/10.1143/jpsj.66.2228
https://doi.org/10.1143/jpsj.66.2228
Autor:
R.K Hayden, R.C. Woods
Publikováno v:
Solid-State Electronics. 41:553-559
Numerical studies are reported of possible epitaxial layer structures for an acoustic charge transfer device in which charge confinement is provided by a single heterojunction. These devices have been modelled to find structures providing adequate ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8baa441aadb592f06caeaf6cd2bb087c
https://doi.org/10.1016/s0038-1101(96)00149-9
https://doi.org/10.1016/s0038-1101(96)00149-9
Publikováno v:
Semiconductor Science and Technology. 11:1424-1428
Hole resonant tunnelling through the quantum well of an AlAs/GaAs/AlAs double-barrier diode grown on a (110) oriented substrate is reported. Fewer resonances are observed in the current - voltage characteristic of the device than in the characteristi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59e3a8a441710a0f93e7bacc350f7991
https://doi.org/10.1088/0268-1242/11/10/012
https://doi.org/10.1088/0268-1242/11/10/012
Autor:
R.C. Woods, R.K. Hayden
Publikováno v:
Materials Science and Engineering: B. 35:80-86
Numerical studies are reported of possible epitaxial layer structures for an acoustic charge transfer device in which charge confinement is provided by a single heterojunction. These devices were modelled to find structures providing adequate charge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29cc4fced031185e62dd738bf8f05a21
https://doi.org/10.1016/0921-5107(95)01406-3
https://doi.org/10.1016/0921-5107(95)01406-3
Publikováno v:
Physical Review B. 49:10745-10748
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fc071ea7291dad5b3892e0954a8d46c4
https://doi.org/10.1103/physrevb.49.10745
https://doi.org/10.1103/physrevb.49.10745
Autor:
Mohamed Henini, E. C. Valadares, Duncan K. Maude, N. Miura, O. Kuhn, Tadashi Takamasu, Laurence Eaves, R.K. Hayden, U Ekenberg, J. C. Portal
Publikováno v:
Semiconductor Science and Technology. 9:298-309
Magnetic fields applied parallel to the layer interfaces are used to study the in-plane energy dispersion and anisotropy of the two-dimensional hole subbands in valence band quantum wells. The quantum wells are formed in p-doped AlAs/GaAs/AlAs double
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9dc1c711974e6dc7380a316c3f6ae52
https://doi.org/10.1088/0268-1242/9/3/010
https://doi.org/10.1088/0268-1242/9/3/010