Zobrazeno 1 - 1
of 1
pro vyhledávání: '"R.J.R. Lander"'
Autor:
Ray Duffy, Gerben Doornbos, H. Roberts, Liesbeth Witters, Annelies Delabie, Andriy Hikavyy, Monja Kaiser, R.J.R. Lander, Sofie Mertens, Serge Biesemans, G. Curatola, R. G. R. Weemaes, Rita Rooyackers, Georgios Vellianitis, Stephan Beckx, Li-Shyue Lai, Malgorzata Jurczak, C. Torregiani, Frederik Leys, C. Jonville, Bartek Pawlak, F.C. Voogt, T. Vandeweyer, D. Donnet, Nadine Collaert, C. Delvaux, M.J.H. van Dal, J. Petty, Marc Demand
Publikováno v:
2007 IEEE International Electron Devices Meeting.
Excellent performance (995 muA/mum at Ioff=94 n A/mum and Vdd=lV) and short channel effect control are achieved for tall, narrow FinFETs without mobility enhancement. Near-ideal fin/gate profiles are achieved with standard 193 nm immersion lithograph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5967a30f3976ce16484408c584f36d01
https://doi.org/10.1109/iedm.2007.4419037
https://doi.org/10.1109/iedm.2007.4419037
