Zobrazeno 1 - 10
of 556
pro vyhledávání: '"R.J. Shul"'
Autor:
S.J. Pearton, R.J. Shul
Publikováno v:
Defects in Optoelectronic Materials ISBN: 9780367811297
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::751faad56138b60f0ea6a8810d84adbe
https://doi.org/10.1201/9780367811297-5
https://doi.org/10.1201/9780367811297-5
Publikováno v:
International Symposium for Testing and Failure Analysis.
Backside circuit edit (CE) remains a crucial failure analysis (FA) capability, enabling design modifications on advanced integrated circuits. [1-9] A key requirement of this activity is to approach the active transistor layer of the silicon through t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee01deaf007dcd0de128060c1b69bd44
https://doi.org/10.31399/asm.cp.istfa2017p0246
https://doi.org/10.31399/asm.cp.istfa2017p0246
Autor:
R.J. Shul, J.C. Zolper
Publikováno v:
MRS Bulletin. 22:36-43
The recent advances in the material quality of the group-III-nitride semiconductors (GaN, A1N, and InN) have led to the demonstration of high-brightness light-emitting diodes, blue laser diodes, and high-frequency transistors, much of which is docume
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e4e023c519f36b416f75ae1e0c66b4d
https://doi.org/10.1557/s0883769400032553
https://doi.org/10.1557/s0883769400032553
Publikováno v:
1998 IEEE/LEOS Summer Topical Meeting. Digest. Broadband Optical Networks and Technologies: An Emerging Reality. Optical MEMS. Smart Pixels. Organic Optics and Optoelectronics (Cat. No.98TH8369).
We describe efforts in integrating MEMS and optoelectronic or photonic functions and the fabrication constraints on both system components. The MEMS technology used in this work are silicon surface-machined systems fabricated using the SUMMiT (Sandia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c19cca0db9de60a4654df19e3d640fd
https://doi.org/10.1109/leosst.1998.689703
https://doi.org/10.1109/leosst.1998.689703
Autor:
M. Eizenberg, C.R. Abernathy, F. Ren, Melanie W. Cole, A. Zeitouny, S. J. Pearton, J.C. Zolper, S. M. Donovan, R.J. Shul
Publikováno v:
1998 Fourth International High Temperature Electronics Conference. HITEC (Cat. No.98EX145).
We have sputter-deposited 500-1200 /spl Aring/ thick WSi/sub 0.45/ metallization onto n/sup +/ GaN (n/spl ges/10/sup 19/ cm/sup -3/) doped either during MOCVD growth or by direct Si/sup +/ ion implantation (5/spl times/10/sup 15/ cm/sup -2/, 100 keV)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1e042a26318392a47f5c2df55e4fe06c
https://doi.org/10.1109/hitec.1998.676807
https://doi.org/10.1109/hitec.1998.676807
This report represents the completion of a three-year Laboratory-Directed Research and Development (LDRD) program that focused on research and development of GaN-based wide bandgap semiconductor materials (referred to as III-N materials). Our theoret
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef59b511d99b9e30c12db46b09b630c4
https://doi.org/10.2172/5901
https://doi.org/10.2172/5901
Autor:
Christi Gober Willison, Thomas E. Zipperian, L. Zhang, R.J. Shul, C.T. Sullivan, S.H. Kravitz
Deep high-aspect ratio Si etching (HARSE) has shown potential application for passive self-alignment of dissimilar materials and devices on Si carriers or waferboards. The Si can be etched to specific depths and; lateral dimensions to accurately plac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a36b3aaa7a0bca22ed1664096f4102a
https://doi.org/10.2172/650284
https://doi.org/10.2172/650284
This report summarizes work on the development of ultra-low power microwave CHFET integrated circuit development. Power consumption of microwave circuits has been reduced by factors of 50--1,000 over commercially available circuits. Positive threshol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d527f0ded696b0f9d185a7d88e2edd18
https://doi.org/10.2172/654155
https://doi.org/10.2172/654155
Autor:
L. Zhang, C.I.H. Ashby, M. M. Bridges, S.J. Pearton, Luke F. Lester, J. Han, C.G. Willison, J.W. Lee, R.J. Shul
GaN etching can be affected by a wide variety of parameters including plasma chemistry and plasma density. Chlorine-based plasmas have been the most widely used plasma chemistries to etch GaN due to the high volatility of the GaCl{sub 3} and NCl etch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9aaccb6c436967f14b2942999b6a9f43
https://doi.org/10.2172/658195
https://doi.org/10.2172/658195