Zobrazeno 1 - 10
of 58
pro vyhledávání: '"R.J. Prado"'
Publikováno v:
Cement and Concrete Research. 123:105774
This paper sets out to acquire information on the atomic structure of the alkali-silica reaction gel by using the x-ray absorption fine structure (XAFS) technique to improve the understanding of the mechanism of expansion. The gel generates mechanica
Autor:
Márcia Carvalho de Abreu Fantini, N E Walsoee de Reca, Diego Germán Lamas, L. M. Acuña, Aldo F. Craievich, I. O. Fábregas, R.J. Prado
Publikováno v:
Powder Diffraction. 23:S46-S55
Crystal and local structures (long- and short-range order, respectively) of four nanocrystalline zirconia-based solid solutions—ZrO2-6 and 16 mol % CaO and ZrO2-2.8 and 12 mol % Y2O3—synthesized by a pH-controlled nitrate-glycine gel-combustion p
Autor:
G.N. Kiesel, S.P. Blalock, E.J. Kuster, R.J. Prado, Glenn S. Smith, L.N. Pringle, J.M. Morris, P.G. Friederich, P.H. Harms
Publikováno v:
IEEE Transactions on Antennas and Propagation. 52:1434-1445
A reconfigurable aperture (RECAP) antenna is described in which a planar array of electrically small, metallic patches are interconnected by switches. The antenna can be reconfigured to meet different performance goals by changing the switches that a
Autor:
R.J. Prado, Pascale Foury-Leylekian, Jean-Marc Fabre, D. Le Bolloc'h, Jean-Paul Pouget, P. Lagarde, Sylvain Ravy
Publikováno v:
Journal de Physique IV (Proceedings). 114:81-85
The charge ordering observed in the (TMTTF) 2 X family has been studied by X-ray absorption spectroscopy. XANES measurements at the Sulfur K-edge show no evidence of charge disproportionation larger than 0.5 e, and EXAFS at the Phosphorus K-edge indi
Publikováno v:
Journal of Non-Crystalline Solids. 330:196-215
We report the effect of annealing on the properties of amorphous hydrogenated silicon carbide thin films. The samples were deposited onto different substrates by plasma enhanced chemical vapor deposition at temperatures between 300 and 350 °C. The g
Publikováno v:
Journal of Applied Crystallography. 34:465-472
Amorphous hydrogenated silicon carbide thin films were deposited by plasma enhanced chemical vapor deposition (PECVD) at temperatures ranging from 573 to 623 K, with different concentrations of silane and methane, exploring two deposition parameters:
Autor:
C.A. Villacorta Cardoso, Manfredo Harri Tabacniks, Márcia Carvalho de Abreu Fantini, A. M. Flank, Inés Pereyra, R.J. Prado
Publikováno v:
Journal of Non-Crystalline Solids. 283:1-10
This paper reports improvements on the chemical and structural order of amorphous hydrogenated silicon carbide thin films, deposited by plasma enhanced chemical vapor deposition (PEVCD) at the `starving plasma regime', from a gaseous mixture of silan
Autor:
A. M. Flank, Márcia Carvalho de Abreu Fantini, Manfredo Harri Tabacniks, R.J. Prado, Inés Pereyra
Publikováno v:
Materials Science Forum. :329-334
Autor:
Márcia Carvalho de Abreu Fantini, Inés Pereyra, C. A. Villacorta, Marcelo Nelson Páez Carreño, R.J. Prado
Publikováno v:
Brazilian Journal of Physics v.30 n.3 2000
Brazilian Journal of Physics
Sociedade Brasileira de Física (SBF)
instacron:SBF
ResearcherID
Brazilian Journal of Physics, Volume: 30, Issue: 3, Pages: 533-540, Published: 2000
Scopus-Elsevier
Brazilian Journal of Physics
Sociedade Brasileira de Física (SBF)
instacron:SBF
ResearcherID
Brazilian Journal of Physics, Volume: 30, Issue: 3, Pages: 533-540, Published: 2000
Scopus-Elsevier
We have shown that close to stoichiometry RF PECVD amorphous silicon carbon alloys deposited under silane starving plasma conditions exhibit a tendency towards c-SiC chemical order. Motivated by this trend, we further explore the effect of increasing
Autor:
Manfredo Harri Tabacniks, R.J. Prado, Inés Pereyra, D. R. S. Bittencourt, Márcia Carvalho de Abreu Fantini, Marcelo Nelson Páez Carreño
Publikováno v:
Journal of Applied Crystallography. 30:659-663
The aim of this paper is to compare the optical, compositional and morphological properties of a-Si1 − x C x : H films deposited by plasma enhanced chemical vapour deposition (PECVD) using different mixtures of silane (SiH4) and methane (CH4) under