Zobrazeno 1 - 10
of 77
pro vyhledávání: '"R.J. Lomax"'
Publikováno v:
IEEE Transactions on Education. 43:353-361
An introductory very large scale integration (VLSI) design course has been taught at the University of Michigan (USA) since 1980. In 1990, it was redesigned around a simple 8-bit microprocessor project in the format described in this paper; in 1996,
Autor:
B. Crawforth, D. Foster, Karem A. Sakallah, Trevor Mudge, Phiroze Parakh, Jonathan K. Abrokwah, S.M. Gold, R.J. Lomax, C.R. Gauthier, T. McQuire, Bruce A. Bernhardt, Richard B. Brown, T.D. Basso, M. LaMacchia, S. Stetson
Publikováno v:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 6:47-51
A self-aligned complementary GaAs (CGaAs) technology (developed at Motorola) for low-power, portable, digital and mixed-mode circuits is being extended to address high-speed VLSI circuit applications. The process supports full complementary, unipolar
Publikováno v:
IEEE Journal of Solid-State Circuits. 26:763-767
Multilevel optimization in the design of an instruction cache for a high-performance GaAs microprocessor is discussed. The performance of the system is maximized by concurrently considering the interrelationships of (1) the time of flight of signals
Autor:
Karem A. Sakallah, R.A. Milano, Trevor Mudge, J.A. Dykstra, Ayman Kayssi, Richard B. Brown, R.J. Lomax, W.P. Birmingham, O.A. Olukotun
Publikováno v:
Computer. 24:56-64
A description is given of work to develop a prototype microcomputer that will realize the best of both the supercomputer and the microprocessor traditions. It does so by using GaAs MESFET enhancement/depletion direct-coupled FET logic, a high-speed t
Autor:
R.H. Voelker, R.J. Lomax
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 38:302-312
A variable-mesh combination of the expanded-node transmission line matrix (TLM) and finite-difference-time-domain (FD-TD) methods for solving time-domain electromagnetic problems is described. It retains the physical process of wave propagation and t
Publikováno v:
Proceedings of 1994 IEEE GaAs IC Symposium.
A bidirectional I/O pad for digital GaAs applications has been designed, fabricated, and tested using Vitesse Semiconductor process technology. The I/O pad is designed to operate at frequencies up to 500 MHz and at GTL, ECL, or Rambus voltage levels.
Autor:
R.J. Lomax, Soo Young Oh
Publikováno v:
1977 11th Asilomar Conference on Circuits, Systems and Computers, 1977. Conference Record..
A two-dimensional formulation of the finite-element method for semiconductor devices is described which is current conservative irrespective of the choice of element functions. An implementation is outlined which includes Gummel's algorithm for poten
Publikováno v:
[Proceedings] 1992 IEEE International Symposium on Circuits and Systems.
Presents a performance model for the University of Michigan MCM (multichip module)-based GaAs microcomputer. The model takes into account architectural as well as MCM packaging considerations such as the chip-to-substrate bonding method, the dielectr
Autor:
Richard Uhlig, R.J. Lomax, Ajay Chandna, Richard B. Brown, Ayman Kayssi, David F. Nagle, Trevor Mudge, P.J. Sherhart, Karem A. Sakallah, Michael Upton, P. Barker, T.R. Huff
Publikováno v:
GaAs IC Symposium Technical Digest 1992.
A simplified version of a RISC (reduced instruction set computer) microprocessor has been implemented with E/D MESFET DCFL (direct coupled FET logic) in the Vitesse HGaAs II process. This chip was designed to drive the development of digital GaAs des
Autor:
T.D. Basso, Richard B. Brown, Trevor Mudge, Phiroze Parakh, R.J. Lomax, C.R. Gauthier, S.M. Gold
Publikováno v:
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996.
A DARPA-funded project at the University of Michigan has as a goal the development of technologies and tools needed to implement microprocessors that can be clocked at GHz speeds. A Complementary GaAs HIGFET technology from the Motorola CS-1 facility