Zobrazeno 1 - 10
of 108
pro vyhledávání: '"R.J. Hwu"'
Publikováno v:
IEEE Transactions on Electron Devices. 48:2205-2209
The growth of thulium phosphide (TmP) by molecular beam epitaxy (MBE) on GaAs substrate is reported. Good epilayer quality was demonstrated through X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy (TEM) anal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::766805d2c57a2fc744f533411e6527e3
https://doi.org/10.1109/16.954455
https://doi.org/10.1109/16.954455
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 6:577-584
We conduct a theoretical analysis of the design, fabrication, and performance measurement of high-power and high-brightness strained quantum-well lasers emitting at 0.98 /spl mu/m. The material system of interest consists of an Al-free InGaAs-InGaAsP
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6faeafee59d3173e4c2bacbb452eb69e
https://doi.org/10.1109/2944.883371
https://doi.org/10.1109/2944.883371
Publikováno v:
IEEE Journal of Quantum Electronics. 35:1535-1541
We report on the material growth and fabrication of high-performance 980-nm strained quantum-well lasers employing a hybrid material system consisting of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers. The use of AlGaAs cladding i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d3f612414f1284f4863a18bfaba2836
https://doi.org/10.1109/3.792590
https://doi.org/10.1109/3.792590
Publikováno v:
IEEE Transactions on Electron Devices. 46:24-31
This paper reports the effects of high temperature on high-frequency/high-speed field effect transistors (FETs), particularly GaAs-based MESFETs and HEMTs. The high-temperature electronic technique (HTET) was employed to stabilize and improve the per
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da6e58a526ff0366105699cf6c762e82
https://doi.org/10.1109/16.737437
https://doi.org/10.1109/16.737437
Autor:
Laurence P. Sadwick, R. T. Lareau, B. R. Kumar, R. Alvis, Mark C. Wood, H. Balasubramaniam, P. P. Lee, R.J. Hwu
Publikováno v:
Journal of Electronic Materials. 27:405-408
There is a significant interest in the area of improving high temperature stable contacts to III-V semiconductors. Two attractive material systems that offer promise in this area are dysprosium phosphide/gallium arsenide (DyP/GaAs) and dysprosium ars
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94a0d172da9347ef7c336943eaf6fe5d
https://doi.org/10.1007/s11664-998-0168-2
https://doi.org/10.1007/s11664-998-0168-2
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 41:890-893
The dependence of the conductance of negative differential resistance (NDR) devices in the presence of an RF signal of varying amplitude has been theoretically analyzed. Variable absolute negative conductance has been observed in both unbiased resona
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::360cf1e81eb821e689be4a725fd1d67e
https://doi.org/10.1109/22.234531
https://doi.org/10.1109/22.234531
Autor:
L. Sadwick, R.J. Hwu
Publikováno v:
2005 Asia-Pacific Microwave Conference Proceedings.
This presentation reviews both past achievements and recent developments of terahertz sources and applications and discusses the limitations to achieving and possible solutions to more powerful and compact sources. Particular emphasis are placed on s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9280e0d66360493b171a1911d9a37a5f
https://doi.org/10.1109/apmc.2005.1607049
https://doi.org/10.1109/apmc.2005.1607049
Publikováno v:
International Electron Devices and Materials Symposium.
We report on GaAs-MESFET based digital logic circuits that operate from room temperature to over 300/spl deg/C. Circuit operation is achieved using a novel technique/technology that results in substantial improvements in device performance and reduct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::131c2aec90abd7269d98112d8115e77b
https://doi.org/10.1109/edms.1994.771267
https://doi.org/10.1109/edms.1994.771267
Autor:
R.J. Hwu
Publikováno v:
Conference Proceedings LEOS Lasers and Electro-Optics Society.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4fe80ab16495b52bb02938789f1fb3f
https://doi.org/10.1109/leos.1988.689761
https://doi.org/10.1109/leos.1988.689761
Publikováno v:
International Electron Devices and Materials Symposium.
Details on the fabrication and testing of microminiature thermionic vacuum tube devices (i.e., diodes, triodes) with ultra-small (i.e., micron-scale) dimensions will be presented. The micro-miniature thermionic vacuum (MTV) devices can either have a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e01392c4942d910f309c6ac006f0cfc
https://doi.org/10.1109/edms.1994.771224
https://doi.org/10.1109/edms.1994.771224