Zobrazeno 1 - 10
of 88
pro vyhledávání: '"R.J. Havens"'
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 54:3378-3386
A computationally efficient physics-based wideband predictive inductor compact model is presented that is capable of evaluating the impact on inductance and quality factor of dummy metal fill-cells. In a modern integrated-circuit process, high amount
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db236dccb45ed6221c6872aa815fc288
https://doi.org/10.1109/tmtt.2006.877831
https://doi.org/10.1109/tmtt.2006.877831
Publikováno v:
IEEE Transactions on Electron Devices. 53:1601-1607
Solid-state varactor performance is evaluated in light of fundamental tradeoffs imposed by semiconductor material. This leads to the important conclusion that the product of Q factor, frequency, tuning range, and breakdown voltage has an upper limit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e8d9c48df40ff6b00b6d05a613bc6eb
https://doi.org/10.1109/ted.2006.875814
https://doi.org/10.1109/ted.2006.875814
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 53:2917-2925
A new noise-figure measurement method, which combines the simplicity of the "classical" Y-factor method with the accuracy of the widely used "cold noise-source" method, is reported. Implemented in our fully automated wide-band 1-18-GHz on-wafer noise
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f162246b438630eec8d50fba40ebc83
https://doi.org/10.1109/tmtt.2005.854243
https://doi.org/10.1109/tmtt.2005.854243
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 53:723-729
The impedance errors remaining after applying the industry standard "open-short," a "pad-open-short," and a "open-short-load" deembedding scheme on a 0.43-nH 20-GHz high-Q single-loop inductor test structure are investigated using real S-parameter da
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40e124d42fc68a6837652776f3288572
https://doi.org/10.1109/tmtt.2004.840621
https://doi.org/10.1109/tmtt.2004.840621
Publikováno v:
Microelectronic Engineering. 72:149-153
This paper presents a new method, developed for the capacitance–voltage (C–V) characterization of leaky dielectrics. The method comprises measurements in the gigahertz range on specially designed RF test structures. The method is verified against
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f06d3143b63623cb6392722e1eb14be8
https://doi.org/10.1016/j.mee.2004.01.028
https://doi.org/10.1016/j.mee.2004.01.028
Autor:
L.F. Tiemeijer, R.J. Havens
Publikováno v:
IEEE Transactions on Electron Devices. 50:822-829
The impedance errors remaining after conventional de-embedding for a high-speed transistor and a single-loop inductor test structure are investigated. A new de-embedding strategy using a physics-based lumped-element model for the test-structure paras
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4125335b97da097e8b44e1271453c26c
https://doi.org/10.1109/ted.2003.811396
https://doi.org/10.1109/ted.2003.811396
Autor:
R.J. Havens, V. C. Venezia, L.F. Tiemeijer, A.J. Scholten, A.T.A. Zegers-van Duijnhoven, R. van Langevelde
Publikováno v:
IEEE Transactions on Electron Devices. 50:618-632
The RF noise in 0.18-/spl mu/m CMOS technology has been measured and modeled. In contrast to some other groups, we find only a moderate enhancement of the drain current noise for short-channel MOSFETs. The gate current noise on the other hand is more
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d5252e92915d6c77a78c85b042cd326
https://doi.org/10.1109/ted.2003.810480
https://doi.org/10.1109/ted.2003.810480
Publikováno v:
IEEE Journal of Solid-State Circuits. 36:1390-1398
The collector epilayer is a crucial element in the behavior of modern bipolar transistors. Compact models for its description, like the Kull model, are therefore of crucial importance too. We give a Mextram-based improvement to these models for quasi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43b92d89b785f8ee735b83202895ee9f
https://doi.org/10.1109/4.944668
https://doi.org/10.1109/4.944668
Publikováno v:
IEEE Electron Device Letters. 25:722-724
The performance of inductors realized in various metal layer combinations available in an advanced CMOS process with a mixed copper-aluminum backend is compared. Due to the skin effect, the gain in performance is generally smaller than anticipated fr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5737be759ee960c954bc88f30abbd97f
https://doi.org/10.1109/led.2004.836797
https://doi.org/10.1109/led.2004.836797
Publikováno v:
IEEE electron device letters, 24(1), 37-39. IEEE
We present a MOS Capacitance-Voltage measurement methodology that, contrary to present methods, is highly robust against gate leakage current densities up to 1000 A/cm/sup 2/. The methodology features specially designed RF test structures and RF meas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::542b367585460cba206fe14cdb7b2c69
https://doi.org/10.1109/led.2002.807016
https://doi.org/10.1109/led.2002.807016