Zobrazeno 1 - 10
of 29
pro vyhledávání: '"R.H. Hendel"'
Publikováno v:
IEEE Electron Device Letters. 4:5-8
Selectively-doped depletion-mode FET's which show full pinch-off at 295 K with transconductance in excess of 90 mS/mm and contact resistance less than 0.4 Ω-mm have been fabricated. The device properties reported represent a significant improvement
Autor:
R.H. Hendel, R. J. Higgins
Publikováno v:
Solid State Communications. 39:47-50
Information deduced from spin-resolved scattering and exchange energy measured via the de Haas - van Alphen effect allows an examination of two recent calculations of the Mn magnetic impurity resonance in Cu. The resulting d-number Nd and spin S are
Publikováno v:
IEEE Transactions on Electron Devices. 31:832-839
We describe a new transistor based on hot-electron transfer between two conducting layers separated by a potential barrier. The mechanism of its operation consists of controlling charge injection over the barrier by modulating the electron temperatur
Autor:
R.H. Hendel, R. Dingle, C.L. Allyn, Mark D. Feuer, James C. M. Hwang, R.A. Kiehl, V.G. Keramidas
Publikováno v:
IEEE Electron Device Letters. 4:377-379
The operation of high-speed divide-by-two circuit (binary counter) composed of selectively doped heterostructure logic gates is reported for the first time. These field-effect transistor circuits utilize the enhanced transport properties of high-mobi
Publikováno v:
1982 International Electron Devices Meeting.
Publikováno v:
1984 International Electron Devices Meeting.
We report gate delay times of less than 10 ps for ring oscillators based on direct coupled FET logic implemented with selectively doped (Al,Ga) As/GaAs heterostructure transistors (SDHTs). The minimum delay time observed was 9.4 ps at 77K with a spee
Autor:
R.H. Hendel, M.D. Feuer, James C. M. Hwang, R.A. Kiehl, R. Dingle, V.G. Keramidas, C.L. Allyn
Publikováno v:
IEEE Transactions on Electron Devices. 30:1587-1588
IIIA-2 gate capacitance and saturated drift velocity in selectively doped heterojunction transistors
Publikováno v:
IEEE Transactions on Electron Devices. 31:1967-1968
Publikováno v:
IEEE Transactions on Electron Devices. 31:1962-1962
Publikováno v:
Electronics Letters. 21:151
Selectively doped AlGaAs/GaAs heterostructure transistor (SDHT) ring oscillators with submicrometre gates have been fabricated using electron beam lithography. Minimum propagation delay of 11.0 ps/gate at 77 K was measured on a 0.4 ?m gate-length rin