Výsledky vyhledávání - "R.G. Bankras"

In Situ Reflective High-Energy Electron Diffraction Analysis During the Initial Stage of a Trimethylaluminum/Water ALD Process

Autor: A. Zinine, J. Holleman, Jacobus Marinus Sturm, Herbert Wormeester, Jurriaan Schmitz, R.G. Bankras, Bene Poelsema

Publikováno v: Chemical vapor deposition, 12(5), 275-280. Wiley-VCH Verlag

the process, especially of the initial stage of the deposition. In this paper the first results obtained from in situ reflective highenergy electron diffraction (RHEED) measurements during the ALD of $Al_2O_3$ on Si(001), using $Al(CH_3)_3$ and $H_2O

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1f2a7fbb155cb915b7de31c24ea170ab
https://doi.org/10.1002/cvde.200506433

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Laterally resolved electrical characterisation of high-K oxides with non-contact Atomic Force Microscopy

Autor: Bene Poelsema, J. Holleman, R.G. Bankras, Jurriaan Schmitz, A. Zinine, Jacobus Marinus Sturm, Herbert Wormeester

Publikováno v: None
Microelectronic engineering, 80, 78-81. Elsevier

Fixed oxide charges in atomic layer deposited (ALD) Al2O3 on hydrogen-terminated Si were observed by ultra-high vacuum (UHV) non-contact AFM with a conductive tip. Comparison of bias-dependent images with a spherical tip model showed the importance o

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::68508f0155e8f3954a76705fa13a2aa3
https://doi.org/10.1016/j.mee.2005.04.015

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C-V Test Structures for Metal Gate CMOS

Autor: M.P.J. Tiggelman, M. Adi Negara, Jurriaan Schmitz, G.T. Sasse, R.G. Bankras

Publikováno v: Proceedings of the International Conference on Microelectronic Test Structures (ICMTS), 226-229
STARTPAGE=226;ENDPAGE=229;TITLE=Proceedings of the International Conference on Microelectronic Test Structures (ICMTS)

Gate leakage has complicated the layout and measurement of C-V test structures. In this paper the impact of metal gate introduction to C-V test structure design is discussed. The metal gate allows for wider-gate structures and for the application of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c93cf52c2f9604e0f13f58b739201d09
https://doi.org/10.1109/icmts.2006.1614309

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Nanoscale topography-capacitance correlation in high-K films: Interface heterogeneity related electrical properties

Autor: R.G. Bankras, Jacobus Marinus Sturm, J. Holleman, Jurriaan Schmitz, Herbert Wormeester, A. Zinine, Bene Poelsema

Publikováno v: Journal of Applied Physics, 98(076104):076104. American Institute of Physics

Kelvin probe force microscopy in ultrahigh vacuum was used to study inhomogeneities of the contact potential difference (CPD) and differential capacitance of thin atomic layer deposited Al2O3 films. CPD fluctuations correlate equally strongly with th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::15799209fcc25b70bd2fdc7ef2ef3ca4
https://research.utwente.nl/en/publications/a89cd02a-2c6b-47eb-896e-b2c1dbf078db

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Imaging of oxide charges and contact potential difference fluctuations in atomic layer deposited Al2O3 on Si

Autor: Jacobus Marinus Sturm, Herbert Wormeester, J. Holleman, R.G. Bankras, A. Zinine, Jurriaan Schmitz, Bene Poelsema

Publikováno v: Journal of Applied Physics, 97(6):063709. American Institute of Physics

Ultrathin 2.5 nm high-k aluminum oxide (Al2O3) films on p-type silicon (001) deposited by atomic layer deposition (ALD) were investigated with noncontact atomic force microscopy (NC-AFM) in ultrahigh vacuum, using a conductive tip. Constant force gra

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5281d5d537e52eb27ca167cdaf7d5612
https://doi.org/10.1063/1.1870113

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