Zobrazeno 1 - 10
of 233
pro vyhledávání: '"R.F.W. Pease"'
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 56:2143-2150
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1baf28037988d0f8f0736131c7dca902
https://doi.org/10.1109/tmtt.2008.2002230
https://doi.org/10.1109/tmtt.2008.2002230
Autor:
T.A Kramer, R.F.W Pease
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 19:13-17
Low frequency noise in MOSFETs is believed to be dominated by the effect of traps near the silicon/silicon dioxide interface. Nanometer-scale transistors should exhibit very low trap populations, even zero in some cases, and this should significantly
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9828bcf9c3b42ba159c4ec2d371ae1d5
https://doi.org/10.1016/s1386-9477(03)00286-8
https://doi.org/10.1016/s1386-9477(03)00286-8
Publikováno v:
IEEE Transactions on Magnetics. 33:990-995
The superparamagnetic limit on grain sizes may soon hinder progress in high density magnetic recording, and patterned media has been proposed as a means of overcoming this limit. Although no clear path exists for implementation of a patterned medium
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2175437f5473b6b04214125d3f145d55
https://doi.org/10.1109/20.560144
https://doi.org/10.1109/20.560144
Publikováno v:
Proceedings of the Thirteenth Biennial University/Government/Industry Microelectronics Symposium (Cat. No.99CH36301).
Numerical implementation of a two-dimensional, physics-based low frequency noise model for MOSFETs is presented. Both the number-induced and mobility-induced current perturbations caused by the interaction of the channel carriers with the oxide state
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04094fdba5aac4308808b66a55581088
https://doi.org/10.1109/ugim.1999.782820
https://doi.org/10.1109/ugim.1999.782820
Publikováno v:
Digests of the Magnetic Recording Conference 'Magnetic Recording Media'..
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85e6e2ab42719cb97900afe9ce7562a6
https://doi.org/10.1109/mrc.1996.658186
https://doi.org/10.1109/mrc.1996.658186
Autor:
J.P. Beale, R.F.W. Pease
Publikováno v:
Electrical Contacts - 1992 Proceedings of the Thirty-Eighth IEEE Holm Conference on Electrical Contacts.
On-chip IC dimensions have been scaled down without a corresponding decrease in the size of off-chip interconnects, including pressure contacts. As the number of I/O lines increases, pressure contacts need to operate at low forces. The use of scannin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fd3e85f05fbf5dae593a5225982a194
https://doi.org/10.1109/holm.1992.246935
https://doi.org/10.1109/holm.1992.246935
Publikováno v:
Soft-X-Ray Projection Lithography.
Using soft X-rays with a wavelength of 13 nm, a diffraction limited projection system with an NA of about 0.09 would have a resolution of about 0.1 μm. The corresponding Rayleigh depth of focus would be about 1.6 μm. Several catoptric reduction des
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1b0a680ed7b60d70d3c3447192c40ad
https://doi.org/10.1364/sxray.1992.tua6
https://doi.org/10.1364/sxray.1992.tua6
Autor:
B.W. Langley, R.F.W. Pease
Publikováno v:
Digest of Technical Papers.1990 Symposium on VLSI Technology.
Results related to the fabrication and measurement of the propagation constant of superconducting microstrip lines operating at microwave frequencies are presented. The phase velocity and penetration depth measurements lead to several conclusions reg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d0ca0fd5a7e3ceaa1427522da89887e
https://doi.org/10.1109/vlsit.1990.111007
https://doi.org/10.1109/vlsit.1990.111007