Zobrazeno 1 - 10
of 40
pro vyhledávání: '"R.F. Schnabel"'
Autor:
D. Tobben, G.Y. Lee, Roy C. Iggulden, Stefan J. Weber, Maria Ronay, Jeff Gambino, Zhijian Lu, R.F. Schnabel, Clevenger Leigh Anne H, Gregory Costrini, R. Ramachandran, X.J. Ning, R. G. Filippi, Chenting Lin, David M. Dobuzinsky
Publikováno v:
Microelectronic Engineering. 50:265-270
This paper presents an overview of issues associated with Al dual damascene process technology. Different integration schemes are discussed and characteristics of metal fill, planarization and reliability are highlighted. Finally, a comparison is mad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c599d31a1bba637d89c644048e369c6
https://doi.org/10.1016/s0167-9317(99)00291-9
https://doi.org/10.1016/s0167-9317(99)00291-9
Autor:
Stefan J. Weber, P Weigand, Roy C. Iggulden, R.F. Schnabel, S. B. Brodsky, Darryl D. Restaino, Lawrence A. Clevenger, E.A Mehter
Publikováno v:
Thin Solid Films. 320:63-66
Today, numerous different PVD techniques are used for the filling of sub micron contacts and vias in ULSI devices. One of the most promising approaches is the Al-reflow process. In this process, voids in vias which form during the PVD deposition of A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5dc9eff04da5a5948b9d2390734d9088
https://doi.org/10.1016/s0040-6090(97)01066-3
https://doi.org/10.1016/s0040-6090(97)01066-3
Publikováno v:
Microelectronic Engineering. :59-65
Interconnects for integrated circuits are generally formed by reactive ion etching (RIE) of the metal stack. However, this process is susceptible to shorts between neighboring lines due to either incomplete etching of the stack or electrically conduc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::940746fdf07c6ca8b20ac70925f0bcec
https://doi.org/10.1016/s0167-9317(97)00094-4
https://doi.org/10.1016/s0167-9317(97)00094-4
Autor:
Alois Krost, Rolf Köhler, R.F. Schnabel, R. Opitz, Martin Schmidbauer, Marius Grundmann, J. Oertel, R. Engelhardt, Dieter Bimberg
Publikováno v:
Journal of Crystal Growth. 156:337-342
Selective area liquid phase epitaxy of InP mesas has been performed on masked Si(001) substrates previously overgrown with InP by metalorganic chemical vapour deposition (MOCVD). The resulting mesas are bordered by very smooth crystal facets which ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9dbde93618c2185a12921f5adafa4036
https://doi.org/10.1016/0022-0248(95)00307-x
https://doi.org/10.1016/0022-0248(95)00307-x
Publikováno v:
Journal of Electronic Materials. 24:1625-1629
Low pressure metalorganic chemical vapor deposition of InP onexactly oriented Si(OOl) substrates with a periodic V-groove pattern of periodicity ≤1.2 μm using a two temperature growth sequence (400 and 640°C) is reported. Planar InP layers with e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29b43f7f0469c503fc5a16623203f511
https://doi.org/10.1007/bf02676822
https://doi.org/10.1007/bf02676822
Publikováno v:
Philosophical Magazine A. 71:1145-1159
GaAs and InP were grown on Si(111) by low-pressure metal-organic chemical vapour deposition and the interfaces were studied by weak-beam and high-resolution transmission electron microscopy. Both cases represent highly mismatched heteroepitaxial syst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::189f1f5cf44690db17fad59b02e6558d
https://doi.org/10.1080/01418619508236242
https://doi.org/10.1080/01418619508236242
Publikováno v:
Journal of Crystal Growth. 145:314-320
Low pressure metalorganic chemical vapour deposition (LP-MOCVD) of GaAs and InP on planar Si(111) and on patterned Si(001) with V-grooves on a sub-μm scale is studied. For both, InP and GaAs grown on planar Si(111), the defect density is reduced by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e398854f5304008d49047171fbfa0ca
https://doi.org/10.1016/0022-0248(94)91069-3
https://doi.org/10.1016/0022-0248(94)91069-3
Autor:
Alois Krost, J. Böhrer, Armin Dadgar, Dieter Bimberg, Herbert Burkhard, S. Hansmann, R.F. Schnabel
Publikováno v:
Applied Physics Letters. 67:3325-3327
Compressively strained InP/GaInAs/AlGaInAs multiquantum well (MQW) laser structures with up to 15 QWs designed for 1.55 μm emission wavelength were grown by metalorganic chemical vapor deposition (MOCVD) on p‐type InP(001) substrates. Crystallogra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ccf542ba386980a885eea5326435bdaf
https://doi.org/10.1063/1.115235
https://doi.org/10.1063/1.115235
Autor:
Stefan J. Weber, M. Hug, F. Zach, R. G. Filippi, K.P. Muller, J. Gambino, R.F. Schnabel, J.F. Nuetzel, Carl J. Radens, R. Iggulden, G. Mueller, Gary B. Bronner, Chenting Lin, David M. Dobuzinsky, Gregory Costrini, Larry Clevenger
Publikováno v:
1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325).
A novel interconnect scheme is presented which has been used to significantly reduce the chip size of an 1 Gb SDRAM chip. The key element is the use of slotted vias for low resistance horizontal interconnects. This allows us to combine low capacitanc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::059d52162b0e450c972bc25a440790a5
https://doi.org/10.1109/vlsit.1999.799331
https://doi.org/10.1109/vlsit.1999.799331
Publikováno v:
Electronics Letters. 30:1348-1350
High-speed long-wavelength metal-semiconductor-metal (MSM) photodetectors were fabricated on the Fe-doped InP/GaAs material system on Si. The detector layers were grown by MOCVD on exactly oriented Si(001) patterned with submicrometre pitch V-grooves
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ad2b4fc37ad1e7ca51328d9545dd6b9
https://doi.org/10.1049/el:19940919
https://doi.org/10.1049/el:19940919