Zobrazeno 1 - 10
of 41
pro vyhledávání: '"R.F. Peart"'
Autor:
J.R. Davis, John A. Kilner, Karen J. Reeson, C. D. Meekison, G.R. Booker, P.L.F. Hemment, Richard J. Chater, R.F. Peart
Publikováno v:
Journal of Applied Physics. 69:3503-3511
Transmission electron microscope studies have been made of (100) silicon wafers implanted at 500 °C with 200‐keV 14N+ ions to doses of either 0.25, 0.75, or 1.4×1018 cm−2. For all of these specimens, the as‐implanted wafers contained a buried
Autor:
R.F. Peart, J.E. Mynard, C. Knowler, M.F. Yao, E. Pasztor, C. J. Richmond, P.L.F. Hemment, K.G. Stephens
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 6:100-105
The 400 keV research implanter at the University of Surrey has been designed, primarily, for the implantation of high doses of ions into samples of various size and geometry. This goal has been achieved by the use of the Freeman type source, a cylind
Publikováno v:
Thin Solid Films. 161:333-342
The modelling of buried SiO 2 layer formation by high dose implantation is extended to simulate new experimental data. The experiments involved the implantation of two different oxygen isotopes ( 16 O and 18 O) followed by subsequent analysis by seco
Autor:
R.J. Chater, P.L.F. Hemment, R.F. Peart, M.F. Yao, John A. Kilner, R.P. Arrowsmith, K.G. Stephens
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 6:292-297
Silicon on insulator structures have been formed by implanting O+ and N+ ions into (100) silicon. The structures have been evaluated by RBS and SIMS techniques. In oxygen implanted substrates, the thickness and crystal quality of the surface layer is
Autor:
R.F. Peart, J.R. Davis, Richard J. Chater, P.L.F. Hemment, R.P. Arrowsmith, Karen J. Reeson, John A. Kilner
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 15:214-217
In order to obtain more information about the formation of buried layers of insulating material, we have undertaken a series of experiments in which we added incremental doses of the stable isotope, 15N, as a tracer, during the ion beam synthesis of
Autor:
M.R. Taylor, E.A. Maydell-Ondrusz, John A. Kilner, R.P. Arrowsmith, P.L.F. Hemment, R.F. Peart, Richard J. Chater
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :293-298
The formation of buried SiO 2 layers by high dose oxygen implantation has been monitored by the implantation of 18O tracer atoms and subsequent analysis by negative ion SIMS. Exchange of 18O with matrix oxygen in the buried layer occurred for all exp
Publikováno v:
Physical Review. 175:788-795
The diffusion coefficients of iron, using ${\mathrm{Fe}}^{59}$ as the radioactive tracer, and the isotope-effect parameter, using ${\mathrm{Fe}}^{55}$ and ${\mathrm{Fe}}^{59}$ as tracers, have been measured in vanadium over a temperature range of mor
Publikováno v:
Acta Metallurgica. 10:519-523
The experiments described in this note were carried out as part of an investigation of diffusion in b.c.c. metals. The data are also of technical interest in view of the importance of refractory metals, including niobium and molybdenum, in current en
Autor:
R.F. Peart
Publikováno v:
Journal of Physics and Chemistry of Solids. 26:1853-1861
Measurements have been made of tracer diffusion coefficients of V48 and Fe59 in single crystals of vanadium over the temperature range 840–1830°C. The V48 results show temperature dependent diffusion characteristics that are represented by activat
Autor:
D.H Tomlin, R.F Peart
Publikováno v:
Acta Metallurgica. 10:123-134
A series of tracer diffusion experiments has been carried out in the b.c.c. phases of titanium and the two titanium based alloys Ti-Fe and Ti-Nb over the concentration range 0–15 at.% Fe or Nb. Together with the earlier work of Mortlock and Tomlin(