Zobrazeno 1 - 10
of 138
pro vyhledávání: '"R.F. Nabiev"'
Autor:
R.F. Nabiev
Publikováno v:
Eurasian Journal of Philology: Science and Education. 179
In the present article the author raises the topic of Eastern protographs, which at one time were sources for ancient Russian historical works. These works contain a certain number of references and direct quotations from “Eastern” stories. Some
Autor:
Mika Toivonen, M. Jansen, Markus Pessa, P. Corvini, V. Vilokkinen, S. Orsila, F Fang, R.F. Nabiev, Pekka Savolainen
Publikováno v:
Journal of Crystal Growth. :877-881
We have studied the growth of 600-nm range strained GaInP/AlGaInP quantum well lasers using solid phosphorous in a valved cracking cell by molecular beam epitaxy. Closely optimized growth conditions for AlGaInP-based materials have been determined. A
Publikováno v:
Semiconductor Science and Technology. 14:425-429
We have prepared high-power 600 nm spectral band quantum well lasers using all-solid-source molecular beam epitaxy for layer growth. An output power up to 3 W in continuous wave mode has been demonstrated at the nominal wavelength of 670 nm, 2 W at 6
Autor:
R.F. Nabiev, M. Jansen, Arnab Bhattacharya, A. Syrbu, J. Lopez, Alexandru Z. Mereutza, Luke J. Mawst, Grigore Suruceanu, V.P. Yakovlev, Dan Botez, M. Nesnidal
Publikováno v:
Journal of Crystal Growth. 170:383-389
Al-free InGaAs/InGaAsP/InGaP laser structures grown by MOVPE have yielded new records in performance. CW front-facet-emitted powers of 5.8 W are achieved from optimized double-quantum-well lasers with 100 μm wide stripes and 1 mm long cavity lengths
Autor:
Takeo Kageyama, Wupen Yuen, R.F. Nabiev, W. Fan, Decai Sun, J. Boucart, Peter Kner, Dongxu Zhang, R. Pathak
Publikováno v:
IEEE Photonics Technology Letters. 16:714-716
In this letter, we present the first demonstration of a long wavelength-tunable vertical-cavity surface-emitting laser (VCSEL) using a monolithically integrated bridge tuning microelectromechanical system structure. The use of such a tuning structure
Autor:
Dan Botez, R.F. Nabiev
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 1:138-149
The effect of gain spatial-hole burning (GSHB), carrier diffusion and interelement loss on antiguided laser arrays is thoroughly analyzed. Nonresonant devices, due to the nonuniformity of the in-phase-mode near-field intensity profile, experience sel
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 1:234-243
Temperature dependent efficiency and modulation characteristics of strained quantum-well (QW) InGaAs-InGaAsP-InGaP 980-nm laser diodes of various designs are analyzed using self consistent carrier transport analysis including stimulated emission. The
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 1:129-137
A novel type of strong-index-guided laser structure for achieving coherent, high-power (/spl sim/1 W) reliable operation is proposed, analyzed, and demonstrated for the first time. The three-core antiresonant-reflective-optical waveguide (ARROW) lase
Autor:
Dongxu Zhang, R. Pathak, Decai Sun, J. Boucart, Peter Kner, R.J. Stone, M. Beaudoin, Wupen Yuen, R.F. Nabiev
Publikováno v:
IEEE Photonics Technology Letters. 15:1186-1188
In this letter, we present the first demonstration of a long wavelength-tunable vertical-cavity surface-emitting laser (VCSEL) using an InP-InAlGaAs distributed Bragg reflector (DBR). The use of such a DBR improves the thermal resistance of the VCSEL
Autor:
R. Pathak, Wupen Yuen, Decai Sun, J. Boucart, Peter Kner, R.J. Stone, R.F. Nabiev, Takeo Kageyama
Publikováno v:
IEEE Photonics Technology Letters. 15:1183-1185
In this letter, we describe the performance of a microelectromechanical system tunable vertical-cavity surface-emitting laser operating at 1550 nm and incorporating a tunnel junction for improved current injection and reduced optical loss. These lase