Zobrazeno 1 - 10
of 139
pro vyhledávání: '"R.F. Kopf"'
Publikováno v:
Solid-State Electronics. 45:1613-1624
The dc and rf performance of AlGaAs/GaAs high electron mobility transistors were measured after exposure to low pressure (5 mTorr) inductively coupled plasmas of H 2 or D 2 for various source (100–400 W) and chuck powers (10–100 W) and durations
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a97164ec5439c594d0c0334773b2e32b
https://doi.org/10.1016/s0038-1101(01)00155-1
https://doi.org/10.1016/s0038-1101(01)00155-1
Autor:
S.-S. Pei, L.E. Smith, Mark D. Feuer, M.T. Asom, T.K. Woodward, Anthony L. Lentine, J.M. Kuo, M.W. Focht, G. J. Przybylek, R.E. Leibenguth, L.M.F. Chirovsky, F. Ren, G. Guth, L.A. D'Asaro, R.F. Kopf, E.J. Laskowski
Publikováno v:
IEEE Photonics Technology Letters. 4:614-617
The authors experimentally demonstrate the operation of a fully integrated optoelectronic circuit with optical input and output consisting of a p-i-n photodetector and load resistor, a depletion-mode GaAs-Al/sub x/Ga/sub 1-x/As heterostructure field-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a67300b108fcd50ddbf3fb1db0840fa
https://doi.org/10.1109/68.141986
https://doi.org/10.1109/68.141986
Autor:
L.C. Luther, R.E. Leibenguth, M.T. Asom, M. Geva, J. M. Kuo, R.F. Kopf, V.D. Mattera, Erdmann Frederick Schubert, V. Swaminathan, G. Livescu
Publikováno v:
Journal of Crystal Growth. 111:246-251
We have compared the extent of spatial confinement and the optical properties of Be and Si delta doped GaAs grown by gas source and solid source MBE. The delta doped samples were grown at a substrate temperature of 500°C. The two-dimensional doping
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1eb995878451f09c2f852645c22b3463
https://doi.org/10.1016/0022-0248(91)90979-f
https://doi.org/10.1016/0022-0248(91)90979-f
Autor:
R.F. Kopf, E.F. Schubert
Publikováno v:
Materials Science Forum. :53-66
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d055c6091c4aaa1ba0bed84b049c625f
https://doi.org/10.4028/www.scientific.net/msf.65-66.53
https://doi.org/10.4028/www.scientific.net/msf.65-66.53
Publikováno v:
IEEE Photonics Technology Letters. 2:477-480
The 3-dB bandwidth of the modulators was measured to greater than 3 GHz, and the time response was measured to 200 ps. By using short mode-locked pulses, the 3-dB bandwidth of the devices used as differential detectors was measured to be greater than
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8142844d321bcac69ca3442f4220b02a
https://doi.org/10.1109/68.56634
https://doi.org/10.1109/68.56634
Autor:
D.J. Werder, Mau-Chung Frank Chang, C.T. Liu, W.J. Sung, Y.K. Chen, R.F. Kopf, J. Chen, E.J. Zhu
Publikováno v:
Proceedings. IEEE Lester Eastman Conference on High Performance Devices.
InP/InGaAs Heterojunction Bipolar Transistors (HBTs) have demonstrated excellent high-frequency performance and are widely used for optical fiber transmission. However, the current mesa HBT structure utilizes a very thick, highly doped n/sup +/InGaAs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b484f4649429bc724289b6e84364baf
https://doi.org/10.1109/lechpd.2002.1146758
https://doi.org/10.1109/lechpd.2002.1146758
10 Gbit/s high sensitivity low error rate decision circuit implemented with C-doped AlGaAs/GaAs HBTs
Autor:
P.R. Smith, J. R. Lothian, T. R. Fullowan, Fan Ren, R.N. Nottenburg, R.K. Montgomery, R.F. Kopf, Stephen J. Pearton, Cammy R. Abernathy, P. W. Wisk
Publikováno v:
Electronics Letters. 27:976-978
A 10 Gbit/s decision circuit has been implemented using AlGaAs/GaAs HBTs with a carbon doped base region. The circuit has an ambiguity level of 27 mV peak to peak with a 240° phase margin at 10 Gbit/s. The error ratio was less than 10−14 for 100 m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::949c189e59e602bfd5d8341e1ed8314c
https://doi.org/10.1049/el:19910609
https://doi.org/10.1049/el:19910609
Autor:
Frederick B. McCormick, J.M. Kuo, L.A. D'Asaro, R.A. Novotny, Gary D. Boyd, Anthony L. Lentine, Leo M. F. Chirovsky, R.F. Kopf
Publikováno v:
IEEE Photonics Technology Letters. 2:51-53
A 64*32 array of symmetric self-electrooptic effect devices, each of which can be operated as a memory element or logic gate, is discussed. The required optical switching energies of the devices were approximately 800 fJ and approximately 2.5 pJ at 6
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7b0861b8494e356380ec4c0460a5bc7
https://doi.org/10.1109/68.47040
https://doi.org/10.1109/68.47040
Autor:
J. Kuo, Alfred Y. Cho, Jenshan Lin, J. Lothian, D.A. Humphrey, Y. K. Chen, J. Weiner, R.A. Hamm, R. Malik, A. Tate, Fan Ren, M. Haner, R. Ryan, R.F. Kopf, D.L. Sivco
Publikováno v:
Ultrafast Electronics and Optoelectronics.
The microwave components and subsystems have made significant progress in the past few years due to the advancement in the III-V compound semiconductor technologies. Commercial applications using microwave and millimeter-wave integrated circuits are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab47413f60c1bc17c98e153e9fafc8b2
https://doi.org/10.1364/ueo.1995.utuc1
https://doi.org/10.1364/ueo.1995.utuc1
Autor:
M. A. Chin, R.F. Kopf, Stephen J. Pearton, T. R. Fullowan, P.R. Smith, J. R. Lothian, Young-Kai Chen, Fan Ren
Publikováno v:
MRS Proceedings. 240
A dry etch fabrication technology for high-speed AlInAs/InGaAs Heterojunction Bipolar Transistors (HBT's) utilizing low-damage Electron Cyclotron Resonance (ECR) CH4/H2/Ar plasma etching is detailed. The dry etch process uses triple self-alignment of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1cc1c45ef3663d953fe6f04f7390f30
https://doi.org/10.1557/proc-240-285
https://doi.org/10.1557/proc-240-285