Zobrazeno 1 - 10
of 54
pro vyhledávání: '"R.F. Dyer"'
Publikováno v:
IEEE Transactions on Electron Devices. 33:1667-1671
The application of localized carrier lifetime control to power devices is explored. A new type of power device, the insulated-gate transistor, was chosen for this study. Proton implantation was used as an agent of lifetime control by varying energy (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4e5bf341ccdd462a906da209411c209
https://doi.org/10.1109/t-ed.1986.22726
https://doi.org/10.1109/t-ed.1986.22726
Publikováno v:
Solid-State Electronics. 30:185-188
Localized lifetime control by proton implantation can result in a considerable improvement in the trade-off between device turn-off time and forward voltage when compared with the unlocalized method of electron irradiation. After a proton dose of 3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95dcaa05228b8732274737fd45f97f3c
https://doi.org/10.1016/0038-1101(87)90147-x
https://doi.org/10.1016/0038-1101(87)90147-x
Publikováno v:
Textile Research Journal. 28:761-765
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ead5400ba49bd19d43f8cf8fab7713a9
https://doi.org/10.1177/004051755802800907
https://doi.org/10.1177/004051755802800907
Publikováno v:
Proceedings of the IEEE. 55:1288-1301
The power thyristor is the most important semicoductor device used in the control of electric power. An explanation of thyristor ratings and rating presentation is required for the complete understanding and successful application of these devices. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8157cfcb600c94dbe34a938249a81a9d
https://doi.org/10.1109/proc.1967.5829
https://doi.org/10.1109/proc.1967.5829
Autor:
R.F. Dyer
Publikováno v:
The Veterinary Journal and Annals of Comparative Pathology. 2:339-344
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce0cf1789fadcd279581829d7d744c78
https://doi.org/10.1016/s2543-3377(17)31254-2
https://doi.org/10.1016/s2543-3377(17)31254-2
Publikováno v:
Textile Research Journal. 22:487-498
The successful warping of coned yarn depends to a major degree on applying equal and con stant tension on each end of yarn so that smooth homogeneous beams are produced. This paper reports a study made to determine the factors which influence warping
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac12b5e1d57e026661657cb1abf1fe4d
https://doi.org/10.1177/004051755202200707
https://doi.org/10.1177/004051755202200707
Publikováno v:
IEEE Electron Device Letters. 6:224-226
Proton implantation has been used to shorten the turnoff time of insulated gate transistors. A narrow region of low carrier lifetime was created at 100-µm depth by implanting 3.1-MeV protons. As with other techniques of lifetime control, an increase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d98bf836e16be66916842acbde64acf6
https://doi.org/10.1109/edl.1985.26105
https://doi.org/10.1109/edl.1985.26105
Autor:
M.F. Chang, G.C. Pifer, Bantval Jayant Baliga, Michael S. Adler, Hamza Yilmaz, T.P. Chow, R.F. Dyer
Publikováno v:
1984 International Electron Devices Meeting.
N-channel insulated gate transistors with 600V forward blocking capability and continuous current rating of 10A and 25A have been reported in 1983. For many applications, such as motor drives, it is highly desirable to use complementary devices. For
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f4452b1137892fc3bdf8ec73b229b51
https://doi.org/10.1109/iedm.1984.190701
https://doi.org/10.1109/iedm.1984.190701
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Akademický článek
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