Zobrazeno 1 - 10
of 184
pro vyhledávání: '"R.E. Leibenguth"'
Autor:
K.F. Dreyer, John W. Stayt, John Michael Geary, R.E. Leibenguth, Liming Zhang, L.J.P. Ketelsen, W.A. Asous, M. Park, C.W. Lentz, Scott L. Broutin, R.L. Hartman, C. W. Ebert, Mark S. Hybertsen, L.J. Peticolas, C.L. Reynolds, J.E. Johnson, T.L. Koch, K.G. Glogovsky, K.K. Kamath, G.J. Przybylek, David Alan Ackerman
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 7:168-177
We report on a fully functional 2.5-Gb/s electroabsorption (EA)-modulated wavelength-selectable laser module meeting all long-haul transmission requirements for stability, chirp, power and linewidth over 20 channels on a 50-GHz grid. Based on a highl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2c5a83f8888bce69cd92b69d2af0601
https://doi.org/10.1109/2944.954126
https://doi.org/10.1109/2944.954126
Autor:
K. Feder, Mark S. Hybertsen, J.M. Vandenberg, B.S. Falk, K. Evans-Lutterodt, Roosevelt People, John Michael Geary, Muhammad A. Alam, M.W. Focht, R.E. Leibenguth, Theo Siegrist, S.K. Sputz, J. Sheridan-Eng, G.J. Przybyiek, F.S. Walters, J.A. Grenko, L. E. Smith, J. Levkoff, K.G. Glogovsky, L.C. Luther, Michael Geva, D.M. Tennant, D. V. Stampone, S. Shunk, N.N. Tzafaras, L.J. Peticolas, L.J.P. Ketelsen, D.M. Romero, S. N. G. Chu, J.E. Johnson, J.L. Zilko, J.L. Lentz, T.L. Pernell, Joseph Michael Freund, E. D. Isaacs, Liming Zhang, W.A. Gault, C.L. Reynolds
Publikováno v:
IEEE Journal of Quantum Electronics. 36:641-648
We describe the design, fabrication, and performance of a five-element quarterwave-shifted distributed feedback laser array with monolithically integrated spot size converters intended for use as a multiple-wavelength source in dense wavelength-divis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::827719dc6e70de0e798f899d38116719
https://doi.org/10.1109/3.845717
https://doi.org/10.1109/3.845717
Autor:
W. Y. Jan, D.B. Buchholz, William E. Mayo, L.M.F. Chirovsky, B.T. Tseng, S.P. Hui, R.A. Novotny, R.L. Morrison, Keith W. Goossen, R.E. Leibenguth, A.L. Lentine, D. Dahringer, Y. C. Wang, D.D. Bacon, John Edward Cunningham, James A. Walker, L.A. D'Asaro, D. Kossives, J.M. Kuo, A. Ron, G. Livescu
Publikováno v:
Journal of Crystal Growth. :971-976
We demonstrate the integration of a large (64 x 68)p-i(MQW)-n GaAs diode array to a silicon CMOS chip, using flip-chip solder bump bonding techniques together with concomitant GaAs substrate removal. The capability of removing a relatively large area
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb93782981ff5047153228efa6b173a6
https://doi.org/10.1016/s0022-0248(96)01206-7
https://doi.org/10.1016/s0022-0248(96)01206-7
Autor:
L.A. D'Asaro, B. Tseng, James A. Walker, Keith W. Goossen, D.D. Bacon, D. Dahringer, R.E. Leibenguth, Anthony L. Lentine, John Cunningham, G. Livescu, D.B. Buchholz, R.L. Morrison, S.P. Hui, W. Y. Jan, R. A. Novotny, J.M. Kuo, L.M.F. Chirovsky, D. Kossives
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 2:77-84
We present the first high-speed optoelectronic very large scale integrated circuit (VLSI) switching chip using III-V optical modulators and detectors flip-chip bonded to silicon CMOS. The circuit, which consists of an array of 16/spl times/1 switchin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d750d14d4d390f20eead31587a71eb94
https://doi.org/10.1109/2944.541876
https://doi.org/10.1109/2944.541876
Autor:
R.E. Leibenguth, H.A. Aispain, B.H. Tyrone, W.J. Parzygnat, M.W. Focht, J.V. Gates, R.J.S. Bates, C.C. Faudskar, S.F. Nati, S.G. Walker, D.J. Muehlner, K.G. Glogovsky, T.J. Ireland, Daniel M. Kuchta, P.J. Anthony, D.H. Lewis, R.A. Morgan, T. Mullally, J.L. Brandner, G. Guth, David K. Lewis, Yiu-Man Wong, D.F. Smith, Young H. Kwark, J.L. Zilko, John D. Crow, M. Fishteyn, Dennis L. Rogers, S. Gowda, D.B. Buchholz
Publikováno v:
Journal of Lightwave Technology. 13:995-1016
A parallel, 32-channel, high density (140 /spl mu/m pitch), 500 Mb/s NRZ, point-to-point, optical data link has been fabricated using existing GaAs IC, silicon optical bench (SiOB), and multichip module (MCM-D) technologies. The main components of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba5fe56ea40d4028253d1c82a6d4b36b
https://doi.org/10.1109/50.390217
https://doi.org/10.1109/50.390217
Autor:
M.W. Focht, R.E. Leibenguth, G. Guth, L.M.F. Chirovsky, M.J. Wojcik, K.G. Glogovsky, J.M. Freund, Anthony L. Lentine, L.A. D'Asaro, M.T. Asom, R.A. Novotny
Publikováno v:
Journal of Lightwave Technology. 13:606-614
A 4/spl times/18 two-dimensional array of GaAs FET-SEED (field effect transistor-self electrooptic effect device) differential transimpedence receivers has been fabricated for application in massively parallel optical data link board-to-board interco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be49b2ff9ce61a8779ad19feaecad7bb
https://doi.org/10.1109/50.372473
https://doi.org/10.1109/50.372473
Autor:
S.P. Hui, L.A. D'Asaro, Gabriela Livescu, Marlin W. Focht, Anthony L. Lentine, R.E. Leibenguth, G. D. Guth, Thomas J. Cloonan, K.G. Glogovsky, Joseph Michael Freund, L.M.F. Chirovsky, R.A. Novotny, T.K. Woodward
Publikováno v:
IEEE Photonics Technology Letters. 6:1126-1129
We describe a 4 by 4 array of embedded control two input, one output optoelectronic switching nodes based on the field effect transistor self electro-optic effect device (FET-SEED) technology. The arrays have electrical fan-out to remove the loss ass
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a0824349467a4980a0797c3fd3f030b
https://doi.org/10.1109/68.324688
https://doi.org/10.1109/68.324688
Autor:
F.F. Judd, G. D. Guth, Moses T. Asom, Robert A. Morgan, Marlin W. Focht, T. Mullally, C. Zimmer, Joseph Michael Freund, K.G. Glogovky, R.E. Leibenguth
Publikováno v:
IEEE Photonics Technology Letters. 6:913-917
We present the design, fabrication, and demonstration of a 10/spl times/10 matrix-addressed vertical-cavity top-surface-emitting laser (VCSEL) array. These arrays are batch-fabricated from full 3-in diameter GaAs/AlGaAs wafers. We show that no perfor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9c60fa78bef73bd7931232b1f2fb38e
https://doi.org/10.1109/68.313050
https://doi.org/10.1109/68.313050
Autor:
Gregory A. Vawter, Kevin L. Lear, R.E. Leibenguth, S.A. Chalmers, A.C. Adams, J. Cheng, J.L. Zilko, Ping Zhou, Yin-Chen Lu, Bo Lu, John C. Zolper
Publikováno v:
IEEE Photonics Technology Letters. 6:222-226
The design, fabrication, and experimental demonstration of dynamically reconfigurable binary optical switches based on the integration of GaAs/AlGaAs vertical-cavity surface-emitting lasers and heterojunction phototransistors are reported. These new
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8ba1f021e242f93bc52d9fd284c071a
https://doi.org/10.1109/68.275433
https://doi.org/10.1109/68.275433
Publikováno v:
IEEE Journal of Quantum Electronics. 30:2500-2506
We discuss the dynamics of transverse mode competition in an etched air-post vertical-cavity laser diode under dc excitation using an annular ring contact as a spatial filter. Distinct regions of operation are found for various ranges of fixed bias c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e9ad7d6c442e56ddd5ef0594c682de7
https://doi.org/10.1109/3.333701
https://doi.org/10.1109/3.333701