Zobrazeno 1 - 10
of 34
pro vyhledávání: '"R.E. Leadon"'
Publikováno v:
IEEE Transactions on Nuclear Science. 53:423-430
P-channel CCDs with pre-rad imaging characteristics comparable to the best N-channel CCDs have been fabricated and tested. These devices have been subjected to proton damage and display the superior hardness predicted for them.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3341d5166b50a72795b79d21c238fc1b
https://doi.org/10.1109/tns.2006.874620
https://doi.org/10.1109/tns.2006.874620
Publikováno v:
IEEE Transactions on Nuclear Science. 50:2219-2224
Results are presented on technique using displacement damage from energetic ions to suppress single event latchup in commercial off-the-shelf (COTS) CMOS integrated circuits. Ions implanted through the back of a thinned chip degrade the parasitic bip
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::532bede1bf89802e1d2e605577482b53
https://doi.org/10.1109/tns.2003.821607
https://doi.org/10.1109/tns.2003.821607
Publikováno v:
IEEE Transactions on Nuclear Science. 48:2136-2139
We identify a discrepancy between experimental data and model predictions by a widely used radiation transport code, SRIM. We describe a method for determining the implant and damage profiles of energetic heavy ions that better agrees with experiment
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::903a78df78d5361b2eedf0cfe8591852
https://doi.org/10.1109/23.983185
https://doi.org/10.1109/23.983185
Publikováno v:
IEEE Transactions on Nuclear Science. 44:2018-2025
This paper discusses research undertaken to evaluate and improve the effectiveness of shielded packages for protecting commercial microelectronics against ionizing dose from electrons and protons in space. The IC shielded package design data base was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::977aef31f4e187cde34144121ba70ed6
https://doi.org/10.1109/23.658984
https://doi.org/10.1109/23.658984
Publikováno v:
1993 IEEE Radiation Effects Data Workshop.
We have completed a Series of CO60 and 8 and 25 MeV proton irradiations of wafer test structures and complete CCD detectors in order to study the changes in threshold voltage, dark current and charge transfer inefficiency (err) of CCD devices with ve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::377779e824864f31cfd2d0966f2f530b
https://doi.org/10.1109/redw.1993.700569
https://doi.org/10.1109/redw.1993.700569
Publikováno v:
1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference.
Analysis of the relationship between the Charge Transfer Efficiency (CTE) and dark current of CCD imagers, and the defects introduced into silicon by displacement damage, led to the prediction that P-channel CCDs would be more radiation hard than con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c4d8056ddb7933349562e73146a4abc
https://doi.org/10.1109/redw.1997.629809
https://doi.org/10.1109/redw.1997.629809
Publikováno v:
Journal of Applied Physics. 44:995-1002
The response of unbiased tantalum capacitors to ionizing radiation has been measured for both small and large dose rates. The results have been analyzed using a two‐trap model for the Ta2O5 dielectric and an equivalent circuit model is presented. A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a9f278c17ff1015ec924daab0ba7643
https://doi.org/10.1063/1.1662385
https://doi.org/10.1063/1.1662385
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