Zobrazeno 1 - 10
of 39
pro vyhledávání: '"R.D. Pugh"'
Publikováno v:
2019 IEEE Aerospace Conference.
A concept is presented to evaluate the potential for diverse collections of state-of-the-art commercial electronics, managed by a radiation-hardened supervisor, to operate reliably in a space radiation environment and to off-load the compute-intensiv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba7deaf952d1a2dcd3124a34789b000d
https://doi.org/10.1109/aero.2019.8741866
https://doi.org/10.1109/aero.2019.8741866
Publikováno v:
IEEE Transactions on Nuclear Science. 48:2081-2085
We report the results of first-principles quantum chemical calculations of the interactions of H/H/sup +/ with oxide ring structures of varying sizes. The calculations suggest that the binding and stability of protons in amorphous SiO/sub 2/ depend u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8317f5b76bdc4706a219f0577d11fd4a
https://doi.org/10.1109/23.983176
https://doi.org/10.1109/23.983176
Publikováno v:
Journal of Non-Crystalline Solids. 289:42-52
We present an ab initio molecular orbital study of H in SiO 2 with special emphasis on H − . We have calculated equilibrium geometries, vibrational spectra, binding energies and electrical levels. For the electrical levels, we have included long-ra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51072d3a9d4ccf15dc0a9f9b209061af
https://doi.org/10.1016/s0022-3093(01)00649-4
https://doi.org/10.1016/s0022-3093(01)00649-4
Publikováno v:
IEEE Transactions on Nuclear Science. 47:2316-2321
First principles quantum mechanical calculations on model SiO/sub 2/ clusters support the Lelis model of reverse annealing in the oxide and provide the first electronic structure explanation of the process, suggesting that delocalized holes (E/sub /s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f5458513b1655af204d295416ea0eef
https://doi.org/10.1109/23.903771
https://doi.org/10.1109/23.903771
Microscopic mechanisms of electron trapping by self-trapped holes and protons in amorphous SiO/sub 2
Publikováno v:
IEEE Transactions on Nuclear Science. 47:2311-2315
The electronic structure mechanisms underlying the electron capture characteristics of oxide-trapped holes (OTHs) and stable protons in amorphous SiO/sub 2/ are presented from first-principles Hartree-Fock calculations on model atomic clusters. The p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4fe12debc59bf5781e511da4fa9c621
https://doi.org/10.1109/23.903770
https://doi.org/10.1109/23.903770
Autor:
W.M. Shedd, Shashi P. Karna, Daniel M. Fleetwood, Karel Vanheusden, H.A. Kurtz, R.D. Pugh, Prakashan P. Korambath
Publikováno v:
IEEE Transactions on Nuclear Science. 46:1562-1567
The buildup of positive charge during annealing in forming gas at 600/spl deg/C was compared for various types of Si/SiO/sub 2/ interfaces. Our data suggest a correlation between the presence of stressed bonds in the SiO/sub 2/ network near the Si/Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d25cc1f81279181e0ac2a133c1b8d3b
https://doi.org/10.1109/23.819121
https://doi.org/10.1109/23.819121
Publikováno v:
IEEE Transactions on Nuclear Science. 46:1544-1552
The atomic structure and spin properties of two previously undescribed amorphous silicon dioxide fundamental point defects have been characterized for the first time by ab initio quantum mechanical calculations. Both defects are electrically neutral
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::04b4cb402f5b1eba946673acf493e885
https://doi.org/10.1109/23.819119
https://doi.org/10.1109/23.819119
Publikováno v:
Journal of Non-Crystalline Solids. 254:66-73
Ab initio Hartree–Fock calculations have been performed on model SiO 2 +H + H 0 clusters to study the interaction between a bridging O atom and hydrogenic species in SiO 2 films. The binding energy of H + at a bridging O site is calculated to be gr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88af51aeffff3da9ddb0211bc328cfab
https://doi.org/10.1016/s0022-3093(99)00375-0
https://doi.org/10.1016/s0022-3093(99)00375-0
Autor:
S.P. Karna, R.D. Pugh, J.R. Chavez, W. Shedd, C.P. Brothers, B.K. Singaraju, M. Vitiello, G. Pacchioni, R.A.B. Devine
Publikováno v:
IEEE Transactions on Nuclear Science. 45:2408-2412
In order to understand the physics of radiation-induced proton density decay in thin SiO/sub 2/ films, we performed ab initio Hartree-Fock calculations of the potential energy curves for the interaction between model oxide clusters and H in two charg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf4daecbf15b573781cbd41a269e60ed
https://doi.org/10.1109/23.736479
https://doi.org/10.1109/23.736479
Autor:
J.R. Chavez, S.P. Karna, K. Vanheusden, C.P. Brothers, R.D. Pugh, B.K. Singaraju, W.L. Warren, R.A.B. Devine
Publikováno v:
IEEE Transactions on Nuclear Science. 44:1799-1803
Radiation induced defect creation or revelation in metal oxide-semiconductor (MOS) field effect transistors (FET) or bipolar structures remains a hazard for devices exposed to hostile environments such as those encountered in space. Certainly for MOS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::138f516071efe4eed76235437149d0d2
https://doi.org/10.1109/23.658945
https://doi.org/10.1109/23.658945