Zobrazeno 1 - 10
of 54
pro vyhledávání: '"R.D. Baertsch"'
Publikováno v:
IEEE Journal of Solid-State Circuits. 30:533-541
A Charge Readout Integrated Circuit (CRIC) which converts detector charges to digital codes is described. The CRIC provides 32 channels of circuitry needed to form charge-to-digital converters having a total dynamic range of 17 b comprised of 4 b of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c622a79ecc3e62439a32035c0710e307
https://doi.org/10.1109/4.384166
https://doi.org/10.1109/4.384166
Publikováno v:
IEEE Journal of Solid-State Circuits. 26:2008-2016
A programmable mixed analog-digital integrated circuit for use in power-metering applications is described. The IC acquires analog input signals from three pairs of voltage and current sensors and provides outputs proportional to RMS voltages and cur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4fe4d94c6b61df93a9fa7d6ba00b07da
https://doi.org/10.1109/4.104195
https://doi.org/10.1109/4.104195
Autor:
Steven L. Garverick, R.D. Baertsch, T. Fujii, Joseph Krisciunas, D.B. Ribner, Donald Thomas Mcgrath
Publikováno v:
IEEE Journal of Solid-State Circuits. 26:1764-1774
A multistage third-order sigma-delta modulator, which is unconditionally stable and has a low sensitivity to component mismatch and op-amp performance limitations, has been designed and fabricated in a 1.2- mu m CMOS double-poly technology. The modul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb4f51e81496bb03cf6b0128d03869c4
https://doi.org/10.1109/4.104167
https://doi.org/10.1109/4.104167
Publikováno v:
1972 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49574a2f86cc50563e291c979fe59366
https://doi.org/10.1109/isscc.1972.1155077
https://doi.org/10.1109/isscc.1972.1155077
Publikováno v:
Proceedings of IEEE International Solid-State Circuits Conference - ISSCC '94.
Multichannel charge-sensitive readout electronics are required in applications including imaging devices and detectors in high-energy physics. Reduced power, increased channel count and digital output are needed. A 128-channel CMOS integrated circuit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60eb82e2d6e0f5b172cc772dca24c3d0
https://doi.org/10.1109/isscc.1994.344685
https://doi.org/10.1109/isscc.1994.344685
Publikováno v:
IEEE Journal of Solid-State Circuits. 12:650-656
A mask-programmable four-quadrant multiplier where an analog multiplication coefficient is stored at each stage of a serial charge-transfer device is described. A serial stream of input data samples d/SUB n/ is multiplied by coefficients c/SUB n/ and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::590a5bb696f578486706d69f98b7c6c9
https://doi.org/10.1109/jssc.1977.1050974
https://doi.org/10.1109/jssc.1977.1050974
Publikováno v:
IEEE Journal of Solid-State Circuits. 8:146-151
A digital shift register using the surface-charge transistor structure in which adjacent rows propagate in opposite directions and which has refresh turn-around circuits at the ends of each row is described. Two process compatible refresh circuits re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2370c8ae54c6f6dd01179e9696bef9c
https://doi.org/10.1109/jssc.1973.1050363
https://doi.org/10.1109/jssc.1973.1050363
Autor:
R.D. Baertsch, A. van der Ziel
Publikováno v:
IEEE Transactions on Electron Devices. :683-687
The power spectrum of the current fluctuations (noise) in the double-base diode has been measured experimentally and calculated theoretically. It has been found that there are two sources of noise in the double-base diode. First, there is the thermal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa9735e8ea460ca6589edec11504cb83
https://doi.org/10.1109/t-ed.1966.15824
https://doi.org/10.1109/t-ed.1966.15824
Publikováno v:
IEEE Journal of Solid-State Circuits. 7:330-335
The authors present a surface-charge storage cell suitable for word-organized dynamic random-access memory and discuss its operation in a memory system. Experimental results and computer simulations of the readout process on a 4/spl times/8 array usi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f090d28b22bc1ed5cfbdc7e055dc75f6
https://doi.org/10.1109/jssc.1972.1052888
https://doi.org/10.1109/jssc.1972.1052888
Publikováno v:
Journal of Applied Physics. 43:2277-2285
A two‐phase 14‐stage transfer shift register has been built and operated which uses the surface‐charge transistor structure to effect the transfer of signal charge from one stage to the next. This paper describes the structure and presents prel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bc5a2397a1f7c499eae9792323d39fb
https://doi.org/10.1063/1.1661492
https://doi.org/10.1063/1.1661492