Zobrazeno 1 - 10
of 29
pro vyhledávání: '"R.C. Taft"'
Autor:
Howard C. Kirsch, R.C. Taft, D.E. Bockelman, D. Denning, N. Camilleri, Craig S. Lage, Jung-Hui Lin, F.B. Shapiro, James D. Hayden
Publikováno v:
IEEE Transactions on Electron Devices. 42:1277-1286
We present the process development and device characterization of the Selectively Compensated Collector (SCC) BJT specifically designed for high-density deep-submicrometer BiCMOS SRAM technologies. This double-poly BJT takes advantage of the self-ali
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::370335be37c8a2010e2defbaef3f52cc
https://doi.org/10.1109/16.391210
https://doi.org/10.1109/16.391210
Autor:
Craig S. Lage, R.C. Taft, Craig D. Gunderson, P. Pelley, Bernard J. Roman, Jung-Hui Lin, K. Kemp, Arkalgud R. Sitaram, P.U. Kenkare, James D. Hayden, Carlos A. Mazure, Bich-Yen Nguyen, Ravi Subrahmanyan, Howard C. Kirsch, M. Woo, S. Radhakrishna
Publikováno v:
IEEE Transactions on Electron Devices. 41:2318-2325
An advanced, high-performance, quadruple well, quadruple polysilicon BiCMOS technology has been developed for fast 16 Mb SRAM's. A split word-line bitcell architecture, using four levels of polysilicon and two self-aligned contacts, achieves a cell a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddcf636456c4fd1389a32d629392f367
https://doi.org/10.1109/16.337444
https://doi.org/10.1109/16.337444
Autor:
R.C. Taft, J.D. Plummer
Publikováno v:
IEEE Transactions on Electron Devices. 39:2108-2118
A theoretical study of the device characteristics of the Ge/sub x/Si/sub 1-x//silicon inversion-base transistor (BICFET) is presented. This transistor uses the space charge of holes in a modulation-doped inversion channel to control vertical electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96d926bf50f7209ff06051f23146bdf6
https://doi.org/10.1109/16.155893
https://doi.org/10.1109/16.155893
Publikováno v:
IEEE Transactions on Electron Devices. 39:2119-2126
The fabrication, material characterization, and electrical evaluation of the p-channel Ge/sub x/Si/sub 1-x//silicon inversion-base transistor (BICFET) are described. The BICFET was one of the first bipolar devices to take advantage of the breakthroug
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44be5e65701a1ccfbe7fc42ced2557dc
https://doi.org/10.1109/16.155894
https://doi.org/10.1109/16.155894
Autor:
R.C. Taft, P.A. Francese, M.R. Tursi, O. Hidri, A. MacKenzie, T. Hoehn, P. Schmitz, H. Werker, A. Glenny
Publikováno v:
2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c00d0d8b57c596098f7e20926ce7921d
https://doi.org/10.1109/isscc.2009.4977316
https://doi.org/10.1109/isscc.2009.4977316
Autor:
R.C. Taft, James D. Plummer
Publikováno v:
IEEE Transactions on Electron Devices. 38:2139-2154
A novel DC method for determining the components of series resistance in bipolar transistors is presented. As a DC technique, it shows unprecedented accuracy as demonstrated by its application to both metal-contacted heterojunction transistors and mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebd199adff0532c8c79bae8eff6d0a27
https://doi.org/10.1109/16.83742
https://doi.org/10.1109/16.83742
Autor:
J.D. Hayden, R.C. Taft
Publikováno v:
IEEE Electron Device Letters. 16:88-90
We present the performance improvements obtained both by scaling the Selectively Compensated Collector (SCC) BJT and by using a modified Current-Mode Logic (CML) gate configuration. Scaling the perimeter parameter by using the (tighter) bitcell desig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b64e334557e85d46fa7570ca870a459
https://doi.org/10.1109/55.363233
https://doi.org/10.1109/55.363233
Autor:
R.C. Taft, J.D. Plummer
Publikováno v:
Technical Digest., International Electron Devices Meeting.
The first operational BICFET (bipolar-inversion-channel field-effect transistor) structures based on the Ge/sub x/Si/sub 1-x//Si system have been demonstrated. The 300 K current gains of beta >300 are believed to be the highest values reported for a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b17fb85455db1914055240b0d57612a2
https://doi.org/10.1109/iedm.1988.32879
https://doi.org/10.1109/iedm.1988.32879
Publikováno v:
Proceedings of 1994 VLSI Technology Symposium.
This paper presented the bipolar RF and circuit characterization of a high-performance 0.35 /spl mu/m BICMOS technology specifically designed for fast SRAMs. A 900 MHz noise figure as low as 0.54 dB at 0.5 mA, prescaler operation up to 3.3 GHz for a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f61a9af84f04e6b752fae3ed6701de73
https://doi.org/10.1109/vlsit.1994.324407
https://doi.org/10.1109/vlsit.1994.324407
Publikováno v:
International Electron Devices Meeting 1991 [Technical Digest].
The authors demonstrate that the optimal 2-D collector doping profile for BiCMOS technologies is a strong function of the intended circuit application of the BJT (bipolar junction transistor). The 2-D collector doping profile in this study was tailor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b3294af3a8dface15b8cddd257bf07f
https://doi.org/10.1109/iedm.1991.235287
https://doi.org/10.1109/iedm.1991.235287