Zobrazeno 1 - 10
of 34
pro vyhledávání: '"R.C. Strijbos"'
Autor:
H.G. Bukkems, M.C. Larson, E.A.J.A. Bente, MK Meint Smit, R.C. Strijbos, B.H. Verbeek, H. de Vrieze, J.J.M. Binsma
Publikováno v:
IEEE Journal of Quantum Electronics, 43(7), 614-621. Institute of Electrical and Electronics Engineers
This paper introduces a novel integrated widely tunable laser, the tunable multimode interference (T-MMI) laser, with as tunable component an MMI coupler with a wavelength adjustable transmission spectrum. Experiments demonstrate up to 150 nm of tuni
Autor:
T.G. van de Roer, Irina Veretennicoff, E. Smalbrugge, W.C. van der Vleuten, Hugo Thienpont, Jan Danckaert, R.C. Strijbos, B. S. Ryvkin, Guy Verschaffelt, F Fouad Karouta, Martinus Petrus Creusen, G.A. Acket
Publikováno v:
IEEE Photonics Technology Letters, 12(8), 945-947. Institute of Electrical and Electronics Engineers
Vrije Universiteit Brussel
Vrije Universiteit Brussel
We present experimental evidence that asymmetric current injection in intracavity contacted vertical-cavity surface-emitting lasers (VCSELs) stabilizes the polarization of the emitted light. Anisotropies in the gain and loss mechanisms introduced by
Publikováno v:
IEEE transactions on ultrasonics, ferroelectrics, and frequency control. 56(12)
The temperature increase of bulk acoustic wave filters at high RF power levels has been investigated. Self-heating due to power dissipation in the filter leads to a nonuniform frequency shift of the insertion loss. At the right filter skirt, self-hea
Publikováno v:
2009 IEEE International Reliability Physics Symposium.
In this paper, the reliability requirements, thermal behaviour and failure mechanisms of solidly mounted Bulk Acoustic Wave (BAW) filters are studied. High power RF stress measurements are presented where the evolution of the surface damage of the BA
Publikováno v:
2007 IEEE Ultrasonics Symposium Proceedings.
High yield bulk acoustic wave (BAW) device manufacturing is a challenge: properties of all films in a complex film stack need to be optimized. The commonly used piezoelectric AIN is one of the central films. Key parameters for this film are best poss
Autor:
R.C. Strijbos, LM Luc Augustin, Hugo Thienpont, Guy Verschaffelt, E. Smalbrugge, Kent D. Choquette, E.J. Geluk, F Fouad Karouta, T.G. van de Roer
Publikováno v:
Vrije Universiteit Brussel
IEEE Photonics Technology Letters, 16(3), 708-710. Institute of Electrical and Electronics Engineers
IEEE Photonics Technology Letters, 16(3), 708-710. Institute of Electrical and Electronics Engineers
We have investigated the potential of asymmetric current injection for polarization switching in GaAs-based intracavity contacted vertical-cavity surface-emitting lasers using two sets of p- and n-type contacts per device. When using the contacts ali
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aed55d84d4bc63d9229e12b80edc6d6d
https://biblio.vub.ac.be/vubir/controlled-polarization-switching-in-vcsels-by-means-of-asymmetric-current-injection(d0b92722-f20f-4462-8d3b-afde06c75d41).html
https://biblio.vub.ac.be/vubir/controlled-polarization-switching-in-vcsels-by-means-of-asymmetric-current-injection(d0b92722-f20f-4462-8d3b-afde06c75d41).html
Electrically controlled gain modulation for active mode locking of far-infrared p-Ge hot hole lasers
Autor:
Raymond N. Schouten, R.C. Strijbos, J. N. Hovenier, Andrei V. Muravjov, W. T. Wenckebach, J. G. S. Lok, S.G. Pavlov, V.N. Shastin, J. H. Blok
Publikováno v:
Conference Digest. 15th IEEE International Semiconductor Laser Conference.
The feasibility of achieving active mode locking in p-Ge hot-hole far-infrared lasers by gain modulation is investigated. The gain is modulated locally by applying an additional radio frequency electric field along the magnetic field direction.
Autor:
Martin Creusen, B. S. Ryvkin, Manuela Buda, Willem van der Vleuten, F Fouad Karouta, Guy Verschaffelt, Hugo Thienpont, Jan Danckaert, Theo G. van de Roer, R.C. Strijbos, Irina Veretennicoff
Publikováno v:
SPIE Proceedings.
Top-emitting intra-cavity VCSELs have been fabricated by reactive-ion etching of a double mesa and applying p and n contact metallizations at the bottom of both mesas, respectively, where highly doped layers are inserted into the cavity on either sid
Autor:
L.M. Augustin, E. Smalbrugge, K.D. Choquette, F. Karouta, R.C. Strijbos, G. Verschaffelt, E.-J. Geluk, T.G. van de Roer, H. Thienpont
Publikováno v:
IEEE Photonics Technology Letters; Mar2004, Vol. 16 Issue 3, p708-710, 3p
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